ATA219599A - Verfahren zum züchten von einkristallen - Google Patents

Verfahren zum züchten von einkristallen

Info

Publication number
ATA219599A
ATA219599A AT0219599A AT219599A ATA219599A AT A219599 A ATA219599 A AT A219599A AT 0219599 A AT0219599 A AT 0219599A AT 219599 A AT219599 A AT 219599A AT A219599 A ATA219599 A AT A219599A
Authority
AT
Austria
Prior art keywords
single crystals
growing single
growing
crystals
Prior art date
Application number
AT0219599A
Other languages
English (en)
Other versions
AT408456B (de
Inventor
Peter Walter Dr Krempl
Wolfgang Mag Dr Wallnoefer
Ferdinand Mag Krispel
Herbert Mag Thanner
Original Assignee
Avl List Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Avl List Gmbh filed Critical Avl List Gmbh
Priority to AT0219599A priority Critical patent/AT408456B/de
Priority to RU2000129639/12A priority patent/RU2194100C2/ru
Priority to DE10060575A priority patent/DE10060575C2/de
Priority to FR0016890A priority patent/FR2802948B1/fr
Priority to US09/748,213 priority patent/US6491753B2/en
Priority to CNB001377868A priority patent/CN1246505C/zh
Publication of ATA219599A publication Critical patent/ATA219599A/de
Application granted granted Critical
Publication of AT408456B publication Critical patent/AT408456B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/14—Phosphates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT0219599A 1999-12-28 1999-12-28 Verfahren zum züchten von einkristallen AT408456B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
AT0219599A AT408456B (de) 1999-12-28 1999-12-28 Verfahren zum züchten von einkristallen
RU2000129639/12A RU2194100C2 (ru) 1999-12-28 2000-11-28 Способ выращивания монокристаллов
DE10060575A DE10060575C2 (de) 1999-12-28 2000-12-06 Verfahren zum Züchten von Einkristallen
FR0016890A FR2802948B1 (fr) 1999-12-28 2000-12-22 Procede de croissance de monocristaux d'orthophosphates metalliques
US09/748,213 US6491753B2 (en) 1999-12-28 2000-12-27 Method for the growing of single crystals
CNB001377868A CN1246505C (zh) 1999-12-28 2000-12-28 单晶的培养方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0219599A AT408456B (de) 1999-12-28 1999-12-28 Verfahren zum züchten von einkristallen

Publications (2)

Publication Number Publication Date
ATA219599A true ATA219599A (de) 2001-04-15
AT408456B AT408456B (de) 2001-12-27

Family

ID=3529757

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0219599A AT408456B (de) 1999-12-28 1999-12-28 Verfahren zum züchten von einkristallen

Country Status (6)

Country Link
US (1) US6491753B2 (de)
CN (1) CN1246505C (de)
AT (1) AT408456B (de)
DE (1) DE10060575C2 (de)
FR (1) FR2802948B1 (de)
RU (1) RU2194100C2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4249502B2 (ja) * 2003-02-04 2009-04-02 日本電波工業株式会社 圧電結晶材料及び圧電振動子
US6979938B2 (en) * 2003-06-18 2005-12-27 Xerox Corporation Electronic device formed from a thin film with vertically oriented columns with an insulating filler material
US7288125B1 (en) 2004-11-03 2007-10-30 Ron Williams Crystal growing kit and method
CN100350081C (zh) * 2005-10-08 2007-11-21 山东大学 磷酸镓晶体的助熔剂生长法
CN100363253C (zh) * 2006-06-26 2008-01-23 山东大学 一种助熔剂生长磷酸铝晶体的方法
CN100494513C (zh) * 2007-08-07 2009-06-03 山东大学 磷酸三镓晶体的助熔剂生长法
KR20120036816A (ko) * 2009-06-01 2012-04-18 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 결정 및 그 제조 방법
EP2633103B1 (de) * 2010-10-29 2015-07-29 The Regents of The University of California Ammonothermale züchtung von gruppe-iii-nitrid-kristallen auf keimen mit mindestens zwei flächen in einem spitzen, rechten oder stumpfen winkel zueinander
CN105967162B (zh) * 2016-07-19 2017-11-28 株洲科能新材料有限责任公司 一种微米级球形磷酸镓的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4381214A (en) * 1980-06-26 1983-04-26 The General Electric Company Limited Process for growing crystals
US4559208A (en) * 1981-01-30 1985-12-17 Allied Corporation Hydrothermal crystal growing apparatus
US4578146A (en) * 1983-04-28 1986-03-25 Allied Corporation Process for growing a large single crystal from multiple seed crystals
FR2676753B1 (fr) * 1991-05-24 1993-10-01 France Telecom Procede d'accroissement des dimensions des cristaux elaborables par croissance hydrothermale, utilisant un germe obtenu par assemblage de lames cristallines.
RU2019583C1 (ru) * 1992-02-11 1994-09-15 Институт кристаллографии им.А.В.Шубникова РАН Способ получения монокристаллов ортофосфата галлия
AT398255B (de) * 1992-09-04 1994-11-25 Avl Verbrennungskraft Messtech Hydrothermalzuchtverfahren zum züchten von grossen kristallen oder kristallschichten aus einem metallorthophosphat unter verwendung einer keimplatte

Also Published As

Publication number Publication date
US20010007238A1 (en) 2001-07-12
FR2802948A1 (fr) 2001-06-29
RU2194100C2 (ru) 2002-12-10
FR2802948B1 (fr) 2004-02-27
CN1246505C (zh) 2006-03-22
AT408456B (de) 2001-12-27
DE10060575A1 (de) 2001-07-19
DE10060575C2 (de) 2003-10-16
CN1311355A (zh) 2001-09-05
US6491753B2 (en) 2002-12-10

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties
ELJ Ceased due to non-payment of the annual fee