ATE112417T1 - Photoempfindliches halbleiterbauelement. - Google Patents

Photoempfindliches halbleiterbauelement.

Info

Publication number
ATE112417T1
ATE112417T1 AT89100502T AT89100502T ATE112417T1 AT E112417 T1 ATE112417 T1 AT E112417T1 AT 89100502 T AT89100502 T AT 89100502T AT 89100502 T AT89100502 T AT 89100502T AT E112417 T1 ATE112417 T1 AT E112417T1
Authority
AT
Austria
Prior art keywords
light
sensible semiconductor
semiconductor device
distance
photosensitive semiconductor
Prior art date
Application number
AT89100502T
Other languages
English (en)
Inventor
Eiichi Yoshida
Tomoyoshi Zenki
Satoru Murakami
Minori Yamaguchi
Takehisa Nakayama
Yoshihisa Tawada
Original Assignee
Kanegafuchi Chemical Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Ind filed Critical Kanegafuchi Chemical Ind
Application granted granted Critical
Publication of ATE112417T1 publication Critical patent/ATE112417T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/205—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive semiconductor devices have no potential barriers, e.g. photoresistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Hybrid Cells (AREA)
  • Electronic Switches (AREA)
AT89100502T 1988-01-12 1989-01-12 Photoempfindliches halbleiterbauelement. ATE112417T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63005481A JPH01181577A (ja) 1988-01-12 1988-01-12 光半導体素子

Publications (1)

Publication Number Publication Date
ATE112417T1 true ATE112417T1 (de) 1994-10-15

Family

ID=11612436

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89100502T ATE112417T1 (de) 1988-01-12 1989-01-12 Photoempfindliches halbleiterbauelement.

Country Status (5)

Country Link
US (1) US5128736A (de)
EP (1) EP0324484B1 (de)
JP (1) JPH01181577A (de)
AT (1) ATE112417T1 (de)
DE (1) DE68918467T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655497A1 (fr) * 1989-12-01 1991-06-07 Telecommunications Sa Systeme de transmission de messages.
JPH076788B2 (ja) * 1990-03-02 1995-01-30 株式会社ミツトヨ 太陽電池付き携帯型測定器
US5928437A (en) * 1995-02-09 1999-07-27 The Boeing Company Microarray for efficient energy generation for satellites
GB9524483D0 (en) * 1995-11-30 1996-01-31 Philips Electronics Nv Light sensing array device and apparatus incorporating such
US5990994A (en) * 1997-10-30 1999-11-23 Eastman Kodak Company First and second light sensitive conductive layers for use in image displays
JP2002507835A (ja) * 1998-03-13 2002-03-12 ケラー・シュテフェン 太陽電池装置
US6633058B1 (en) 1999-07-26 2003-10-14 Dalsa, Inc. Variable reticulation time delay and integrate sensor
DE19954259B4 (de) * 1999-11-11 2005-09-15 Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg Dünnschicht-Photovoltaikmodul mit integrierter Flachantennenstruktur
EP2015371A1 (de) * 2007-07-09 2009-01-14 British Telecommunications Public Limited Company Umwandlung optischer Energie
JP4411338B2 (ja) * 2007-07-13 2010-02-10 シャープ株式会社 薄膜太陽電池モジュール
GB0807211D0 (en) * 2008-04-21 2008-05-28 Univ Denmark Tech Dtu Photvolotaic device
JP6326871B2 (ja) * 2014-03-06 2018-05-23 セイコーエプソン株式会社 発電装置、時計および発電装置の製造方法
JP2016086098A (ja) * 2014-10-27 2016-05-19 パナソニックＩｐマネジメント株式会社 光結合装置
CN104733549B (zh) * 2015-03-25 2017-04-12 江苏武进汉能光伏有限公司 一种提高薄膜太阳能电池功率的方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US4268843A (en) * 1979-02-21 1981-05-19 General Electric Company Solid state relay
JPS5678180A (en) * 1979-11-30 1981-06-26 Hitachi Ltd Light receiving device
US4366377A (en) * 1980-09-29 1982-12-28 Mcdonnell Douglas Corporation Dual sensitivity optical sensor
JPS57184937A (en) * 1981-05-08 1982-11-13 Omron Tateisi Electronics Co Color discriminating element
JPS59121982A (ja) * 1982-12-28 1984-07-14 Matsushita Electric Works Ltd 太陽電池装置
US4918506A (en) * 1985-09-13 1990-04-17 Fairchild Camera & Instrument Corporation Selectable resolution line-scan image sensor
GB2203895B (en) * 1987-03-25 1990-05-09 Matsushita Electric Works Ltd Light receiving element

Also Published As

Publication number Publication date
EP0324484A2 (de) 1989-07-19
EP0324484A3 (en) 1990-10-10
EP0324484B1 (de) 1994-09-28
US5128736A (en) 1992-07-07
JPH01181577A (ja) 1989-07-19
DE68918467T2 (de) 1995-03-02
DE68918467D1 (de) 1994-11-03

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee