ATA18422001A - Silizium-kontaktmasse zur ionenimplantation - Google Patents

Silizium-kontaktmasse zur ionenimplantation

Info

Publication number
ATA18422001A
ATA18422001A AT0184201A AT18422001A ATA18422001A AT A18422001 A ATA18422001 A AT A18422001A AT 0184201 A AT0184201 A AT 0184201A AT 18422001 A AT18422001 A AT 18422001A AT A18422001 A ATA18422001 A AT A18422001A
Authority
AT
Austria
Prior art keywords
ion implantation
silicon contacts
contacts
silicon
implantation
Prior art date
Application number
AT0184201A
Other languages
English (en)
Other versions
AT410450B (de
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of ATA18422001A publication Critical patent/ATA18422001A/de
Application granted granted Critical
Publication of AT410450B publication Critical patent/AT410450B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
AT0184201A 2000-12-13 2001-11-23 Silizium-kontaktmaske zur ionenimplantation AT410450B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10062016A DE10062016C2 (de) 2000-12-13 2000-12-13 Silizium-Kontaktmaske zur Ionenimplantation, Verwendung einer solchen Kontaktmaske, Verfahren zur Herstellung einer solchen Kontaktmaske, Verwendung eines derartigen Herstellungsverfahrens und Verfahren zur Herstellung eines Wafers mit einer solchen Maske

Publications (2)

Publication Number Publication Date
ATA18422001A true ATA18422001A (de) 2002-09-15
AT410450B AT410450B (de) 2003-04-25

Family

ID=7666931

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0184201A AT410450B (de) 2000-12-13 2001-11-23 Silizium-kontaktmaske zur ionenimplantation

Country Status (2)

Country Link
AT (1) AT410450B (de)
DE (1) DE10062016C2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114695094B (zh) * 2020-12-29 2025-07-25 芯恩（青岛）集成电路有限公司 一种抑制wpe的阱离子注入方法
CN114695093B (zh) * 2020-12-29 2025-07-11 芯恩（青岛）集成电路有限公司 一种阱离子注入方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0078336B1 (de) * 1981-10-30 1988-02-03 Ibm Deutschland Gmbh Schattenwurfmaske für die Ionenimplantation und die Ionenstrahllithographie
JPH10260523A (ja) * 1997-03-18 1998-09-29 Nikon Corp シリコンステンシルマスクの製造方法

Also Published As

Publication number Publication date
DE10062016C2 (de) 2002-10-24
AT410450B (de) 2003-04-25
DE10062016A1 (de) 2002-06-27

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Legal Events

Date Code Title Description
MM01 Lapse because of not paying annual fees

Effective date: 20160915