AT518081A4 - Injektor aus Silizium für die Halbleiterindustrie - Google Patents
Injektor aus Silizium für die Halbleiterindustrie Download PDFInfo
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- AT518081A4 AT518081A4 ATA815/2015A AT8152015A AT518081A4 AT 518081 A4 AT518081 A4 AT 518081A4 AT 8152015 A AT8152015 A AT 8152015A AT 518081 A4 AT518081 A4 AT 518081A4
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0402—Apparatus for fluid treatment
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Vorgeschlagen wird ein Injektor (1), der aus Silizium gefertigt ist und der bei Prozessen, insbesondere Prozessen in der Halbleitertechnik, das Einleiten von Behandlungsgas in Prozesskammern erlaubt. Der Injektor (1) ist als Rohr (2) ausgebildet, in dem Austrittsöffnungen für das in die Prozesskammer einzubringende Behandlungsgas vorgesehen sind. In dem Rohr (2), das als Injektor 1 dient, ist wenigstens ein Gasströmkanal (4) vorgesehen. Das Profil des als Injektor (1) dienenden Rohres ist unrund, weicht also von einem kreisförmigen Profil ab, wobei längliche, dreieckige oder sternförmige Profilformen in Betracht gezogen sind.
Description
Die Erfindung betrifft einen Injektor mit den Merkmalen des einleitenden Teils von Patentanspruch 1.
Beim Herstellen von Wafern werden die Wafer in Halterungen (Boote) eingesetzt und in Behandlungsräume (Öfen) eingebracht, in denen sie mit einem Gas behandelt werden.
Das Behandlungsgas wird in den Ofen über einen Injektor, der im Normalfall als gebogenes oder gewinkeltes, mit Löchern versehenes Rohr aus Quarzglas ausgebildet ist, eingebracht.
Problematisch bei den bekannten Injektoren aus Quarzglas ist es, dass Ablagerungen, die aufgrund des Behandlungsprozesses auf dem Injektor aus Quarzglas entstehen, aufgrund thermischer Spannungen abspringen (flakings) und das ordnungsgemäße Herstellen von Wafern beeinträchtigen können.
Es entstehen durch das Absplittern Partikel, die in Prozessen der Halbleiterindustrie nicht erwünscht sind.
Der Erfindung liegt die Aufgabe zugrunde, einen Injektor zur Verfügung zu stellen, der die geschilderten Probleme nicht verursacht.
Gelöst wird diese Aufgabe erfindungsgemäß mit einem Injektor, der das Merkmal von Patentanspruch 1 aufweist.
Bevorzugte und vorteilhafte Ausgestaltungen des erfindungsgemäßen Injektors sind Gegenstand der ünteransprüche.
Da der erfindungsgemäße Injektor als Rohr aus Silizium ausgebildet ist, ergeben sich keine thermischen Spannungen, die das Abplatzen von Ablagerungen (flakings) verursachen könnten. Überdies wird mit dem erfindungsgemäßen Injektor das Bilden von Ablagerungen verhindert oder wenigstens verringert.
Der erfindungsgemäße Injektor aus Silizium ist nicht nur ein gerades Rohr, sondern es kann auch ein gebogenes oder abgewinkeltes Rohr sein.
Um dem erfindungsgemäßen Injektor aus Silizium eine für seinen Einsatz in Öfen zum Behandeln von Wafern mit Behandlungsgas, auch bei erhöhten Temperaturen, hinreichende mechanische Stabilität zu geben, ist das Profil des Injektors in einer Ausführungsform anders als kreisrund.
Beispielsweise kann das Profil des Injektors, insbesondere im Querschnitt, rechteckig, länglich oval, dreieckig oder sternförmig ausgebildet sein.
Die erfindungsgemäße Ausbildung des Injektors mit seinem unrunden, also nicht kreisrunden Profil, erlaubt es auch, in dem Injektor mehr als einen Hohlraum (Kanal) für das Zuführen von Behandlungsgas vorzusehen. Zwei Kanäle haben den Vorteil, dass alternativ unterschiedliche Behandlungsgase zugeführt werden können. Wenn einer der Kanäle verlegt ist, kann der andere Kanal für das Zuführen von Behandlungsgas in den Ofen zum Behandeln von Wafern, die in Boote eingesetzt sind, eingesetzt werden.
Mit dem Begriff "Profil" wird im Vorliegenden die äußere Form des erfindungsgemäß als Injektor verwendeten Rohres verstanden.
Der im Vorliegenden verwendete Begriff "unrund" umfasst alle Profile, die im Querschnitt nicht kreisrund sind.
Weitere Einzelheiten und Merkmale der Erfindung ergeben sich aus der nachstehenden Beschreibung bevorzugter Ausführungsbeispiele anhand der Zeichnungen. Es zeigen:
Fig. 1 bis 7 im Querschnitt unterschiedliche Profile von als Injektor dienenden Rohren aus Silizium.
Der erfindungsgemäße Injektor 1, der aus Silizium gefertigt ist, ist als Rohr ausgebildet, das gerade, gebogen oder gewinkelt (z.B. um 85 - 95°) sein kann.
Bei der in Fig. 1 gezeigten Ausführungsform eines Injektors 1 aus Silizium hat das Rohr 2 ein im Wesentlichen rechteckiges Profil mit konvex gekrümmten Schmalflächen 3. In dem Rohr 2 ist ein Kanal 4 mit kreisrundem Querschnitt vorgesehen.
Bei der in Fig. 2 gezeigten Ausführungsform ist das Profil des Rohres 2, das den Injektor 1 bildet, rechteckig.
In Fig. 3 ist eine Ausführungsform eines als Injektor 1 dienenden Rohres 2 gezeigt, in dem zwei Kanäle 4 vorgesehen sind. Das Profil des Rohres 2 ist länglich, wobei die Schmalflächen 3 des Rohres, die konvex gekrümmt sind, über Abrundungen 5 in die Seitenflächen 6 des Rohres übergehen.
Fig. 4 zeigt ein Rohr 2, das als Injektor 1 eingesetzt werden kann, dessen Profil dem in Fig. 3 gezeigte Profil ähnlich ist, wobei im Rohr 2 ein im Querschnitt länglich ausgebildeter Kanal 4 vorgesehen ist.
Fig. 5 zeigt eine Abwandlung der in Fig. 2 gezeigten Ausführungsform eines Rohres 2, das als Injektor 1 eingesetzt werden kann, bei dem im Bereich des Kanals 4 in den Seitenflächen β des Rohres Ausbauchungen 7 vorgesehen sind. Das in Fig. 5 gezeigte Profil des Rohres 2 kann auch als das eines kreisrunden Rohres mit zwei Rippen verstanden werden.
Fig. 6 zeigt eine Ausführungsform eines Rohres 2, das als Injektor 1 eingesetzt werden kann, bei der das Profil des Rohres 2 ein gleichseitiges Dreieck ist. Alternativ zu einem gleichseitigen Dreieck kann das Profil des Rohres 2 ein gleichschenkeliges oder ein beliebiges Dreieck sein.
Fig. 7 zeigt eine Ausführungsform eines Rohres 2, das als Injektor 1 eingesetzt werden kann, wobei das Rohr 2 einen Grundkörper mit kreisrundem Querschnitt umfasst, dessen Außenfläche konzentrisch zum Kanal 4 in dem Rohr 2 ausgebildet ist. Im gezeigten Ausführungsbeisspiel stehen vom kreisrunden Grundkörper nach außen Versteifungsrippen 8 ab, sodass ein sternförmiges Profil vorliegt. Die Zahl der Versteifungsrippen 8 muss nicht vier betragen, sondern kann auch zwei (vgl. Fig. 5) oder drei oder mehr als vier sein.
Beim Verwenden eines erfindungsgemäßen Injektors 1 aus Silizium bei Prozessen, bei welchen Behandlungsgas in eine Prozesskammer eingeleitet wird, insbesondere bei der Halbleitertechnik im Zuge des Herstellens von Chips enthaltenden Wafern, ergibt sich -anders als bei bekannten, aus Quarzglas bestehenden Injektoren -nicht mehr das Problem des Entstehens von Partikeln (flakings).
Insbesondere hat sich auch als vorteilhaft herausgestellt, dass beim Verwenden von erfindungsgemäßen Injektoren 1 weniger Verunreinigungen und Partikelbildungen auftreten.
Ein weiterer Vorteil des erfindungsgemäßen Injektors 1 ist dessen verlängerte Einsatzdauer und zusätzlich, dass der Behandlungsprozess sauberer wird.
Durch die äußere Form des Profils des als Injektor 1 verwendeten Rohres 2, die nicht kreisrund ist, wird die Stabilität des Injektors 1 erhöht.
Wie bereits erwähnt und beispielsweise in Fig. 3 gezeigt, können bei Bedarf in dem als Injektor 1 verwendeten Rohr 2 mehrere, beispielsweise zwei, drei oder mehr als drei Kanäle 4 für das Zuführen von Behandlungsgas vorgesehen sein.
Obwohl in den Zeichnungen nicht gezeigt, sind in den erfindungsgemäß als Injektoren 1 eingesetzten Rohren 2 die auch für Injektoren aus Quarzglas üblichen Austrittsöffnungen für das Behandlungsgas (Prozessgas) vorgesehen.
Zusammenfassend kann ein Ausführungsbeispiel der Erfindung wie folgt beschrieben werden:
Vorgeschlagen wird ein Injektor 1, der aus Silizium gefertigt ist und der bei Prozessen, insbesondere Prozessen in der Halbleitertechnik, das Einleiten von Behandlungsgas in Prozesskammern erlaubt. Der Injektor 1 ist als Rohr 2 ausgebildet, in dem Austrittsöffnungen für das in die Prozesskammer einzubringende Behandlungsgas vorgesehen sind. In dem Rohr 2, das als Injektor 1 dient, ist wenigstens ein Gasströmkanal 4 vorgesehen. Das Profil des als Injektor 1 dienenden Rohres ist unrund, weicht also von einem kreisförmigen Profil ab, wobei längliche, dreieckige oder sternförmige Profilformen in Betracht gezogen sind.
Claims (13)
- Patentansprüche:1. Injektor (1) für das Zuführen von Behandlungsgas in eine Prozesskammer, umfassend ein Rohr (2), in dem Austrittsöffnungen für das Behandlungsgas vorgesehen sind, dadurch gekennzeichnet, dass das als Injektor (1) dienende Rohr (2) aus Silizium besteht.
- 2. Injektor nach Anspruch 1, dadurch gekennzeichnet, dass in dem Rohr (2) wenigstens ein Gasströmkanal (4) vorgesehen ist.
- 3. Injektor nach Anspruch 2, dadurch gekennzeichnet, dass im Rohr (2) zwei Gasströmkanäle (4), die zueinander parallel verlaufend angeordnet sind, vorgesehen sind.
- 4. Injektor nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, dass das Profil des als Injektor (1) dienenden Rohres (2) unrund ist.
- 5. Injektor nach Anspruch 4, dadurch gekennzeichnet, dass das Profil des als Injektor (1) dienenden Rohres (2) rechteckig ist.
- 6. Injektor nach Anspruch 5, dadurch gekennzeichnet, dass die Schmalseiten (3) des Rohres (2) konvex gekrümmt sind.
- 7. Injektor nach Anspruch 5 oder 6, dadurch gekennzeichnet, dass die Schmalseiten (3) des Rohres (2) über Krümmungen (5) in die Seitenflächen (6) des Rohres (2) übergehen.
- 8. Injektor nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass das als Injektor (1) dienende Rohr (2) einen Grundkörper aufweist, der ein konzentrisch zum Kanal (4) im Rohr (2) gekrümmtes Profil aufweist, und dass vom Rundkörper wenigstens zwei Rippen (8) abstehen.
- 9. Injektor nach Anspruch 8, dadurch gekennzeichnet, dass die Rippen (8) einander diametral gegenüberliegend vorgesehen sind.
- 10. Injektor nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass genau zwei Rippen (8) vorgesehen sind.
- 11. Injektor nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass drei, vier oder mehr als vier Rippen (8) vorgesehen sind.
- 12. Injektor nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, dass das als Injektor (1) dienende Rohr (2) eine dreieckförmiges Profil aufweist.
- 13. Injektor nach einem der Ansprüche 2 bis 12, dadurch gekennzeichnet, dass der Gasströmkanal (4) eine längliche Querschnittsform aufweist.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATA815/2015A AT518081B1 (de) | 2015-12-22 | 2015-12-22 | Injektor aus Silizium für die Halbleiterindustrie |
| EP16816680.9A EP3394317A1 (de) | 2015-12-22 | 2016-12-19 | Injektor aus silizium für die halbleiterindustrie |
| KR1020187020897A KR20180095073A (ko) | 2015-12-22 | 2016-12-19 | 반도체 산업을 위한 실리콘 인젝터 |
| US16/065,227 US20190055652A1 (en) | 2015-12-22 | 2016-12-19 | Injector of silicon for the semiconductor industry |
| DE212016000248.1U DE212016000248U1 (de) | 2015-12-22 | 2016-12-19 | Injektor aus Silizium für die Halbleiterindustrie |
| KR1020247040020A KR20240172266A (ko) | 2015-12-22 | 2016-12-19 | 반도체 산업을 위한 실리콘 인젝터 |
| JP2018552122A JP2019503086A (ja) | 2015-12-22 | 2016-12-19 | 半導体産業用のシリコンのインジェクター |
| PCT/EP2016/081788 WO2017108714A1 (de) | 2015-12-22 | 2016-12-19 | Injektor aus silizium für die halbleiterindustrie |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ATA815/2015A AT518081B1 (de) | 2015-12-22 | 2015-12-22 | Injektor aus Silizium für die Halbleiterindustrie |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| AT518081A4 true AT518081A4 (de) | 2017-07-15 |
| AT518081B1 AT518081B1 (de) | 2017-07-15 |
Family
ID=57609892
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ATA815/2015A AT518081B1 (de) | 2015-12-22 | 2015-12-22 | Injektor aus Silizium für die Halbleiterindustrie |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20190055652A1 (de) |
| EP (1) | EP3394317A1 (de) |
| JP (1) | JP2019503086A (de) |
| KR (2) | KR20240172266A (de) |
| AT (1) | AT518081B1 (de) |
| DE (1) | DE212016000248U1 (de) |
| WO (1) | WO2017108714A1 (de) |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20240172266A (ko) | 2024-12-09 |
| JP2019503086A (ja) | 2019-01-31 |
| WO2017108714A1 (de) | 2017-06-29 |
| KR20180095073A (ko) | 2018-08-24 |
| EP3394317A1 (de) | 2018-10-31 |
| US20190055652A1 (en) | 2019-02-21 |
| AT518081B1 (de) | 2017-07-15 |
| DE212016000248U1 (de) | 2018-07-31 |
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