ATE112418T1 - Verfahren zur herstellung künstlicher hochtemperatur-supraleiter mit mehrschichtiger struktur. - Google Patents

Verfahren zur herstellung künstlicher hochtemperatur-supraleiter mit mehrschichtiger struktur.

Info

Publication number
ATE112418T1
ATE112418T1 AT88108908T AT88108908T ATE112418T1 AT E112418 T1 ATE112418 T1 AT E112418T1 AT 88108908 T AT88108908 T AT 88108908T AT 88108908 T AT88108908 T AT 88108908T AT E112418 T1 ATE112418 T1 AT E112418T1
Authority
AT
Austria
Prior art keywords
superconductors
multilayer structure
manufacturing high
inlets
constituent components
Prior art date
Application number
AT88108908T
Other languages
English (en)
Inventor
Volker Dr Graf
Carl Alexander Prof Dr Mueller
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE112418T1 publication Critical patent/ATE112418T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/68—Crystals with laminate structure, e.g. "superlattices"
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Composite Materials (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Physical Vapour Deposition (AREA)
AT88108908T 1988-06-03 1988-06-03 Verfahren zur herstellung künstlicher hochtemperatur-supraleiter mit mehrschichtiger struktur. ATE112418T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88108908A EP0344352B1 (de) 1988-06-03 1988-06-03 Verfahren zur Herstellung künstlicher Hochtemperatur-Supraleiter mit mehrschichtiger Struktur

Publications (1)

Publication Number Publication Date
ATE112418T1 true ATE112418T1 (de) 1994-10-15

Family

ID=8199027

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88108908T ATE112418T1 (de) 1988-06-03 1988-06-03 Verfahren zur herstellung künstlicher hochtemperatur-supraleiter mit mehrschichtiger struktur.

Country Status (8)

Country Link
US (1) US5439876A (de)
EP (1) EP0344352B1 (de)
JP (1) JPH0761920B2 (de)
AT (1) ATE112418T1 (de)
BR (1) BR8902555A (de)
CA (1) CA1330193C (de)
DE (1) DE3851701T2 (de)
ES (1) ES2060622T3 (de)

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EP0586774B1 (de) * 1992-09-11 1997-05-02 International Business Machines Corporation Verfahren zum Herstellen dünner Schichten durch Mehrlagen-Abscheidung
US5972430A (en) * 1997-11-26 1999-10-26 Advanced Technology Materials, Inc. Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
FI108375B (fi) 1998-09-11 2002-01-15 Asm Microchemistry Oy Menetelmõ eristõvien oksidiohutkalvojen valmistamiseksi
US20060219157A1 (en) 2001-06-28 2006-10-05 Antti Rahtu Oxide films containing titanium
US7208041B2 (en) * 2000-02-23 2007-04-24 Ceracomp Co., Ltd. Method for single crystal growth of perovskite oxides
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7101795B1 (en) 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US7732327B2 (en) 2000-06-28 2010-06-08 Applied Materials, Inc. Vapor deposition of tungsten materials
US7964505B2 (en) 2005-01-19 2011-06-21 Applied Materials, Inc. Atomic layer deposition of tungsten materials
US7405158B2 (en) 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US6998579B2 (en) 2000-12-29 2006-02-14 Applied Materials, Inc. Chamber for uniform substrate heating
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6613656B2 (en) * 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US7211144B2 (en) 2001-07-13 2007-05-01 Applied Materials, Inc. Pulsed nucleation deposition of tungsten layers
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6729824B2 (en) 2001-12-14 2004-05-04 Applied Materials, Inc. Dual robot processing system
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US7439191B2 (en) 2002-04-05 2008-10-21 Applied Materials, Inc. Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications
US6846516B2 (en) 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6869838B2 (en) 2002-04-09 2005-03-22 Applied Materials, Inc. Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US6821563B2 (en) * 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US8202364B2 (en) * 2002-10-11 2012-06-19 Ceracomp Co., Ltd. Method for solid-state single crystal growth
KR100564092B1 (ko) * 2002-10-11 2006-03-27 주식회사 세라콤 고상 단결정 성장 방법
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7211508B2 (en) 2003-06-18 2007-05-01 Applied Materials, Inc. Atomic layer deposition of tantalum based barrier materials
JP4938534B2 (ja) * 2007-04-12 2012-05-23 アルバックテクノ株式会社 真空溶解装置およびルツボユニット
US20110293830A1 (en) 2010-02-25 2011-12-01 Timo Hatanpaa Precursors and methods for atomic layer deposition of transition metal oxides
US9062390B2 (en) 2011-09-12 2015-06-23 Asm International N.V. Crystalline strontium titanate and methods of forming the same

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SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FI64878C (fi) * 1982-05-10 1984-01-10 Lohja Ab Oy Kombinationsfilm foer isynnerhet tunnfilmelektroluminensstrukturer
JPS6096599A (ja) * 1983-10-31 1985-05-30 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導体薄膜の製造方法
GB2162862B (en) * 1984-07-26 1988-10-19 Japan Res Dev Corp A method of growing a thin film single crystalline semiconductor
KR930007853B1 (ko) * 1986-12-10 1993-08-20 후지 세이끼 가부시기 가이샤 진공 증발장치
US4983575A (en) * 1987-03-25 1991-01-08 Hitachi, Ltd. Superconducting thin films made of stacked composite oxide layers
JPH0719922B2 (ja) * 1987-07-29 1995-03-06 松下電器産業株式会社 超電導体および集積化超電導装置
EP0305292B1 (de) * 1987-08-24 1995-12-27 Sumitomo Electric Industries Limited Verfahren zur Herstellung einer dünnen Schicht aus zusammengesetztem supraleitendem Oxyd
JPS6465885A (en) * 1987-09-07 1989-03-13 Sanyo Electric Co Manufacture of superconducting thin film

Also Published As

Publication number Publication date
CA1330193C (en) 1994-06-14
JPH0761920B2 (ja) 1995-07-05
EP0344352B1 (de) 1994-09-28
BR8902555A (pt) 1990-01-23
DE3851701T2 (de) 1995-03-30
JPH029795A (ja) 1990-01-12
EP0344352A1 (de) 1989-12-06
US5439876A (en) 1995-08-08
ES2060622T3 (es) 1994-12-01
DE3851701D1 (de) 1994-11-03

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Legal Events

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UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee