ATA119098A - Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat - Google Patents

Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat

Info

Publication number
ATA119098A
ATA119098A AT0119098A AT119098A ATA119098A AT A119098 A ATA119098 A AT A119098A AT 0119098 A AT0119098 A AT 0119098A AT 119098 A AT119098 A AT 119098A AT A119098 A ATA119098 A AT A119098A
Authority
AT
Austria
Prior art keywords
producing
substrate
carbon film
carbon
film
Prior art date
Application number
AT0119098A
Other languages
English (en)
Inventor
Hans Dr Loeschner
Ivaylo W Rangelow
Pavol Dipl Ing Dr Hrkut
Peter Dipl Ing Dr Hudek
Original Assignee
Ims Ionen Mikrofab Syst
Univ Gesamthochschule Kassel
Ustav Pocitacovych Systemov Sl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ims Ionen Mikrofab Syst, Univ Gesamthochschule Kassel, Ustav Pocitacovych Systemov Sl filed Critical Ims Ionen Mikrofab Syst
Priority to AT0119098A priority Critical patent/ATA119098A/de
Publication of ATA119098A publication Critical patent/ATA119098A/de
Priority to DE19930133A priority patent/DE19930133A1/de
Priority to US09/349,936 priority patent/US6136160A/en
Priority to JP11194696A priority patent/JP2000073166A/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605—Carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physical Vapour Deposition (AREA)
AT0119098A 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat ATA119098A (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT0119098A ATA119098A (de) 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat
DE19930133A DE19930133A1 (de) 1998-07-09 1999-06-30 Verfahren zur Erzeugung eines Kohlenstoffilmes auf einem Substrat
US09/349,936 US6136160A (en) 1998-07-09 1999-07-08 Process for producing a carbon film on a substrate
JP11194696A JP2000073166A (ja) 1998-07-09 1999-07-08 基板上への炭素皮膜の生成方法及びそれによって得られた炭素皮膜を有する基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0119098A ATA119098A (de) 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat

Publications (1)

Publication Number Publication Date
ATA119098A true ATA119098A (de) 1999-05-15

Family

ID=3508564

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0119098A ATA119098A (de) 1998-07-09 1998-07-09 Verfahren zur erzeugung eines kohlenstoffilmes auf einem substrat

Country Status (4)

Country Link
US (1) US6136160A (de)
JP (1) JP2000073166A (de)
AT (1) ATA119098A (de)
DE (1) DE19930133A1 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10118200A1 (de) * 2001-04-11 2002-10-24 Infineon Technologies Ag Gas-Sensorelement, Verfahren zum Herstellen eines Gas-Sensorelements und Verfahren zur Detektion von Gasen
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
GB2399676B (en) * 2003-03-21 2006-02-22 Ims Ionen Mikrofab Syst Apparatus for enhancing the lifetime of stencil masks
US7294877B2 (en) 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
EP1631812A4 (de) 2003-05-14 2010-12-01 Nantero Inc Sensorplattform mit einem horizontal ausgerichteten nanoröhrchenelement
US7280394B2 (en) 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
US7989067B2 (en) * 2003-06-12 2011-08-02 Georgia Tech Research Corporation Incorporation of functionalizing molecules in nanopatterned epitaxial graphene electronics
WO2005001895A2 (en) * 2003-06-12 2005-01-06 Georgia Technology Research Corporation Patterned thin film graphite devices and method for making same
WO2005048296A2 (en) 2003-08-13 2005-05-26 Nantero, Inc. Nanotube-based switching elements with multiple controls and circuits made from same
US7132201B2 (en) * 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
US7129180B2 (en) * 2003-09-12 2006-10-31 Micron Technology, Inc. Masking structure having multiple layers including an amorphous carbon layer
US7528437B2 (en) * 2004-02-11 2009-05-05 Nantero, Inc. EEPROMS using carbon nanotubes for cell storage
US7652342B2 (en) 2004-06-18 2010-01-26 Nantero, Inc. Nanotube-based transfer devices and related circuits
US7164744B2 (en) 2004-06-18 2007-01-16 Nantero, Inc. Nanotube-based logic driver circuits
US7161403B2 (en) 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
WO2006121461A2 (en) 2004-09-16 2006-11-16 Nantero, Inc. Light emitters using nanotubes and methods of making same
US7479654B2 (en) 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
JP5464753B2 (ja) * 2007-12-06 2014-04-09 インテバック・インコーポレイテッド 基板を両面スパッタエッチングするシステム及び方法
US8460764B2 (en) * 2008-03-06 2013-06-11 Georgia Tech Research Corporation Method and apparatus for producing ultra-thin graphitic layers
US20090236608A1 (en) * 2008-03-18 2009-09-24 Georgia Tech Research Corporation Method for Producing Graphitic Patterns on Silicon Carbide
US8497499B2 (en) * 2009-10-12 2013-07-30 Georgia Tech Research Corporation Method to modify the conductivity of graphene
US9171907B2 (en) 2011-09-27 2015-10-27 Georgia Tech Research Corporation Graphene transistor
US9627790B2 (en) 2012-10-04 2017-04-18 Fci Americas Technology Llc Electrical contact including corrosion-resistant coating
JP6472016B2 (ja) * 2014-09-25 2019-02-20 国立研究開発法人産業技術総合研究所 炭化珪素半導体装置の製造方法
CN113088913B (zh) * 2021-04-13 2022-03-29 安徽工程大学 一种碳纤维改性方法及其产品

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991006948A1 (fr) * 1989-10-27 1991-05-16 Kabushiki Kaisha Kobe Seiko Sho Procede de production d'un support d'enregistrement magnetique
US5232570A (en) * 1991-06-28 1993-08-03 Digital Equipment Corporation Nitrogen-containing materials for wear protection and friction reduction
JPH06145975A (ja) * 1992-03-20 1994-05-27 Komag Inc 炭素フィルムをスパタリングする方法及びその製造物
US5573864A (en) * 1994-10-25 1996-11-12 The United States Of America As Represented By The Secretary Of Commerce Transparent carbon nitride films and compositions of matter comprising transparent carbon nitride films
FR2726579A1 (fr) * 1994-11-07 1996-05-10 Neuville Stephane Procede de depot d'un revetement protecteur de type pseudo carbonne diamant amorphe

Also Published As

Publication number Publication date
US6136160A (en) 2000-10-24
DE19930133A1 (de) 2000-01-13
JP2000073166A (ja) 2000-03-07

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A1J Withdrawal paragraph 166 lit. 6