WO2025092659A1 - 一种光伏组件 - Google Patents

一种光伏组件 Download PDF

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Publication number
WO2025092659A1
WO2025092659A1 PCT/CN2024/127785 CN2024127785W WO2025092659A1 WO 2025092659 A1 WO2025092659 A1 WO 2025092659A1 CN 2024127785 W CN2024127785 W CN 2024127785W WO 2025092659 A1 WO2025092659 A1 WO 2025092659A1
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WO
WIPO (PCT)
Prior art keywords
equal
reflection layer
layer
photovoltaic module
less
Prior art date
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Pending
Application number
PCT/CN2024/127785
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English (en)
French (fr)
Inventor
何志富
施海旋
丁佳伟
王静
周仁刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Longi Green Energy Technology Co Ltd
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Longi Green Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from CN202420923017.3U external-priority patent/CN222339913U/zh
Application filed by Longi Green Energy Technology Co Ltd filed Critical Longi Green Energy Technology Co Ltd
Priority to EP24884662.8A priority Critical patent/EP4618726A4/en
Publication of WO2025092659A1 publication Critical patent/WO2025092659A1/zh
Anticipated expiration legal-status Critical
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/20—Optical components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/80—Encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells

Definitions

  • the present application relates to the field of photovoltaic technology, and in particular to a photovoltaic module.
  • Photovoltaic modules usually include laminates, junction boxes and frames.
  • the laminates usually include a cover plate, a battery layer and a back plate stacked in sequence from top to bottom.
  • the side of the cell layer facing the cover plate usually has a passivation layer. Due to the presence of the passivation layer, the cell generally appears blue or dark blue. At this time, the photovoltaic module made using the above cell has a large visual difference and low aesthetics.
  • the purpose of the present application is to provide a photovoltaic module, which is used to make the photovoltaic module present a more uniform color visually, so as to reduce the visual difference of the photovoltaic module and improve the aesthetics of the photovoltaic module.
  • the present application provides a photovoltaic module.
  • the photovoltaic module includes a cover plate, a battery cell and a packaging plate stacked in sequence from top to bottom.
  • the surface of the battery cell On the side facing the cover plate, the surface of the battery cell has a passivation layer.
  • the refractive index of the passivation layer is greater than or equal to 1.9 and less than or equal to 2.3.
  • the thickness of the passivation layer is greater than or equal to 50nm and less than or equal to 100nm.
  • An anti-reflection layer is provided on the cover plate, and the anti-reflection layer is located on the side of the cover plate away from the battery cell.
  • the thickness of the anti-reflection layer is greater than or equal to 100nm and less than or equal to 230nm.
  • the refractive index of the anti-reflection layer is greater than or equal to 1.1 and less than or equal to 1.4.
  • the photovoltaic module when the photovoltaic module is made by using the passivation layer and the anti-reflection layer that meet the above-mentioned requirements, the photovoltaic module visually presents a relatively uniform dark blue or black color under the combined effect of the passivation layer and the anti-reflection layer, which reduces the visual difference compared with the photovoltaic module in the prior art and improves the aesthetics of the photovoltaic module.
  • the passivation layer The thickness and refractive index of the anti-reflection layer are all within a certain range of values, not a single absolute value. Therefore, the values of the above four limiting conditions can be selected according to actual conditions.
  • the photovoltaic module can be adapted to different application scenarios to expand its scope of application and facilitate promotion.
  • the use of the anti-reflection layer of the above thickness can improve the weather resistance of the cover plate.
  • the refractive index of the passivation layer is greater than or equal to 2.0 and less than or equal to 2.2; the refractive index of the anti-reflection layer is greater than or equal to 1.2 and less than or equal to 1.3.
  • the anti-reflection layer is a stacked structure including at least two layers.
  • the anti-reflection layer includes a first anti-reflection layer and a second anti-reflection layer stacked in sequence, and the second anti-reflection layer is located between the cover plate and the first anti-reflection layer.
  • the second anti-reflection layer can not only reduce the flatness of the cover plate surface and reduce the inconsistency of light reflection direction, but also reduce the color difference of the cover plate. Furthermore, the first anti-reflection layer can make the color difference of the cover plate tend to zero by using its refractive index, so as to reduce or eliminate the color difference after the cover plate and the cell are combined, and at the same time improve the aesthetics of the photovoltaic module.
  • the thickness of the first anti-reflection layer is greater than the thickness of the second anti-reflection layer.
  • the thickness of the first anti-reflection layer is greater than or equal to 80 nm and less than or equal to 150 nm; the thickness of the second anti-reflection layer is greater than or equal to 50 nm and less than or equal to 100 nm.
  • the refractive index of the first anti-reflection layer is smaller than the refractive index of the second anti-reflection layer.
  • the weather resistance of the cover plate can be guaranteed, and the optimized value of the coating matching can be obtained.
  • the superposition thickness of the first anti-reflection layer and the second anti-reflection layer is relatively thick, which can further improve the weather resistance of the cover plate.
  • the interference destructiveness of the first anti-reflection layer and the second anti-reflection layer can improve the transmittance and achieve broadband anti-reflection.
  • the refractive index of the first anti-reflection layer is greater than or equal to 1.1 and less than or equal to 1.3; the refractive index of the second anti-reflection layer is greater than or equal to 1.3 and less than or equal to 1.5.
  • the refractive index of the first anti-reflection layer is greater than or equal to 1.2 and less than or equal to 1.3; the refractive index of the second anti-reflection layer is greater than or equal to 1.4 and less than or equal to 1.5.
  • the porosity of the first anti-reflection layer is greater than that of the second anti-reflection layer.
  • the refractive index of the first anti-reflection layer can be ensured to be less than that of the second anti-reflection layer, so as to ensure the weather resistance of the cover plate and obtain the optimal value of the coating matching.
  • the porosity of the first anti-reflection layer is greater than or equal to 35% and less than or equal to 60%. In this case, the optical performance of the first anti-reflection layer can be ensured.
  • the porosity of the second anti-reflection layer is greater than or equal to 10% and less than or equal to 10%. At this time, the weather resistance of the cover plate can be further improved.
  • the light transmittance of the laminate formed by the cover plate and the anti-reflection layer is greater than or equal to 90%, which is more conducive to the light irradiation on the cell, thereby improving the utilization rate of visible light by the cell and improving the photoelectric conversion efficiency of the photovoltaic module.
  • the passivation layer includes a first passivation layer and a second passivation layer that are stacked, and the first passivation layer is located between the cover plate and the second passivation layer.
  • one of the first passivation layer and the second passivation layer is an aluminum oxide passivation layer, and the other is a silicon nitride passivation layer.
  • the thickness of the aluminum oxide passivation layer is greater than or equal to 5 nm and less than or equal to 10 nm; the refractive index of the aluminum oxide passivation layer is greater than or equal to 1.5 and less than or equal to 1.8.
  • the thickness of the silicon nitride passivation layer is greater than or equal to 50 nm and less than or equal to 80 nm; the refractive index of the silicon nitride passivation layer is greater than or equal to 1.8 and less than or equal to 2.2.
  • the first passivation layer is an aluminum oxide passivation layer
  • the second passivation layer is a silicon nitride passivation layer.
  • the anti-reflection layer includes at least one of a silicon nitride anti-reflection layer, a silicon oxide anti-reflection layer, and a titanium oxide anti-reflection layer.
  • the cell is a back-contact cell.
  • the photovoltaic module further includes: a first adhesive film layer and a second adhesive film layer.
  • the first adhesive film layer is located between the cover plate and the battery cell
  • the second adhesive film layer is located between the battery cell and the packaging plate. The first adhesive film layer and the second adhesive film layer are used to wrap the battery cell.
  • the package board is a black organic package board or a black glazed package board
  • the photovoltaic module is a full black photovoltaic module
  • the front appearance of the photovoltaic module can be made completely black.
  • the photovoltaic module presents a uniform color visually, which reduces the visual difference of the photovoltaic module and improves the aesthetics of the photovoltaic module.
  • the completely black photovoltaic module improves the utilization rate of visible light, thereby improving the photoelectric conversion efficiency of the photovoltaic module.
  • FIG1 is a schematic diagram of the structure of a photovoltaic module in an embodiment of the present application.
  • FIG2 is a schematic diagram of the positional relationship between the battery cell and the passivation layer in an embodiment of the present application
  • FIG3 is a schematic diagram of the positional relationship between the cover plate and the anti-reflection layer in an embodiment of the present application
  • FIG4 is a schematic diagram of the relationship between incident light, a cover plate, and an anti-reflection layer in an embodiment of the present application;
  • FIG. 5 is a schematic diagram of the structure of a battery cell in an embodiment of the present application.
  • first and second are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as “first” or “second” may explicitly or implicitly include one or more of the features.
  • “multiple” means two or more, unless otherwise clearly and specifically defined.
  • "Several” means one or more, unless otherwise clearly and specifically defined.
  • the present application embodiment provides a photovoltaic module.
  • the photovoltaic module includes a cover plate 1, a battery cell 2 and an encapsulation plate 3 stacked in sequence from top to bottom.
  • the surface of the battery cell 2 has a passivation layer 20.
  • the refractive index of the passivation layer 20 is greater than or equal to 1.9 and less than or equal to 2.3.
  • the refractive index of the passivation layer 20 can be 1.9, 1.93, 1.95, 1.98, 2.0, 2.05, 2.08, 2.1, 2.13, 2.16, 2.19, 2.2, 2.23, 2.25, 2.28 or 2.3, etc.
  • the refractive index of the passivation layer 20 is greater than or equal to 2.0 and less than or equal to 2.2.
  • the refractive index of the passivation layer 20 can be 2.0, 2.05, 2.08, 2.1, 2.13, 2.16, 2.19 or 2.2, etc.
  • the thickness D1 of the passivation layer 20 is greater than or equal to 50 nm and less than or equal to 100 nm.
  • the thickness D1 of the passivation layer 20 may be 50 nm, 60 nm, 70 nm, 80 nm, 92 nm or 100 nm, etc.
  • An anti-reflection layer 4 is provided on the cover plate 1, and the anti-reflection layer 4 is located on the side of the cover plate 1 away from the battery cell 2.
  • the thickness D2 of the anti-reflection layer 4 is greater than or equal to 100 nm and less than or equal to 230 nm.
  • the thickness D2 of the anti-reflection layer 4 may be 100 nm, 120 nm, 150 nm, 180 nm, 195 nm, 200 nm or 230 nm, etc.
  • the refractive index of the anti-reflection layer 4 is greater than or equal to 1.1 and less than or equal to 1.4.
  • the refractive index of the anti-reflection layer 4 may be 1.1, 1.12, 1.15, 1.18, 1.2, 1.21, 1.23, 1.25, 1.28, 1.3, 1.32, 1.36, 1.38 or 1.4, etc.
  • the refractive index of the anti-reflection layer 4 is greater than or equal to 1.2 and less than or equal to 1.3.
  • the refractive index of the anti-reflection layer 4 may be 1.2, 1.21, 1.23, 1.25, 1.28 or 1.3, etc. It should be understood that the thickness direction of the passivation layer 20 and the thickness direction of the anti-reflection layer 4 are consistent with the direction from the cover plate 1 to the packaging plate 3.
  • the photovoltaic module preferably a back contact photovoltaic module
  • the photovoltaic module when the photovoltaic module is made by using the passivation layer 20 and the anti-reflection layer 4 that meet the above-mentioned limitations, under the combined effect of the passivation layer 20 and the anti-reflection layer 4, the photovoltaic module visually presents a relatively uniform dark blue or black color, which reduces the visual difference compared to the photovoltaic module in the prior art and improves the aesthetics of the photovoltaic module.
  • the thickness and refractive index of the passivation layer 20, as well as the thickness and refractive index of the anti-reflection layer 4 are within a certain range of values, they are not a single absolute value. Therefore, the values of the above four limiting conditions can be selected according to actual conditions. At this time, the photovoltaic module can be adapted to different application scenarios to expand its scope of application and facilitate promotion.
  • the thickness of the anti-reflection layer when the thickness of the passivation layer is 80nm and the refractive index is 2.0, the thickness of the anti-reflection layer needs to be greater than or equal to 120nm and less than or equal to 180nm, and the refractive index is greater than or equal to 1.22 and less than or equal to 1.25, and the appearance of the component presents a uniform blue-black color.
  • the thickness of the passivation layer is 100nm and the refractive index is 2.1
  • the thickness of the anti-reflection layer needs to be set to be greater than or equal to 150nm and less than or equal to 200nm, and the refractive index is greater than or equal to 1.23 and less than or equal to 1.28, and the appearance of the component presents a uniform blue-black color.
  • the anti-reflection layer 4 with the above thickness can improve the weather resistance of the cover plate 1.
  • the side facing the cover plate 1 has a passivation layer 20 on the surface of the battery cell 2.
  • the optical surface is provided with a passivation layer 20, in which case the passivation layer can passivate the front electric field, for example, can include field passivation and interface passivation, so as to protect the front electric field.
  • the passivation layer 20 includes a stacked structure of at least two passivation layers, but for cost and manufacturing process considerations, the passivation layer 20 preferably includes a first passivation layer 200 and a second passivation layer 201 that are stacked, and the first passivation layer 200 is located between the cover plate 1 and the second passivation layer 201.
  • Using two film layers to control the color of the battery cell 2 is more convenient, easier to implement, and reduces difficulty than using one film layer to control.
  • one of the first passivation layer and the second passivation layer is an aluminum oxide passivation layer, and the other is a silicon nitride passivation layer.
  • the thickness of the aluminum oxide passivation layer is greater than or equal to 5nm, and less than or equal to 10nm.
  • the thickness of the aluminum oxide passivation layer can be 5nm, 6nm, 7nm, 8nm, 9nm or 10nm.
