ATE111635T1 - Ionen-implantationsgerät, in dem das elektrische aufladen von substraten vermieden wird. - Google Patents

Ionen-implantationsgerät, in dem das elektrische aufladen von substraten vermieden wird.

Info

Publication number
ATE111635T1
ATE111635T1 AT90108670T AT90108670T ATE111635T1 AT E111635 T1 ATE111635 T1 AT E111635T1 AT 90108670 T AT90108670 T AT 90108670T AT 90108670 T AT90108670 T AT 90108670T AT E111635 T1 ATE111635 T1 AT E111635T1
Authority
AT
Austria
Prior art keywords
tube section
wafer
tube
ion implantation
section
Prior art date
Application number
AT90108670T
Other languages
English (en)
Inventor
Tadamoto Tamai
Junichi Murakami
Original Assignee
Sumitomo Eaton Nova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1114097A external-priority patent/JP2762298B2/ja
Priority claimed from JP1124518A external-priority patent/JP2762299B2/ja
Application filed by Sumitomo Eaton Nova filed Critical Sumitomo Eaton Nova
Application granted granted Critical
Publication of ATE111635T1 publication Critical patent/ATE111635T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Electrostatic Charge, Transfer And Separation In Electrography (AREA)
  • Charge And Discharge Circuits For Batteries Or The Like (AREA)
AT90108670T 1989-05-09 1990-05-08 Ionen-implantationsgerät, in dem das elektrische aufladen von substraten vermieden wird. ATE111635T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1114097A JP2762298B2 (ja) 1989-05-09 1989-05-09 イオン注入装置の帯電抑制装置
JP1124518A JP2762299B2 (ja) 1989-05-19 1989-05-19 イオン注入装置の帯電抑制装置

Publications (1)

Publication Number Publication Date
ATE111635T1 true ATE111635T1 (de) 1994-09-15

Family

ID=26452937

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90108670T ATE111635T1 (de) 1989-05-09 1990-05-08 Ionen-implantationsgerät, in dem das elektrische aufladen von substraten vermieden wird.

Country Status (4)

Country Link
US (1) US4994674A (de)
EP (1) EP0397120B1 (de)
AT (1) ATE111635T1 (de)
DE (1) DE69012414T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07120516B2 (ja) * 1990-07-26 1995-12-20 株式会社東芝 低エネルギ−電子の照射方法および照射装置
US5113074A (en) * 1991-01-29 1992-05-12 Eaton Corporation Ion beam potential detection probe
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer
US5691537A (en) * 1996-01-22 1997-11-25 Chen; John Method and apparatus for ion beam transport
US5856674A (en) * 1997-09-16 1999-01-05 Eaton Corporation Filament for ion implanter plasma shower
WO2001029872A1 (en) * 1999-10-15 2001-04-26 Philips Electron Optics B.V. Particle optical apparatus
US6331227B1 (en) 1999-12-14 2001-12-18 Epion Corporation Enhanced etching/smoothing of dielectric surfaces
GB2440414B (en) * 2006-07-12 2010-10-27 Applied Materials Inc An ion beam guide tube

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62103951A (ja) * 1985-10-29 1987-05-14 Toshiba Corp イオン注入装置
JPS6410563A (en) * 1987-07-02 1989-01-13 Sumitomo Eaton Nova Electric charging suppressor of ion implanter

Also Published As

Publication number Publication date
DE69012414D1 (de) 1994-10-20
US4994674A (en) 1991-02-19
EP0397120A3 (de) 1991-05-15
EP0397120B1 (de) 1994-09-14
DE69012414T2 (de) 1995-02-16
EP0397120A2 (de) 1990-11-14

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties