ATA86897A - Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt - Google Patents

Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Info

Publication number: ATA86897A
Authority: AT; Austria
Prior art keywords: injection; field effect; effect transistor; source contact; limiting source
Prior art date: 1997-05-22

Application number

AT86897A

Other languages

English (en)

Other versions

AT407451B (de

Inventor

Hartwig Dipl Ing Dr Thim

Kurt Dipl Ing Dr Luebke

Original Assignee

Hartwig Dipl Ing Dr Thim

Kurt Dipl Ing Dr Luebke

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-05-22

Filing date

1997-05-22

Publication date

2000-07-15

1997-05-22 Application filed by Hartwig Dipl Ing Dr Thim, Kurt Dipl Ing Dr Luebke filed Critical Hartwig Dipl Ing Dr Thim

1997-05-22 Priority to AT86897A priority Critical patent/AT407451B/de

2000-07-15 Publication of ATA86897A publication Critical patent/ATA86897A/de

2001-03-26 Application granted granted Critical

2001-03-26 Publication of AT407451B publication Critical patent/AT407451B/de

Links

230000005669 field effect Effects 0.000 title 1

AT86897A 1997-05-22 1997-05-22 Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt AT407451B (de)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
AT86897A AT407451B (de)	1997-05-22	1997-05-22	Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
AT86897A AT407451B (de)	1997-05-22	1997-05-22	Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Publications (2)

Publication Number	Publication Date
ATA86897A true ATA86897A (de)	2000-07-15
AT407451B AT407451B (de)	2001-03-26

Family

ID=3501666

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AT86897A AT407451B (de)	1997-05-22	1997-05-22	Feldeffekttransistor mit injektionsbegrenzendem sourcekontakt

Country Status (1)

Country	Link
AT (1)	AT407451B (de)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3740666A (en) *	1970-12-16	1973-06-19	H Thim	Circuit for suppressing the formation of high field domains in an overcritically doped gunn-effect diode
JPH0496374A (ja) *	1990-08-14	1992-03-27	Fujitsu Ltd	半導体装置
JPH0496375A (ja) *	1990-08-14	1992-03-27	Fujitsu Ltd	半導体装置
JP2731089B2 (ja) *	1991-10-02	1998-03-25	三菱電機株式会社	高速動作半導体装置およびその製造方法
US5179037A (en) *	1991-12-24	1993-01-12	Texas Instruments Incorporated	Integration of lateral and vertical quantum well transistors in the same epitaxial stack

1997
- 1997-05-22 AT AT86897A patent/AT407451B/de not_active IP Right Cessation

Also Published As

Publication number	Publication date
AT407451B (de)	2001-03-26

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Legal Events

Date	Code	Title	Description
2004-03-15	ELJ	Ceased due to non-payment of the annual fee