  • the refractive index of the aluminum oxide passivation layer is greater than or equal to 1.5, and less than or equal to 1.8.
  • the refractive index of the aluminum oxide passivation layer can be 1.5, 1.55, 1.6, 1.65, 1.7, 1.75 or 1.8.
  • the thickness of the silicon nitride passivation layer is greater than or equal to 50nm, and less than or equal to 80nm.
  • the thickness of the silicon nitride passivation layer can be 50nm, 52nm, 60nm, 66nm, 70nm or 80nm.
  • the refractive index of the silicon nitride passivation layer is greater than or equal to 1.8, and less than or equal to 2.2.
  • the refractive index of the silicon nitride passivation layer may be 1.8, 1.85, 1.9, 1.95, 2.0, 2.05, 2.1, 2.15 or 2.2, etc.
  • the first passivation layer is an aluminum oxide passivation layer
  • the second passivation layer is a silicon nitride passivation layer.
  • the first passivation layer 200 preferably includes a two-layer structure, for example, an oxygen-poor silicon nitride layer 2002 (the ratio of the number of atoms of silicon and nitrogen in the silicon nitride layer 2002 is not specific, and a very small amount of oxygen may be contained) and an oxygen-rich silicon oxynitride layer 2001 (the ratio of the number of atoms of silicon, oxygen and nitrogen is not specific); the thickness of the silicon nitride layer 2002 is 30nm-60nm, for example, the thickness of the silicon nitride layer 2002 may be 30nm, 35nm, 40nm, 45nm, 55nm, 60nm, etc.
  • an oxygen-poor silicon nitride layer 2002 the ratio of the number of atoms of silicon and nitrogen in the silicon nitride layer 2002 is not specific, and a very small amount of oxygen may be contained
  • an oxygen-rich silicon oxynitride layer 2001 the ratio of the number of atoms of silicon, oxygen and nitrogen is
  • the refractive index of the silicon nitride layer 2002 is 1.9-2.3, for example, the refractive index of the silicon nitride layer 2002 may be 1.9, 1.95, 2.0, 2.05, 2.1, 2.15, 2.2, 2.25 or 2.3, etc.
  • the thickness of the silicon oxide nitride layer 2001 is 20 nm-50 nm, for example, the thickness of the silicon oxide nitride layer 2001 can be 20 nm, 25 nm, 30 nm, 35 nm, 40 nm, 45 nm, 50 nm, etc.
  • the refractive index of the silicon oxide nitride layer 2001 is 1.5-1.9, for example, the refractive index of the silicon oxide nitride layer 2001 can be 1.5, 1.55, 1.6, 1.65, 1.7, 1.75, 1.8, 1.85 or 1.9, etc.
  • the silicon nitride layer 2002 can be formed by one-step deposition or by multiple-step deposition (ie, several layers are deposited and stacked to form the silicon nitride layer 2002 ), and the same is true for the silicon oxide nitride layer 2001 .
  • the anti-reflection layer may be a single layer or at least two layers. Two possible cases are described below as examples. It should be understood that the following description is only for understanding and is not intended to be a specific limitation.
  • the anti-reflection layer is a single layer, the thickness of the anti-reflection layer is greater than or equal to 105 nm and less than or equal to 135 nm, and the refractive index of the anti-reflection layer is greater than or equal to 1.1 and less than or equal to 1.4.
  • the anti-reflection layer is a laminated structure including at least two layers.
  • the anti-reflection layer 4 preferably includes a first anti-reflection layer 40 and a second anti-reflection layer 41 laminated in sequence, and the second anti-reflection layer 41 is located between the cover plate 1 and the first anti-reflection layer 40 .
  • the second anti-reflection layer 41 can not only reduce the flatness of the surface of the cover plate 1, but also reduce the inconsistency of the light reflection direction. At the same time, the color difference of the cover plate 1 can also be reduced. Furthermore, the first anti-reflection layer 40 can make the color difference of the cover plate 1 tend to zero by using its refractive index, so as to reduce or eliminate the color difference after the cover plate 1 is combined with the battery cell 2, and at the same time, the aesthetics of the photovoltaic module can be improved.
  • the thickness of the first anti-reflection layer is greater than the thickness of the second anti-reflection layer.
  • the thickness of the first anti-reflection layer 40 is greater than or equal to 80 nm and less than or equal to 150 nm.
  • the thickness of the first anti-reflection layer 40 may be 80 nm, 85 nm, 90 nm, 95 nm, 100 nm, 110 nm, 115 nm, 120 nm, 125 nm, 130 nm, 135 nm, 140 nm or 150 nm.
  • the thickness of the first anti-reflection layer 40 is greater than or equal to 100 nm and less than or equal to 130 nm.
  • the thickness of the first anti-reflection layer 40 may be 100 nm, 110 nm, 115 nm, 120 nm, 125 nm or 130 nm.
  • the thickness of the second anti-reflection layer 41 is greater than or equal to 50 nm and less than or equal to 100 nm.
  • the thickness of the second anti-reflection layer 41 can be 50 nm, 55 nm, 60 nm, 70 nm, 72 nm, 76 nm, 80 nm, 85 nm, 90 nm, 95 nm or 100 nm.
  • the thickness of the second anti-reflection layer 41 is greater than or equal to 70 nm and less than or equal to 90 nm.
  • the thickness of the second anti-reflection layer 41 can be 70 nm, 72 nm, 76 nm, 80 nm, 85 nm or 90 nm.
  • the refractive index of the first anti-reflection layer is smaller than the refractive index of the second anti-reflection layer.
  • the weather resistance of the cover plate 1 can be guaranteed, and the optimized value of the coating matching can be obtained.
  • the superposition thickness of the first anti-reflection layer 40 and the second anti-reflection layer 41 is relatively thick, which can further improve the weather resistance of the cover plate 1.
  • the interference destructiveness of the first anti-reflection layer 40 and the second anti-reflection layer 41 can improve the transmittance and achieve broadband anti-reflection.
  • the refractive index of the first anti-reflection layer 40 is greater than or equal to 1.1 and less than or equal to Equal to 1.3.
  • the refractive index of the first anti-reflection layer 40 may be 1.1, 1.15, 1.18, 1.2, 1.21, 1.23, 1.25, 1.28 or 1.3, etc.
  • the refractive index of the first anti-reflection layer 40 is greater than or equal to 1.2, and less than or equal to 1.3.
  • the refractive index of the first anti-reflection layer 40 may be 1.2, 1.21, 1.23, 1.25, 1.28 or 1.3, etc.
  • the refractive index of the second anti-reflection layer 41 is greater than or equal to 1.3, and less than or equal to 1.5.
  • the refractive index of the second anti-reflection layer 41 may be 1.3, 1.33, 1.36, 1.39, 1.4, 1.42, 1.45, 1.46, 1.48, 1.49 or 1.5, etc.
  • the refractive index of the second anti-reflection layer 41 is greater than or equal to 1.4, and less than or equal to 1.5.
