AT318542B - Process for making silicon carbide whiskers - Google Patents

Process for making silicon carbide whiskers

Info

Publication number
AT318542B
AT318542B AT209971A AT209971A AT318542B AT 318542 B AT318542 B AT 318542B AT 209971 A AT209971 A AT 209971A AT 209971 A AT209971 A AT 209971A AT 318542 B AT318542 B AT 318542B
Authority
AT
Austria
Prior art keywords
silicon carbide
carbide whiskers
making silicon
making
whiskers
Prior art date
Application number
AT209971A
Other languages
German (de)
Original Assignee
Lonza Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lonza Ag filed Critical Lonza Ag
Application granted granted Critical
Publication of AT318542B publication Critical patent/AT318542B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT209971A 1970-06-05 1971-03-11 Process for making silicon carbide whiskers AT318542B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH842470A CH526336A (en) 1970-06-05 1970-06-05 Process for making whiskers

Publications (1)

Publication Number Publication Date
AT318542B true AT318542B (en) 1974-10-25

Family

ID=4340121

Family Applications (1)

Application Number Title Priority Date Filing Date
AT209971A AT318542B (en) 1970-06-05 1971-03-11 Process for making silicon carbide whiskers

Country Status (11)

Country Link
AT (1) AT318542B (en)
BE (1) BE767711A (en)
BR (1) BR7102227D0 (en)
CH (1) CH526336A (en)
DE (1) DE2127473A1 (en)
ES (1) ES389468A1 (en)
FR (1) FR2097792A5 (en)
GB (1) GB1284688A (en)
NL (1) NL7107194A (en)
SE (1) SE376896B (en)
SU (1) SU401042A3 (en)

Also Published As

Publication number Publication date
DE2127473A1 (en) 1971-12-09
GB1284688A (en) 1972-08-09
SU401042A3 (en) 1973-10-01
BR7102227D0 (en) 1973-04-10
FR2097792A5 (en) 1972-03-03
NL7107194A (en) 1971-12-07
CH526336A (en) 1972-08-15
SE376896B (en) 1975-06-16
BE767711A (en) 1971-11-26
ES389468A1 (en) 1973-06-01

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee