ATA86197A - Ein-elektron speicherbauelement - Google Patents

Ein-elektron speicherbauelement

Info

Publication number
ATA86197A
ATA86197A AT0086197A AT86197A ATA86197A AT A86197 A ATA86197 A AT A86197A AT 0086197 A AT0086197 A AT 0086197A AT 86197 A AT86197 A AT 86197A AT A86197 A ATA86197 A AT A86197A
Authority
AT
Austria
Prior art keywords
memory component
electron memory
electron
component
memory
Prior art date
Application number
AT0086197A
Other languages
English (en)
Other versions
AT405109B (de
Original Assignee
Wasshuber Christoph Dipl Ing D
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wasshuber Christoph Dipl Ing D filed Critical Wasshuber Christoph Dipl Ing D
Priority to AT0086197A priority Critical patent/AT405109B/de
Priority to AU70122/98A priority patent/AU7012298A/en
Priority to PCT/AT1998/000105 priority patent/WO1998053504A1/de
Publication of ATA86197A publication Critical patent/ATA86197A/de
Application granted granted Critical
Publication of AT405109B publication Critical patent/AT405109B/de
Priority to US09/444,243 priority patent/US6487112B1/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/688—Floating-gate IGFETs programmed by two single electrons
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
AT0086197A 1997-05-21 1997-05-21 Ein-elektron speicherbauelement AT405109B (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT0086197A AT405109B (de) 1997-05-21 1997-05-21 Ein-elektron speicherbauelement
AU70122/98A AU7012298A (en) 1997-05-21 1998-04-22 Single-electron memory component
PCT/AT1998/000105 WO1998053504A1 (de) 1997-05-21 1998-04-22 Ein-elektron-speicherbauelement
US09/444,243 US6487112B1 (en) 1997-05-21 1999-11-19 Single-electron memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AT0086197A AT405109B (de) 1997-05-21 1997-05-21 Ein-elektron speicherbauelement

Publications (2)

Publication Number Publication Date
ATA86197A true ATA86197A (de) 1998-09-15
AT405109B AT405109B (de) 1999-05-25

Family

ID=3501507

Family Applications (1)

Application Number Title Priority Date Filing Date
AT0086197A AT405109B (de) 1997-05-21 1997-05-21 Ein-elektron speicherbauelement

Country Status (4)