  • the refractive index of the second anti-reflection layer 41 may be 1.4, 1.42, 1.45, 1.46, 1.48, 1.49 or 1.5.
  • np2 ( n2-1 )(1-p) + 1
  • np represents the refractive index of the porous film
  • n represents the refractive index of SiO2
  • n 1.553
  • p represents the volume percentage of the pores in the film.
  • the porosity of the first anti-reflection layer 40 is greater than the porosity of the second anti-reflection layer 41.
  • the refractive index of the first anti-reflection layer 40 can be ensured to be less than the refractive index of the second anti-reflection layer 41, so as to ensure the weather resistance of the cover plate 1 and obtain the optimized value of the coating matching.
  • the porosity of the first anti-reflection layer 40 is greater than or equal to 35% and less than or equal to 60%.
  • the porosity of the first anti-reflection layer 40 can be 35%, 36%, 40%, 45%, 49%, 50%, 55% or 60%.
  • the optical performance of the first anti-reflection layer 40 can be ensured.
  • the porosity of the first anti-reflection layer 40 is 49%.
  • the porosity of the second anti-reflection layer 41 is greater than or equal to 10% and less than or equal to 30%.
  • the porosity of the second anti-reflection layer 41 can be 10%, 12%, 16%, 19%, 20%, 25% or 30%.
  • the weather resistance of the cover plate 1 can be further improved.
  • the porosity of the second anti-reflection layer 41 is 19%.
  • a double or more anti-reflection layer can better adjust the total refractive index and thickness of the anti-reflection layer, so as to facilitate matching the passivation layer on the cell to achieve the best visual effect (i.e., uniform color and no glare).
  • the thickness of the first anti-reflection layer 40 is 100nm and the refractive index is 1.25
  • the light transmittance of the laminate formed by the cover plate 1 and the anti-reflection layer 4 is greater than or equal to 90%. At this time, it is more conducive to the light irradiation on the cell 2, so as to improve the utilization rate of the visible light by the cell 2 and improve the photoelectric conversion efficiency of the photovoltaic module.
  • the light transmittance of the laminate formed by the cover plate 1 and the anti-reflection layer 4 is greater than or equal to 93%.
  • the anti-reflection layer includes at least one of a silicon nitride anti-reflection layer, a silicon oxide anti-reflection layer, and a titanium oxide anti-reflection layer.
  • the material of the first anti-reflection layer and the second anti-reflection layer can be at least one of silicon nitride, silicon oxide, or titanium oxide.
  • the anti-reflection layer may be formed on the cover plate by a process such as sputtering.
  • the cover plate may be soda glass, and the thickness may be 3.2 mm or 2.0 mm.
  • the refractive index of the cover plate is about 1.5, and the refractive index of air is about 1.0.
  • FIG4 shows the case where incident light (such as sunlight) passes through the first anti-reflection layer 40, the second anti-reflection layer 41 and the cover plate 1 in sequence, and the light located in the cover plate 1 is the transmitted light.
  • the refractive index of air is less than the refractive index of the first anti-reflection layer, less than the refractive index of the second anti-reflection layer, less than the refractive index of the cover plate, it can be seen that the refractive index increases successively from air to the cover plate, so that the refraction angle of the incident light gradually decreases and gradually tends to vertical incidence, at which time the utilization rate of light increases.
  • the cell is a back contact cell, so that there is no grid line and solder strip blocking the front side, and the color is more uniform.
  • the photovoltaic module further includes: a first adhesive film layer 5 and a second adhesive film layer 6.
  • the first adhesive film layer 5 is located between the cover plate 1 and the battery cell 2
  • the second adhesive film layer 6 is located between the battery cell 2 and the packaging plate 3.
  • the first adhesive film layer 5 and the second adhesive film layer 6 are used to wrap the battery cell.
  • the first adhesive film layer or the second adhesive film layer may be one of ethylene-vinyl acetate copolymer (EVA), polyolefin elastomer (POE), polyvinyl butyral (PVB), and ionomer.
  • EVA ethylene-vinyl acetate copolymer
  • POE polyolefin elastomer
  • PVB polyvinyl butyral
  • ionomer ethylene-vinyl acetate copolymer
  • the first adhesive film layer or the second adhesive film layer may be made of the same material or may not be made of the same material.
  • the first adhesive film layer (or the second adhesive film layer) can be a double-layer adhesive film layer or a triple-layer adhesive film layer.
  • the first adhesive film layer (or the second adhesive film layer) can be an EP structure or an EPE structure.
  • the thickness of the first adhesive film layer (or the second adhesive film layer) is greater than or equal to 0.4 mm and less than or equal to 0.6 mm.
  • the thickness of the first adhesive film layer (or the second adhesive film layer) is greater than the thickness of the welding strip to ensure the reliability of lamination.
  • the photovoltaic module forms a battery string structure through multiple welding strips, and the welding strips are only arranged on the backlight surface of the battery cell.
  • the welding strips can be flat welding strips, and their cross-sectional dimensions can be 0.35mm*0.6mm.
  • a bonding layer is arranged on the surface of the flat welding strip, and the bonding layer can be a tin-lead alloy.
  • the length of the battery cell is greater than or equal to 180 mm and less than or equal to Equal to 220mm.
  • the length of the battery cell can be 180mm, 185mm, 190mm, 195mm, 200mm, 205mm, 210mm, 215mm or 220mm, etc.
  • the battery cell is a back contact battery cell, and the thickness is greater than or equal to 100 ⁇ m and less than or equal to 180 ⁇ m.
  • the thickness of the battery cell can be 100 ⁇ m, 110 ⁇ m, 120 ⁇ m, 130 ⁇ m, 140 ⁇ m, 150 ⁇ m, 160 ⁇ m, 170 ⁇ m or 180 ⁇ m, etc.
  • the front of the back contact battery cell is not blocked by grid lines and welding strips, and it can have a better front appearance and the best color uniformity effect.
  • the photovoltaic module when the encapsulation board is a transparent board, the photovoltaic module is a double-glass photovoltaic module.
  • the photovoltaic module is a single-glass photovoltaic module.
  • the package board is a black organic package board or a black glazed package board.
  • the photovoltaic module is a full black photovoltaic module, that is, a full black photovoltaic module.
  • the front appearance of the photovoltaic module can be made completely black, and the photovoltaic module visually presents a uniform color, which reduces the visual difference of the photovoltaic module and improves the aesthetics of the photovoltaic module.
  • the completely black photovoltaic module improves the utilization rate of visible light, thereby improving the photoelectric conversion efficiency of the photovoltaic module.
  • the black glaze packaging plate refers to a grid-shaped black glaze layer provided on an inorganic glass plate, wherein the black glaze layer is located between the battery cell and the inorganic glass plate to ensure that the front appearance of the photovoltaic module appears completely black.
  • the embodiment of the present application complements the visible light bands of different colors with them, and finally reaches a certain balance state to reduce the color difference between the bands.
  • the single-layer transmittance curve has a peak and will appear obvious blue.
  • the colorless curve has no obvious peaks and will not show any color through the adjustment of the refractive index of the two layers. See Table 1 for details.

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  • Photovoltaic Devices (AREA)

Abstract

本申请公开了一种光伏组件，涉及光伏技术领域，以解决光伏组件在视觉上具有较大的差异，美观度低的问题。所述光伏组件包括自上而下依次层叠设置的盖板、电池片和封装板。朝向盖板的一侧，电池片表面具有钝化层。钝化层的折射率大于或等于1.9，且小于或等于2.3。钝化层的厚度大于或等于50nm，且小于或等于100nm。盖板上设置有减反层，且减反层位于盖板远离电池片的一侧。减反层的厚度大于或等于100nm，且小于或等于230nm。减反层的折射率大于或等于1.1，且小于或等于1.4。

Description

一种光伏组件
本申请要求在2023年11月01日提交中国专利局、申请号为2023229529910、发明名称为“一种背接触光伏组件”的中国专利申请的优先权，以及2024年04月29日提交中国专利局、申请号为2024209230173、发明名称为“一种光伏组件”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光伏技术领域，尤其涉及一种光伏组件。
背景技术
光伏组件通常包括层压件、接线盒以及边框。上述层压件通常包括自上而下依次层叠设置的盖板、电池片层和背板。
现有技术中，电池片层朝向盖板的一侧通常具有钝化层。由于钝化层的存在，电池片一般呈现蓝色或深蓝色。此时利用上述电池片制作形成的光伏组件在视觉上具有较大的差异，美观度低。
发明内容
本申请的目的在于提供一种光伏组件，用于使光伏组件在视觉上呈现较为均一的颜色，以降低光伏组件在视觉上的差异，提高光伏组件的美观度。
为了实现上述目的，本申请提供了一种光伏组件。该光伏组件包括自上而下依次层叠设置的盖板、电池片和封装板。朝向盖板的一侧，电池片表面具有钝化层。钝化层的折射率大于或等于1.9，且小于或等于2.3。钝化层的厚度大于或等于50nm，且小于或等于100nm。盖板上设置有减反层，且减反层位于盖板远离电池片的一侧。减反层的厚度大于或等于100nm，且小于或等于230nm。减反层的折射率大于或等于1.1，且小于或等于1.4。
与现有技术相比，本申请提供的光伏组件中，当采用满足上述限定的钝化层和减反层制作光伏组件时，在钝化层和减反层的综合作用下，使得光伏组件在视觉上呈现较为均一的深蓝色或黑色，相比于现有技术中的光伏组件降低了在视觉上的差异，提高了光伏组件的美观度。进一步地，由于钝化层 的厚度和折射率，以及减反层的厚度和折射率均在一定的取值范围内，并非单一的绝对值。因此，上述四个限定条件的取值可以根据实际情况进行选择，此时，可以使光伏组件适应不同的应用场景，以扩大其的适用范围，便于推广。此外，采用上述厚度的减反层可以提升盖板的耐候性能。
在一种实现方式中，钝化层的折射率大于或等于2.0，且小于或等于2.2；减反层的折射率大于或等于1.2，且小于或等于1.3。
在一种实现方式中，减反层为包括至少两层的层叠结构。
在一种实现方式中，减反层包括依次层叠的第一减反层和第二减反层，第二减反层位于盖板和第一减反层之间。
采用上述技术方案的情况下，利用第二减反层不仅可以降低盖板表面的平整度，降低光反射方向不一致的情况。同时，还可以降低盖板的色差。进一步地，第一减反层利用其所具有的折射率可以使盖板的色差趋向于零，以降低或消除盖板与电池片结合后的色差，同时还可以提高光伏组件的美观度。
在一种实现方式中，第一减反层的厚度大于第二减反层的厚度。
在一种实现方式中，第一减反层的厚度大于或等于80nm，且小于或等于150nm；第二减反层的厚度大于或等于50nm，且小于或等于100nm。
在一种实现方式中，第一减反层的折射率小于第二减反层的折射率。
采用上述技术方案的情况下，可以保证盖板的耐候性能，以及获得镀膜匹配的优化值。另外，第一减反层和第二减反层的叠加厚度较厚，此时可以进一步提升盖板的耐候性能。此外，第一减反层和第二减反层的干涉相消，可以提升透光率，实现宽频减反。
在一种实现方式中，第一减反层的折射率大于或等于1.1，且小于或等于1.3；第二减反层的折射率大于或等于1.3，且小于或等于1.5。
在一种实现方式中，第一减反层的折射率大于或等于1.2，且小于或等于1.3；第二减反层的折射率大于或等于1.4，且小于或等于1.5。
在一种实现方式中，上述第一减反层的孔隙率大于第二减反层的孔隙率。此时，可以保证第一减反层的折射率小于第二减反层的折射率，以保证盖板的耐候性能，以及获得镀膜匹配的优化值。
在一种实现方式中，上述第一减反层的孔隙率大于或等于35％，小于或等于60％。此时，可以确保第一减反层的光学性能。
在一种实现方式中，上述第二减反层的孔隙率大于或等于10％，小于或 等于30％。此时，可以进一步提升盖板的耐候性能。
在一种实现方式中，上述盖板和减反层形成的叠层的透光率大于或等于90％。此时，更有利于光线照射到电池片上，以提高电池片对可见光的利用率，提高光伏组件的光电转换效率。
在一种实现方式中，上述钝化层包括层叠设置的第一钝化层和第二钝化层，第一钝化层位于盖板和第二钝化层之间。
采用上述技术方案的情况下，利用两个膜层调控电池片呈现的颜色相比于利用一个膜层调控更加方便，易于实现，降低难度。
在一种实现方式中，上述第一钝化层和第二钝化层中的一者为氧化铝钝化层，另一者为氮化硅钝化层。氧化铝钝化层的厚度大于或等于5nm，且小于或等于10nm；氧化铝钝化层的折射率大于或等于1.5，且小于或等于1.8。氮化硅钝化层的厚度大于或等于50nm，且小于或等于80nm；氮化硅钝化层的折射率大于或等于1.8，且小于或等于2.2。
在一种实现方式中，第一钝化层为氧化铝钝化层，第二钝化层为氮化硅钝化层。
在一种实现方式中，上述减反层包括氮化硅减反层、氧化硅减反层、氧化钛减反层中的至少一种。
在一种实现方式中，电池片为背接触电池片。
在一种实现方式中，上述光伏组件还包括：第一胶膜层和第二胶膜层。第一胶膜层位于盖板和电池片之间，第二胶膜层位于电池片和封装板之间，第一胶膜层和第二胶膜层用于包裹电池片。
在一种实现方式中，上述封装板为黑色有机封装板或黑色镀釉封装板。和/或，光伏组件为全黑光伏组件。
采用上述技术方案的情况下，可以使光伏组件正面外观显示为全黑，此时光伏组件在视觉上呈现均一的颜色，降低了光伏组件在视觉上的差异，提高了光伏组件的美观度。此外，全黑的光伏组件提高了对可见光的利用率，进而提高了光伏组件的光电转换效率。
上述说明仅是本申请技术方案的概述，为了能够更清楚了解本申请的技术手段，而可依照说明书的内容予以实施，并且为了让本申请的上述和其它目的、特征和优点能够更明显易懂，以下特举本申请的具体实施方式。
附图说明
此处所说明的附图用来提供对本申请的进一步理解，构成本申请的一部分，本申请的示意性实施例及其说明用于解释本申请，并不构成对本申请的不当限定。在附图中：
图1为本申请实施例中光伏组件的结构示意图；
图2为本申请实施例中电池片和钝化层的位置关系示意图；
图3为本申请实施例中盖板和减反层的位置关系示意图；
图4为本申请实施例中入射光、盖板和减反层的关系示意图；
图5为本申请实施例中电池片的结构示意图。
附图标记：
1-盖板，2-电池片，20-钝化层，200-第一钝化层，2002-氮化硅层；2001-
硅氧氮层，201-第二钝化层，3-封装板，4-减反层，40-第一减反层，41-第二减反层，5-第一胶膜层，6-第二胶膜层。
具体实施例
为了使本申请所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本申请，并不用于限定本申请。
需要说明的是，当元件被称为“固定于”或“设置于”另一个元件，它可以直接在另一个元件上或者间接在该另一个元件上。当一个元件被称为是“连接于”另一个元件，它可以是直接连接到另一个元件或间接连接至该另一个元件上。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。“若干”的含义是一个或一个以上，除非另有明确具体的限定。
在本申请的描述中，需要理解的是，术语“上”、“下”、“前”、“后”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
为了解决上述技术问题，本申请实施例提供了一种光伏组件。参见图1 至图3，该光伏组件包括自上而下依次层叠设置的盖板1、电池片2和封装板3。朝向盖板1的一侧，电池片2表面具有钝化层20。钝化层20的折射率大于或等于1.9，且小于或等于2.3。例如，钝化层20的折射率可以是1.9、1.93、1.95、1.98、2.0、2.05、2.08、2.1、2.13、2.16、2.19、2.2、2.23、2.25、2.28或2.3等。优选的，钝化层20的折射率大于或等于2.0，且小于或等于2.2。例如，钝化层20的折射率可以是2.0、2.05、2.08、2.1、2.13、2.16、2.19或2.2等。钝化层20的厚度D1大于或等于50nm，且小于或等于100nm。例如，钝化层20的厚度D1可以是50nm、60nm、70nm、80nm、92nm或100nm等。盖板1上设置有减反层4，且减反层4位于盖板1远离电池片2的一侧。减反层4的厚度D2大于或等于100nm，且小于或等于230nm。例如，减反层4的厚度D2可以是100nm、120nm、150nm、180nm、195nm、200nm或230nm等。减反层4的折射率大于或等于1.1，且小于或等于1.4。例如，减反层4的折射率可以是1.1、1.12、1.15、1.18、1.2、1.21、1.23、1.25、1.28、1.3、1.32、1.36、1.38或1.4等。优选的，减反层4的折射率大于或等于1.2，且小于或等于1.3。例如，减反层4的折射率可以是1.2、1.21、1.23、1.25、1.28或1.3等。应理解，钝化层20的厚度方向以及减反层4的厚度方向均与盖板1至封装板3的方向一致。
参见图1至图3，本申请实施例提供的光伏组件(优选为背接触光伏组件)中，当采用满足上述限定的钝化层20和减反层4制作光伏组件时，在钝化层20和减反层4的综合作用下，使得光伏组件在视觉上呈现较为均一的深蓝色或黑色，相比于现有技术中的光伏组件降低了在视觉上的差异，提高了光伏组件的美观度。进一步地，由于钝化层20的厚度和折射率，以及减反层4的厚度和折射率均在一定的取值范围内，并非单一的绝对值。因此，上述四个限定条件的取值可以根据实际情况进行选择，此时，可以使光伏组件适应不同的应用场景，以扩大其的适用范围，便于推广。例如，钝化层厚度为80nm、折射率为2.0时，需要减反层的厚度大于或等于120nm且小于或等于180nm、折射率大于或等于1.22且小于或等于1.25，其组件外观上呈现均一的蓝黑色。而，钝化层厚度为100nm、折射率为2.1时，需要设置减反层的厚度大于或等于150nm且小于或等于200nm、折射率大于或等于1.23且小于或等于1.28，其组件外观呈现均一的蓝黑色。
再进一步地，采用上述厚度的减反层4可以提升盖板1的耐候性能。此外，由于朝向盖板1的一侧，电池片2表面具有钝化层20。即电池片2的受 光面设置有钝化层20，此时钝化层可以钝化正面场，例如可以包括场钝化和界面钝化，以保护正面电场。
作为一种可能的实现方式，参见图1和图2，上述钝化层20包括至少两层钝化层的层叠结构，但是出于成本和制造工艺的考虑，钝化层20优选的包括层叠设置的第一钝化层200和第二钝化层201，第一钝化层200位于盖板1和第二钝化层201之间。利用两个膜层调控电池片2呈现的颜色相比于利用一个膜层调控更加方便，易于实现，降低难度。
在一种可选方式中，上述第一钝化层和第二钝化层中的一者为氧化铝钝化层，另一者为氮化硅钝化层。氧化铝钝化层的厚度大于或等于5nm，且小于或等于10nm。例如，氧化铝钝化层的厚度可以是5nm、6nm、7nm、8nm、9nm或10nm等。氧化铝钝化层的折射率大于或等于1.5，且小于或等于1.8。例如，氧化铝钝化层的折射率可以是1.5、1.55、1.6、1.65、1.7、1.75或1.8等。氮化硅钝化层的厚度大于或等于50nm，且小于或等于80nm。例如，氮化硅钝化层的厚度可以是50nm、52nm、60nm、66nm、70nm或80nm等。氮化硅钝化层的折射率大于或等于1.8，且小于或等于2.2。例如，氮化硅钝化层的折射率可以是1.8、1.85、1.9、1.95、2.0、2.05、2.1、2.15或2.2等。
优选的，第一钝化层为氧化铝钝化层，第二钝化层为氮化硅钝化层。
作为一种可能的实现方式，参照图5所示，第一钝化层200优选的包括两层结构，例如，包括少氧的氮化硅层2002(氮化硅层2002中硅和氮的原子数量比例不特定，可以含有极少量的氧)以及富氧的硅氧氮层2001(硅、氧和氮的原子数量比例不特定)；氮化硅层2002的厚度为30nm-60nm，例如，氮化硅层2002的厚度可以是30nm、35nm、40nm、45nm、55nm、60nm等。氮化硅层2002的折射率为1.9-2.3，例如，氮化硅层2002的折射率可以是1.9、1.95、2.0、2.05、2.1、2.15、2.2、2.25或2.3等。硅氧氮层2001的厚度为20nm-50nm，例如，硅氧氮层2001的厚度可以是20nm，25nm、30nm、35nm、40nm、45nm、50nm等。硅氧氮层2001的折射率为1.5-1.9，例如，硅氧氮层2001的折射率可以是1.5、1.55、1.6、1.65、1.7、1.75、1.8、1.85或1.9等。
当然，氮化硅层2002可以是一步沉积形成，也可以是多步沉积形成(即沉积几层叠加呈氮化硅层2002)，硅氧氮层2001亦是如此。
上述减反层可以是单层，也可以是至少两层。下面以两种可能的情况为例进行描述，应理解，以下描述仅用于理解，不用于具体限定。
示例一：上述减反层为单层，减反层的厚度大于或等于105nm，且小于或等于135nm。减反层的折射率大于或等于1.1，且小于或等于1.4。
示例二：减反层为包括至少两层的层叠结构。但是出于成本和制造工艺的考虑，参见图3，优选的上述减反层4包括依次层叠的第一减反层40和第二减反层41，第二减反层41位于盖板1和第一减反层40之间。
采用上述技术方案的情况下，利用第二减反层41不仅可以降低盖板1表面的平整度，降低光反射方向不一致的情况。同时，还可以降低盖板1的色差。进一步地，第一减反层40利用其所具有的折射率可以使盖板1的色差趋向于零，以降低或消除盖板1与电池片2结合后的色差，同时还可以提高光伏组件的美观度。
作为一种可能的实现方式，第一减反层的厚度大于第二减反层的厚度。
在一种可选方式中，第一减反层40的厚度大于或等于80nm，且小于或等于150nm。例如，第一减反层40的厚度可以是80nm、85nm、90nm、95nm、100nm、110nm、115nm、120nm、125nm、130nm、135nm、140nm或150nm等。优选的，第一减反层40的厚度大于或等于100nm，且小于或等于130nm。例如，第一减反层40的厚度可以是100nm、110nm、115nm、120nm、125nm或130nm等。
在一种可选方式中，第二减反层41的厚度大于或等于50nm，且小于或等于100nm。例如，第二减反层41的厚度可以是50nm、55nm、60nm、70nm、72nm、76nm、80nm、85nm、90nm、95nm或100nm等。优选的，第二减反层41的厚度大于或等于70nm，且小于或等于90nm。例如，第二减反层41的厚度可以是70nm、72nm、76nm、80nm、85nm或90nm等。
作为一种可能的实现方式，第一减反层的折射率小于第二减反层的折射率。
此时可以保证盖板1的耐候性能，以及获得镀膜匹配的优化值。另外，第一减反层40和第二减反层41的叠加厚度较厚，此时可以进一步提升盖板1的耐候性能。此外，第一减反层40和第二减反层41的干涉相消，可以提升透光率，实现宽频减反。
在一种可选方式中，第一减反层40的折射率大于或等于1.1，且小于或 等于1.3。例如，第一减反层40的折射率可以是1.1、1.15、1.18、1.2、1.21、1.23、1.25、1.28或1.3等。优选的，第一减反层40的折射率大于或等于1.2，且小于或等于1.3。例如，第一减反层40的折射率可以是1.2、1.21、1.23、1.25、1.28或1.3等。第二减反层41的折射率大于或等于1.3，且小于或等于1.5。例如，第二减反层41的折射率可以是1.3、1.33、1.36、1.39、1.4、1.42、1.45、1.46、1.48、1.49或1.5等。优选的，第二减反层41的折射率大于或等于1.4，且小于或等于1.5。例如，第二减反层41的折射率可以是1.4、1.42、1.45、1.46、1.48、1.49或1.5等。
折射率和孔隙率满足以下关系式：np 2＝(n2-1)(1-p)+1，其中np表示多孔薄膜的折射率，n表示SiO2的折射率，n＝1.553，p表示薄膜中孔洞所占的体积百分比。作为一种可能的实现方式，上述第一减反层40的孔隙率大于第二减反层41的孔隙率。此时，可以保证第一减反层40的折射率小于第二减反层41的折射率，以保证盖板1的耐候性能，以及获得镀膜匹配的优化值。
在一种可选方式中，上述第一减反层40的孔隙率大于或等于35％，小于或等于60％。例如，第一减反层40的孔隙率可以是35％、36％、40％、45％、49％、50％、55％或60％等。此时，可以确保第一减反层40的光学性能。优选的，第一减反层40的孔隙率为49％。
在一种可选方式中，上述第二减反层41的孔隙率大于或等于10％，小于或等于30％。例如，第二减反层41的孔隙率可以是10％、12％、16％、19％、20％、25％或30％等。此时，可以进一步提升盖板1的耐候性能。优选的，第二减反层41的孔隙率为19％。
作为优选的实施例，双层或更多层的减反层可以更好的调节减反层总的折射率以及厚度，这样便于匹配电池片上的钝化层以达到最优的视觉效果(即颜色均一，无眩光)。例如，对于双层的减反层而言，第一减反层40厚度为100nm、折射率为1.25时，需要设置第二减反层41厚度大于或等于80nm且小于或等于90nm、折射率大于或等于1.42且小于或等于1.46，获得的颜色均一性较好。
作为一种可能的实现方式，参见图1和图3，上述盖板1和减反层4形成的叠层的透光率为大于或等于90％。此时，更有利于光线照射到电池片2上，以提高电池片2对可见光的利用率，提高光伏组件的光电转换效率。优选的，盖板1与减反层4形成的叠层的透光率大于或等于93％。
作为一种可能的实现方式，上述减反层包括氮化硅减反层、氧化硅减反层、氧化钛减反层中的至少一种。示例性的，上述第一减反层和第二减反层的材质可以是氮化硅、氧化硅或氧化钛中的至少一种。
作为一种可能的实现方式，上述减反层可以通过溅射等工艺形成于盖板上。
在一种可选方式中，上述盖板可以是钠玻璃，厚度可以是3.2mm或2.0mm。盖板的折射率为1.5左右，空气的折射率为1.0左右。示例性的，图4示出了入射光(例如太阳光)依次经过第一减反层40、第二减反层41和盖板1的情况，位于盖板1内的为透射光。由于空气的折射率＜第一减反层的折射率＜第二减反层的折射率＜盖板的折射率，由此可知由空气至盖板，折射率依次增大，使得入射光的折射角逐渐减小，逐渐趋向于垂直入射，此时对光的利用率增加。
作为一种可能的实现方式，电池片为背接触电池片。以此可以实现正面无栅线和焊带的遮挡，颜色更加均一。
作为一种可能的实现方式，参见图1，上述光伏组件还包括：第一胶膜层5和第二胶膜层6。第一胶膜层5位于盖板1和电池片2之间，第二胶膜层6位于电池片2和封装板3之间，第一胶膜层5和第二胶膜层6用于包裹电池片。
在一种可选方式中，上述第一胶膜层或第二胶膜层可以是乙烯-醋酸乙烯共聚物(ethylene-vinyl acetate copolymer，缩写为EVA)、聚烯烃弹性体(Polyolefin elastomer，缩写为POE)、聚乙烯醇缩丁醛(Polyvinyl Butyral，缩写为PVB)、离子聚合物中的一种。上述第一胶膜层或第二胶膜层可以是同一种材料可以不是同一种材料。
在一种可选方式中，第一胶膜层(或第二胶膜层)可以是双层胶膜层，也可以是三层胶膜层。第一胶膜层(或第二胶膜层)可以是EP结构或EPE结构。第一胶膜层(或第二胶膜层)的厚度大于或等于0.4mm，且小于或等于0.6mm。第一胶膜层(或第二胶膜层)的厚度大于焊带的厚度，以保证层压的可靠性。
在一种可选方式中，上述光伏组件通过多根焊带形成电池串结构，焊带仅设置在电池片的背光面。焊带可以是扁平焊带，其截面尺寸可以是0.35mm*0.6mm。在扁平焊带表面设置有接合层，接合层可以是锡铅合金。
在一种可选方式中，上述电池片的长度大于或等于180mm，且小于或 等于220mm。例如，电池片的长度可以是180mm、185mm、190mm、195mm、200mm、205mm、210mm、215mm或220mm等。电池片为背接触电池片，且厚度大于或等于100μm，且小于或等于180μm。例如，电池片的厚度可以是100μm、110μm、120μm、130μm、140μm、150μm、160μm、170μm或180μm等。背接触电池片的正面无栅线和焊带遮挡，其可以具有更优的正面外观，其颜色均一性效果最佳。
在一种可选方式中，当封装板为透明板时，光伏组件为双玻光伏组件。当封装板为非透明板时，光伏组件为单玻光伏组件。
作为一种可能的实现方式，上述封装板为黑色有机封装板或黑色镀釉封装板。和/或，光伏组件为全黑光伏组件，即全黑光伏组件。
此时，可以使光伏组件正面外观显示为全黑，此时光伏组件在视觉上呈现均一的颜色，降低了光伏组件在视觉上的差异，提高了光伏组件的美观度。此外，全黑的光伏组件提高了对可见光的利用率，进而提高了光伏组件的光电转换效率。
示例性的，上述黑色镀釉封装板是指在无机玻璃板上设置网格状的黑色镀釉层，该黑色镀釉层位于电池片和无机玻璃板之间，以保证光伏组件正面外观显示为全黑。
综上所述，本申请实施例根据不同颜色的可见光波段与其进行光互补，最终达到一定的平衡状态，减少波段间的色差。根据光的互补，单层透光率曲线有波峰，会呈现明显蓝色，无色通过两层折射率调整，曲线无明显波峰，不会呈现出颜色，具体参见表1。
表1不同颜色的可见光波长与其互补光

在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以所述权利要求的保护范围为准。

Claims (19)

  1. 一种光伏组件，包括：自上而下依次层叠设置的盖板、电池片和封装板；其中，
    朝向所述盖板的一侧，所述电池片表面具有钝化层；所述钝化层的折射率大于或等于1.9，且小于或等于2.3；所述钝化层的厚度大于或等于50nm，且小于或等于100nm；
    所述盖板上设置有减反层，且所述减反层位于所述盖板远离所述电池片的一侧；
    所述减反层的厚度大于或等于100nm，且小于或等于230nm；所述减反层的折射率大于或等于1.1，且小于或等于1.4。
  2. 根据权利要求1所述的光伏组件，其中，所述钝化层的折射率大于或等于2.0，且小于或等于2.2；所述减反层的折射率大于或等于1.2，且小于或等于1.3。
  3. 根据权利要求1所述的光伏组件，其中，所述减反层为包括至少两层的层叠结构。
  4. 根据权利要求3所述的光伏组件，其中，所述减反层包括依次层叠的第一减反层和第二减反层，所述第二减反层位于所述盖板和所述第一减反层之间。
  5. 根据权利要求4所述的光伏组件，其中，所述第一减反层的厚度大于所述第二减反层的厚度。
  6. 根据权利要求5所述的光伏组件，其中，所述第一减反层的厚度大于或等于80nm，且小于或等于150nm；
    所述第二减反层的厚度大于或等于50nm，且小于或等于100nm。
  7. 根据权利要求4所述的光伏组件，其中，所述第一减反层的折射率小于所述第二减反层的折射率。
  8. 根据权利要求7所述的光伏组件，其中，所述第一减反层的折射率大于或等于1.1，且小于或等于1.3；所述第二减反层的折射率大于或等于1.3，且小于或等于1.5。
  9. 根据权利要求8所述的光伏组件，其中，所述第一减反层的折射率大于或等于1.2，且小于或等于1.3；所述第二减反层的折射率大于或等于1.4，且小于或等于1.5。
  10. 根据权利要求4所述的光伏组件，其中，所述第一减反层的孔隙率大于所述第二减反层的孔隙率。
  11. 根据权利要求10所述的光伏组件，其中，所述第一减反层的孔隙率大于或等于35％，小于或等于60％；所述第二减反层的孔隙率大于或等于10％，小于或等于30％。
  12. 根据权利要求1所述的光伏组件，其中，所述盖板和所述减反层形成的叠层的透光率大于或等于90％。
  13. 根据权利要求1-12任一项所述的光伏组件，其中，所述钝化层包括层叠设置的第一钝化层和第二钝化层；所述第一钝化层位于所述盖板和所述第二钝化层之间。
  14. 根据权利要求13所述的光伏组件，其中，
    所述第一钝化层和所述第二钝化层中的一者为氧化铝钝化层，另一者为氮化硅钝化层；
    所述氧化铝钝化层的厚度大于或等于5nm，且小于或等于10nm；所述氧化铝钝化层的折射率大于或等于1.5，且小于或等于1.8；
    所述氮化硅钝化层的厚度大于或等于50nm，且小于或等于80nm；所述氮化硅钝化层的折射率大于或等于1.8，且小于或等于2.2。
  15. 根据权利要求13所述的光伏组件，其中，所述第一钝化层为氧化铝钝化层，所述第二钝化层为氮化硅钝化层。
  16. 根据权利要求1所述的光伏组件，其中，所述减反层包括氮化硅减反层、氧化硅减反层、氧化钛减反层中的至少一种。
  17. 根据权利要求1所述的光伏组件，其中，所述电池片为背接触电池片。
  18. 根据权利要求1所述的光伏组件，其中，所述光伏组件还包括：
    第一胶膜层，位于所述盖板和所述电池片之间；
    第二胶膜层，位于所述电池片和所述封装板之间；
    所述第一胶膜层和所述第二胶膜层用于包裹所述电池片。
  19. 根据权利要求1所述的光伏组件，其中，所述封装板为黑色有机封装板或黑色镀釉封装板；和/或，
    所述光伏组件为全黑光伏组件。
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