AT193495B - Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal - Google Patents

Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal

Info

Publication number
AT193495B
AT193495B AT193495DA AT193495B AT 193495 B AT193495 B AT 193495B AT 193495D A AT193495D A AT 193495DA AT 193495 B AT193495 B AT 193495B
Authority
AT
Austria
Prior art keywords
applying
ohmic contact
body made
divalent metal
semiconducting body
Prior art date
Application number
Other languages
German (de)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT193495B publication Critical patent/AT193495B/en

Links

AT193495D 1954-12-01 1955-11-28 Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal AT193495B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL193495X 1954-12-01

Publications (1)

Publication Number Publication Date
AT193495B true AT193495B (en) 1957-11-25

Family

ID=19778000

Family Applications (1)

Application Number Title Priority Date Filing Date
AT193495D AT193495B (en) 1954-12-01 1955-11-28 Method for applying an ohmic contact to a semiconducting body made of a p-conductive telluride of a divalent metal

Country Status (1)

Country Link
AT (1) AT193495B (en)

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