AT500499A3 - Mittelpunktbestimmung von justiermarken - Google Patents

Mittelpunktbestimmung von justiermarken Download PDF

Info

Publication number
AT500499A3
AT500499A3 AT0114105A AT11412005A AT500499A3 AT 500499 A3 AT500499 A3 AT 500499A3 AT 0114105 A AT0114105 A AT 0114105A AT 11412005 A AT11412005 A AT 11412005A AT 500499 A3 AT500499 A3 AT 500499A3
Authority
AT
Austria
Prior art keywords
center determination
adjustment marks
marks
adjustment
determination
Prior art date
Application number
AT0114105A
Other languages
English (en)
Other versions
AT500499A2 (de
AT500499B1 (de
Original Assignee
Suess Microtec Lithography
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suess Microtec Lithography filed Critical Suess Microtec Lithography
Publication of AT500499A2 publication Critical patent/AT500499A2/de
Publication of AT500499A3 publication Critical patent/AT500499A3/de
Application granted granted Critical
Publication of AT500499B1 publication Critical patent/AT500499B1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/57—Mask-wafer alignment
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/26—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes
    • G01B11/27—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes
    • G01B11/272—Measuring arrangements characterised by the use of optical techniques for measuring angles or tapers; for testing the alignment of axes for testing the alignment of axes using photoelectric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/66—Analysis of geometric attributes of image moments or centre of gravity
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/60—Analysis of geometric attributes
    • G06T7/68—Analysis of geometric attributes of symmetry
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
AT0114105A 2004-07-07 2005-07-06 Mittelpunktbestimmung von justiermarken AT500499B1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102004032933A DE102004032933B3 (de) 2004-07-07 2004-07-07 Mittelpunktbestimmung von drehsymmetrischen Justiermarken

Publications (3)

Publication Number Publication Date
AT500499A2 AT500499A2 (de) 2006-01-15
AT500499A3 true AT500499A3 (de) 2007-05-15
AT500499B1 AT500499B1 (de) 2007-11-15

Family

ID=35483468

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0114105A AT500499B1 (de) 2004-07-07 2005-07-06 Mittelpunktbestimmung von justiermarken

Country Status (3)

Country Link
US (1) US7567699B2 (de)
AT (1) AT500499B1 (de)
DE (1) DE102004032933B3 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007010223B4 (de) * 2007-02-28 2010-07-29 Vistec Semiconductor Systems Gmbh Verfahren zur Bestimmung geometrischer Parameter eines Wafers und Verwendung des Verfahren bei der optischen Inspektion von Wafern
DE102007024121A1 (de) * 2007-05-24 2008-11-27 Süss Micro Tec Lithography GmbH Ausrichten zweier Substrate mit jeweils zwei Justiermarken
DE102010047051A1 (de) * 2010-09-29 2012-03-29 Carl Zeiss Sms Gmbh Verfahren zur Bestimmung der Position einer Struktur innerhalb eines Bildes und Positionsmessvorrichtung zur Durchführung des Verfahrens
SG188576A1 (en) * 2010-10-26 2013-04-30 Ev Group E Thallner Gmbh Method for determining the position of an axis rotation
US9383196B2 (en) * 2012-03-08 2016-07-05 Applied Materials Israel Ltd. System, method and computed readable medium for evaluating a parameter of a feature having nano-metric dimensions
CN103713477B (zh) * 2012-09-28 2015-11-25 无锡华润上华半导体有限公司 双面光刻机的对位结构及对位方法
CN102927540B (zh) * 2012-11-02 2014-09-03 阳江纳谷科技有限公司 用于模块化发光二极管电路组件的装置、方法及系统
DE102013211403B4 (de) 2013-06-18 2020-12-17 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zum automatisierten Bestimmen eines Referenzpunktes einer Ausrichtungsmarkierung auf einem Substrat einer photolithographischen Maske
NL2023577B1 (en) 2019-07-26 2021-02-18 Suss Microtec Lithography Gmbh Method for detecting alignment marks, method for aligning a first substrate relative to a second substrate as well as apparatus
GB202010350D0 (en) * 2020-07-06 2020-08-19 Univ Strathclyde Methods and apparatus for use in the spatial registration of objects
CN115345867A (zh) * 2022-08-25 2022-11-15 成都国翼电子技术有限公司 对称、非对称靶标及基于图像几何学的靶标识别方法
CN115578449A (zh) * 2022-09-23 2023-01-06 厦门汉印电子技术有限公司 一种网板定位方法、装置、设备和存储介质

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3989385A (en) * 1974-09-16 1976-11-02 International Business Machines Corporation Part locating, mask alignment and mask alignment verification system
US5086477A (en) * 1990-08-07 1992-02-04 Northwest Technology Corp. Automated system for extracting design and layout information from an integrated circuit
JP3558511B2 (ja) * 1997-10-22 2004-08-25 株式会社リコー 重ね合わせ精度測定パターン及び重ね合わせ精度測定方法
JP3808192B2 (ja) * 1997-11-19 2006-08-09 株式会社ソキア 移動量測定装置、及び移動量測定方法
US6200708B1 (en) * 1998-03-30 2001-03-13 Worldwide Semiconductor Manufacturing Corporation Method for automatically determining adjustments for stepping photolithography exposures
US5982044A (en) * 1998-04-24 1999-11-09 Vanguard International Semiconductor Corporation Alignment pattern and algorithm for photolithographic alignment marks on semiconductor substrates
US6628406B1 (en) * 2000-04-20 2003-09-30 Justin L. Kreuzer Self referencing mark independent alignment sensor
JP2002025882A (ja) * 2000-06-30 2002-01-25 Hitachi Electronics Eng Co Ltd パターンの重ね合わせ誤差測定装置および方法
DE60319462T2 (de) * 2002-06-11 2009-03-12 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US6682863B2 (en) * 2002-06-27 2004-01-27 Eastman Kodak Company Depositing an emissive layer for use in an organic light-emitting display device (OLED)
US6811938B2 (en) * 2002-08-29 2004-11-02 Eastman Kodak Company Using fiducial marks on a substrate for laser transfer of organic material from a donor to a substrate
KR101015778B1 (ko) * 2003-06-03 2011-02-22 도쿄엘렉트론가부시키가이샤 기판 처리장치 및 기판 수수 위치의 조정 방법
US7089677B2 (en) * 2004-05-05 2006-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Method for calibrating alignment mark positions on substrates

Also Published As

Publication number Publication date
US20070008532A1 (en) 2007-01-11
DE102004032933B3 (de) 2006-01-05
AT500499A2 (de) 2006-01-15
US7567699B2 (en) 2009-07-28
AT500499B1 (de) 2007-11-15

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Legal Events

Date Code Title Description
HC Change of the firm name or firm address

Owner name: SUSS MICROTEC LITHOGRAPHY GMBH, DE

Effective date: 20151028

MK07 Expiry

Effective date: 20250706