AT522305A5 - Wolfram-Sputtering-Target und Verfahren zu seiner Herstellung - Google Patents

Wolfram-Sputtering-Target und Verfahren zu seiner Herstellung Download PDF

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Publication number
AT522305A5
AT522305A5 ATA9286/2018A AT92862018A AT522305A5 AT 522305 A5 AT522305 A5 AT 522305A5 AT 92862018 A AT92862018 A AT 92862018A AT 522305 A5 AT522305 A5 AT 522305A5
Authority
AT
Austria
Prior art keywords
tungsten
sputtering target
manufacture
tungsten sputtering
impurity
Prior art date
Application number
ATA9286/2018A
Other languages
English (en)
Other versions
AT522305A2 (de
AT522305B1 (de
Inventor
Sogawa Shinji
Dasai Takafumi
Nakasumi Seiji
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of AT522305A2 publication Critical patent/AT522305A2/de
Publication of AT522305A5 publication Critical patent/AT522305A5/de
Application granted granted Critical
Publication of AT522305B1 publication Critical patent/AT522305B1/de

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/18—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by using pressure rollers
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/045—Alloys based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

Ein Wolfram-Sputtering-Target wird vorgesehen, das in der Lage ist, einen Wolframfilm mit einem geringen spezifischen Widerstand zu bilden, wenn der Wolframfilm unter Verwendung des Wolfram-Sputtering-Targets gebildet wird. Ein Wolfram-Sputtering-Target, wobei eine Reinheit von Wolfram 5 N (99,999 Gew.-%) oder mehr beträgt, und eine Verunreinigung von Kohlenstoff und eine Verunreinigung von Sauerstoff, die im Wolfram enthalten sind, jeweils 50 ppm, bezogen auf das Gewicht, oder weniger betragen, und eine mittlere Wolframkristall-Korngröße mehr als 100 μm beträgt.
ATA9286/2018A 2017-11-10 2018-09-07 Wolfram-Sputtering-Target und Verfahren zu seiner Herstellung AT522305B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017217737A JP7308013B2 (ja) 2017-11-10 2017-11-10 タングステンスパッタリングターゲット及びその製造方法
PCT/JP2018/033273 WO2019092969A1 (ja) 2017-11-10 2018-09-07 タングステンスパッタリングターゲット及びその製造方法

Publications (3)

Publication Number Publication Date
AT522305A2 AT522305A2 (de) 2020-10-15
AT522305A5 true AT522305A5 (de) 2021-10-15
AT522305B1 AT522305B1 (de) 2022-10-15

Family

ID=66438287

Family Applications (1)

Application Number Title Priority Date Filing Date
ATA9286/2018A AT522305B1 (de) 2017-11-10 2018-09-07 Wolfram-Sputtering-Target und Verfahren zu seiner Herstellung

Country Status (4)

Country Link
US (1) US11939661B2 (de)
JP (3) JP7308013B2 (de)
AT (1) AT522305B1 (de)
WO (1) WO2019092969A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113088899B (zh) * 2021-03-19 2023-04-18 有研亿金新材料有限公司 一种高纯低氧钨硅合金靶材的制备方法
CN113981389B (zh) * 2021-10-25 2023-03-14 北京安泰六九新材料科技有限公司 一种复合靶材及其制造方法
JP7278463B1 (ja) 2022-06-27 2023-05-19 株式会社アルバック タングステンターゲットおよびその製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776771A (ja) * 1993-09-08 1995-03-20 Japan Energy Corp タングステンスパッタリングターゲット
US20150023837A1 (en) * 2012-03-02 2015-01-22 Jx Nippon Mining & Metals Corporation Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Same Target
EP2907891A1 (de) * 2013-03-22 2015-08-19 JX Nippon Mining & Metals Corp. Wolfram-sinterkörper-sputtertarget und verfahren zur herstellung davon

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2757287B2 (ja) * 1989-11-02 1998-05-25 日立金属株式会社 タングステンターゲットの製造方法
JPH0593267A (ja) 1991-10-01 1993-04-16 Hitachi Metals Ltd 半導体用タングステンターゲツトおよびその製造方法
JP3280054B2 (ja) * 1992-02-10 2002-04-30 日立金属株式会社 半導体用タングステンターゲットの製造方法
JP2646058B2 (ja) * 1993-01-29 1997-08-25 東京タングステン株式会社 スパッターターゲット材及びその製造方法
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JP2001298036A (ja) * 2000-02-08 2001-10-26 Toshiba Corp バンプ高さ測定方法、バンプ位置測定方法およびバンプ高さ測定装置、バンプ位置測定装置ならびに半導体装置の製造方法、半導体装置の実装方法
JP4634567B2 (ja) * 2000-04-17 2011-02-16 株式会社東芝 タングステンスパッタリングターゲットの製造方法
JP2003055758A (ja) 2001-08-10 2003-02-26 Nikko Materials Co Ltd スッパタリング用タングステン焼結体ターゲット及びその製造方法
JP3998972B2 (ja) * 2001-12-27 2007-10-31 新日鉄マテリアルズ株式会社 スパッタリング用タングステンターゲットの製造方法
JP2003226964A (ja) 2002-02-05 2003-08-15 Nippon Steel Corp スパッタリング用タングステンターゲットの製造方法
WO2006001976A2 (en) * 2004-06-15 2006-01-05 Tosoh Smd, Inc. High purity target manufacturing methods
KR20160085907A (ko) * 2012-08-22 2016-07-18 제이엑스금속주식회사 인듐제 원통형 스퍼터링 타깃 및 그 제조 방법
TW201730360A (zh) 2015-10-27 2017-09-01 塔沙Ｓｍｄ公司 具有改良特性之低電阻率鎢膜及鎢靶材

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0776771A (ja) * 1993-09-08 1995-03-20 Japan Energy Corp タングステンスパッタリングターゲット
US20150023837A1 (en) * 2012-03-02 2015-01-22 Jx Nippon Mining & Metals Corporation Tungsten Sintered Compact Sputtering Target and Tungsten Film Formed Using Same Target
EP2907891A1 (de) * 2013-03-22 2015-08-19 JX Nippon Mining & Metals Corp. Wolfram-sinterkörper-sputtertarget und verfahren zur herstellung davon

Also Published As

Publication number Publication date
JP2024087083A (ja) 2024-06-28
JP2023076733A (ja) 2023-06-01
US20200370167A1 (en) 2020-11-26
AT522305A2 (de) 2020-10-15
JP7308013B2 (ja) 2023-07-13
JP7701511B2 (ja) 2025-07-01
AT522305B1 (de) 2022-10-15
WO2019092969A1 (ja) 2019-05-16
JP2019090071A (ja) 2019-06-13
US11939661B2 (en) 2024-03-26

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REJO Opposition accepted [patent revoked]

Effective date: 20251001