AT517748A5 - Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat - Google Patents

Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat

Info

Publication number
AT517748A5
AT517748A5 ATA9032/2013A AT90322013A AT517748A5 AT 517748 A5 AT517748 A5 AT 517748A5 AT 90322013 A AT90322013 A AT 90322013A AT 517748 A5 AT517748 A5 AT 517748A5
Authority
AT
Austria
Prior art keywords
substrate
product substrate
layer
product
connection
Prior art date
Application number
ATA9032/2013A
Other languages
English (en)
Other versions
AT517748B1 (de
Inventor
Burggraf Jürgen
Mittendorfer Gerald
Original Assignee
Ev Group E Thallner Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ev Group E Thallner Gmbh filed Critical Ev Group E Thallner Gmbh
Publication of AT517748A5 publication Critical patent/AT517748A5/de
Application granted granted Critical
Publication of AT517748B1 publication Critical patent/AT517748B1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7408—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including alignment aids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zum temporlh·en Verbinden eines Produktsubstrats (2) mit einem Trägersubstrat (6) mit folgenden V erfah rensschritten: Aufbringen einer Verbindungsschicht (5) auf eine Produktsubstrataufnahmeseite (6o) des Trägersubstrats (6) in einem Verbindungsflächenabschnitt (13) der Produktsubstratufnahmeseite (6o), Aufbringen einer Antihaftschicht (4) mit geringer Adhäsionskraft auf eine Verbindungsseite (2u) des Prod\.tktsubstrats (2) in einem mit dem Verbindungsflächenabschnitt (13) zumindest teilweise, insbesondere zumindest überwiegend, vorzugsweise im Wesentlichen vollständig, flächenmäßig korrespondierenden AntihaftfUichenabschnitt (15) der Verbindungsseite (2u), wobei ein von der Verbindungsschicht (5) und dem Trigersubstrat (6) sowie dem Produktsubstrat (2) und der Antihaftschicht (4) begrenzter Aufnahmeraum (14) zur Aufnahme von an der Verbindungsseite (2u) des Produktsubstrat (2) vorgesehenen, von der Verbindungsseite (2u) abstehenden Strukturen (3) gebildet wird, Ausrichten des Produktsubstrats (2) gegenüber dem Trägersubstrat (6) und Verbinden der Verbindungsschicht (S) mit der Antihaftschicht (4) an einer Kontaktfläche (16).
ATA9032/2013A 2012-02-16 2013-01-17 Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat AT517748B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012101237A DE102012101237A1 (de) 2012-02-16 2012-02-16 Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat
PCT/EP2013/050849 WO2013120648A1 (de) 2012-02-16 2013-01-17 Verfahren zum temporären verbinden eines produktsubstrats mit einem trägersubstrat

Publications (2)

Publication Number Publication Date
AT517748A5 true AT517748A5 (de) 2017-04-15
AT517748B1 AT517748B1 (de) 2023-05-15

Family

ID=47594741

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA9032/2013A AT517748B1 (de) 2012-02-16 2013-01-17 Verfahren zum temporären Verbinden eines Produktsubstrats mit einem Trägersubstrat

Country Status (8)

Country Link
US (1) US9390956B2 (de)
JP (1) JP6140194B2 (de)
KR (1) KR102061369B1 (de)
CN (1) CN104115267B (de)
AT (1) AT517748B1 (de)
DE (2) DE102012101237A1 (de)
SG (1) SG11201404960TA (de)
WO (1) WO2013120648A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101502239B1 (ko) * 2013-11-29 2015-03-19 엘지디스플레이 주식회사 기판분리장치
US10978334B2 (en) * 2014-09-02 2021-04-13 Applied Materials, Inc. Sealing structure for workpiece to substrate bonding in a processing chamber
CN104916574B (zh) * 2015-04-22 2017-11-10 四川虹视显示技术有限公司 一种柔性oled脱膜装置
TWI557831B (zh) * 2015-05-15 2016-11-11 友達光電股份有限公司 微組件的傳送方法
DE102015118742A1 (de) * 2015-11-02 2017-05-04 Ev Group E. Thallner Gmbh Verfahren zum Bonden und Lösen von Substraten
DE102016106351A1 (de) * 2016-04-07 2017-10-12 Ev Group E. Thallner Gmbh Verfahren und Vorrichtung zum Bonden zweier Substrate
CN111048461B (zh) * 2018-10-12 2022-06-03 瀚宇彩晶股份有限公司 电子装置的离型前结构及电子装置的制造方法
WO2020178080A1 (en) * 2019-03-05 2020-09-10 Evatec Ag Method for processing fragile substrates employing temporary bonding of the substrates to carriers
CN114514600B (zh) * 2019-11-08 2025-10-31 Ev集团E·索尔纳有限责任公司 用于连接基板的装置及方法
FR3113771B1 (fr) * 2020-08-27 2022-10-21 Commissariat Energie Atomique Procédé de fabrication d'un substrat-poignée destiné au collage temporaire d'un substrat.
KR102788502B1 (ko) * 2023-07-27 2025-04-01 한국기계연구원 효과적인 디본딩이 가능한 웨이퍼 모듈, 및 이의 본딩 및 디본딩 방법

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863375A (en) * 1995-10-31 1999-01-26 Samsung Electronics Co., Ltd. Apparatus and methods for wafer debonding using a liquid jet
US6462415B1 (en) * 2000-01-11 2002-10-08 Fujitsu Limited Semiconductor device as an object of thickness reduction
JP2004288725A (ja) * 2003-03-19 2004-10-14 Citizen Watch Co Ltd 半導体装置の製造方法，この製造方法に用いるシール部材及びこのシール部材の供給装置
EP1681713A1 (de) * 2003-10-16 2006-07-19 LINTEC Corporation Oberflächenschutzfilm und halbleiterwafer-lapping-verfahren
US20060166464A1 (en) * 2002-11-29 2006-07-27 Fraunhofer Gesellschaft Zur Forderung Der ... Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
WO2007099146A1 (de) * 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung
US20090017248A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
EP2398040A1 (de) * 2010-06-21 2011-12-21 Brewer Science, Inc. Verfahren und Vorrichtung zum Entfernen eines umgekehrt montierten Systemwafers von einem Trägersubstrat

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0828580B2 (ja) * 1993-04-21 1996-03-21 日本電気株式会社 配線基板構造及びその製造方法
DE4339604C2 (de) 1993-11-20 1996-06-05 Beiersdorf Ag Verwendung eines Klebfolien-Abschnitts für eine wiederablösbare Verklebung
DE10140827B4 (de) 2001-08-21 2004-07-29 Infineon Technologies Ag Vorrichtung zum Debonden von Dünnwafern
JP2006086479A (ja) * 2004-09-17 2006-03-30 Toshiba Corp 薄膜基板の保持方法及び半導体装置の製造方法
DE102006000687B4 (de) * 2006-01-03 2010-09-09 Thallner, Erich, Dipl.-Ing. Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers
GB0602410D0 (en) 2006-02-07 2006-03-15 Filtronic Compound Semiconduct A method of bonding a semiconductor wafer to a support substrate
JP2007214271A (ja) * 2006-02-08 2007-08-23 Zycube:Kk 基板の接合方法および半導体装置
JP2006332686A (ja) * 2006-07-03 2006-12-07 Matsushita Electric Ind Co Ltd 固体撮像装置
JP5338250B2 (ja) * 2008-08-21 2013-11-13 株式会社東京精密 ワーク分離方法及び切削加工装置
JP2010283097A (ja) * 2009-06-04 2010-12-16 Lintec Corp 両面接着シート
US7975378B1 (en) * 2010-01-06 2011-07-12 Banpil Photonics, Inc. Method of manufacturing high speed printed circuit board interconnects
US7883991B1 (en) 2010-02-18 2011-02-08 Taiwan Semiconductor Manufacturing Company, Ltd. Temporary carrier bonding and detaching processes

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5863375A (en) * 1995-10-31 1999-01-26 Samsung Electronics Co., Ltd. Apparatus and methods for wafer debonding using a liquid jet
US6462415B1 (en) * 2000-01-11 2002-10-08 Fujitsu Limited Semiconductor device as an object of thickness reduction
US20060166464A1 (en) * 2002-11-29 2006-07-27 Fraunhofer Gesellschaft Zur Forderung Der ... Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer
JP2004288725A (ja) * 2003-03-19 2004-10-14 Citizen Watch Co Ltd 半導体装置の製造方法，この製造方法に用いるシール部材及びこのシール部材の供給装置
EP1681713A1 (de) * 2003-10-16 2006-07-19 LINTEC Corporation Oberflächenschutzfilm und halbleiterwafer-lapping-verfahren
WO2007099146A1 (de) * 2006-03-01 2007-09-07 Jakob + Richter Ip-Verwertungsgesellschaft Mbh Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung
US20090017248A1 (en) * 2007-07-13 2009-01-15 3M Innovative Properties Company Layered body and method for manufacturing thin substrate using the layered body
EP2398040A1 (de) * 2010-06-21 2011-12-21 Brewer Science, Inc. Verfahren und Vorrichtung zum Entfernen eines umgekehrt montierten Systemwafers von einem Trägersubstrat

Also Published As

Publication number Publication date
KR20140128976A (ko) 2014-11-06
AT517748B1 (de) 2023-05-15
CN104115267B (zh) 2017-08-25
DE112013000980B4 (de) 2020-09-24
DE112013000980A5 (de) 2014-11-27
US20140374144A1 (en) 2014-12-25
WO2013120648A1 (de) 2013-08-22
JP6140194B2 (ja) 2017-05-31
JP2015507373A (ja) 2015-03-05
KR102061369B1 (ko) 2020-02-11
CN104115267A (zh) 2014-10-22
US9390956B2 (en) 2016-07-12
SG11201404960TA (en) 2014-11-27
DE102012101237A1 (de) 2013-08-22

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