Country Link
US (1) US6487112B1 (de)
AT (1) AT405109B (de)
AU (1) AU7012298A (de)
WO (1) WO1998053504A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT405109B (de) 1997-05-21 1999-05-25 Wasshuber Christoph Dipl Ing D Ein-elektron speicherbauelement
EP1170799A3 (de) * 2000-07-04 2009-04-01 Infineon Technologies AG Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements
JP4049988B2 (ja) * 2000-11-24 2008-02-20 株式会社東芝 論理回路
TW531890B (en) * 2002-02-27 2003-05-11 Ind Tech Res Inst Single electron device fabricated from nanoparticle derivatives
JP3974429B2 (ja) * 2002-02-28 2007-09-12 株式会社東芝 乱数発生素子
US7122413B2 (en) 2003-12-19 2006-10-17 Texas Instruments Incorporated Method to manufacture silicon quantum islands and single-electron devices
US7773404B2 (en) * 2005-01-07 2010-08-10 Invisage Technologies, Inc. Quantum dot optical devices with enhanced gain and sensitivity and methods of making same
US7742322B2 (en) * 2005-01-07 2010-06-22 Invisage Technologies, Inc. Electronic and optoelectronic devices with quantum dot films
US7746681B2 (en) * 2005-01-07 2010-06-29 Invisage Technologies, Inc. Methods of making quantum dot films
CA2519608A1 (en) 2005-01-07 2006-07-07 Edward Sargent Quantum dot-polymer nanocomposite photodetectors and photovoltaics
US7585721B2 (en) * 2005-05-09 2009-09-08 The Hong Kong Polytechnic University Process and apparatus for fabricating nano-floating gate memories and memory made thereby
US7601946B2 (en) 2006-09-12 2009-10-13 Ravenbrick, Llc Electromagnetic sensor incorporating quantum confinement structures
DK2106560T3 (en) 2007-01-24 2017-08-07 Ravenbrick Llc THERMAL REPLACED OPTICAL DOWN CONVERTER FILTER
US8363307B2 (en) 2007-02-28 2013-01-29 Ravenbrick, Llc Multicolor light emitting device incorporating tunable quantum confinement devices
US7936500B2 (en) 2007-03-02 2011-05-03 Ravenbrick Llc Wavelength-specific optical switch
KR101324196B1 (ko) * 2007-06-05 2013-11-06 삼성전자주식회사 커패시터리스 디램 및 그의 제조방법
AU2008274933B2 (en) 2007-07-11 2012-03-08 Ravenbrick, Llc Thermally switched reflective optical shutter
JP5568013B2 (ja) 2007-09-19 2014-08-06 レイブンブリック，エルエルシー ナノスケールのワイヤグリッドを組み込んだ窓用低放射膜
US8169685B2 (en) 2007-12-20 2012-05-01 Ravenbrick, Llc Thermally switched absorptive window shutter
JP5671449B2 (ja) 2008-04-23 2015-02-18 レイブンブリック，エルエルシー 反射性表面およびサーモリフレクティブ表面についてのグレアを調整する方法および装置
US9116302B2 (en) 2008-06-19 2015-08-25 Ravenbrick Llc Optical metapolarizer device
WO2010022294A2 (en) 2008-08-20 2010-02-25 Ravenbrick, Llc Methods for fabricating thermochromic filters
US8581317B2 (en) * 2008-08-27 2013-11-12 Texas Instruments Incorporated SOI MuGFETs having single gate electrode level
CN102460238A (zh) 2009-04-10 2012-05-16 雷文布里克有限责任公司 结合有宾主型结构的热切换滤光器
US8947760B2 (en) 2009-04-23 2015-02-03 Ravenbrick Llc Thermotropic optical shutter incorporating coatable polarizers
WO2011053853A2 (en) * 2009-10-30 2011-05-05 Ravenbrick Llc Thermochromic filters and stopband filters for use with same
WO2011062708A2 (en) 2009-11-17 2011-05-26 Ravenbrick Llc Thermally switched optical filter incorporating a refractive optical structure
JP5890390B2 (ja) 2010-03-29 2016-03-22 レイブンブリック，エルエルシー ポリマ安定化型サーモトロピック液晶デバイス
EP2576934A4 (de) 2010-06-01 2014-01-01 Ravenbrick Llc Multifunktionelles konstruktionsteil
TWI539453B (zh) * 2010-09-14 2016-06-21 半導體能源研究所股份有限公司 記憶體裝置和半導體裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958318A (en) * 1988-07-08 1990-09-18 Eliyahou Harari Sidewall capacitor DRAM cell
GB9226382D0 (en) * 1992-12-18 1993-02-10 Hitachi Europ Ltd Memory device
JP3156878B2 (ja) * 1992-04-30 2001-04-16 株式会社東芝 半導体装置およびその製造方法
JP3613594B2 (ja) * 1993-08-19 2005-01-26 株式会社ルネサステクノロジ 半導体素子およびこれを用いた半導体記憶装置
JPH0936317A (ja) * 1995-07-17 1997-02-07 Matsushita Electric Ind Co Ltd メモリ素子およびその製造方法
US6060723A (en) * 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
AT405109B (de) 1997-05-21 1999-05-25 Wasshuber Christoph Dipl Ing D Ein-elektron speicherbauelement

Also Published As

Publication number Publication date
AU7012298A (en) 1998-12-11
US6487112B1 (en) 2002-11-26
WO1998053504A1 (de) 1998-11-26
AT405109B (de) 1999-05-25

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee