ATE117736T1 - Vorrichtung und tiegel zur abscheidung aus der gasphase. - Google Patents

Vorrichtung und tiegel zur abscheidung aus der gasphase.

Info

Publication number
ATE117736T1
ATE117736T1 AT91403232T AT91403232T ATE117736T1 AT E117736 T1 ATE117736 T1 AT E117736T1 AT 91403232 T AT91403232 T AT 91403232T AT 91403232 T AT91403232 T AT 91403232T AT E117736 T1 ATE117736 T1 AT E117736T1
Authority
AT
Austria
Prior art keywords
compartments
crucible
diffusers
compartment
deposition
Prior art date
Application number
AT91403232T
Other languages
English (en)
Inventor
Dominique Valentian
Original Assignee
Europ Propulsion
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Europ Propulsion filed Critical Europ Propulsion
Application granted granted Critical
Publication of ATE117736T1 publication Critical patent/ATE117736T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52—Means for observation of the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
AT91403232T 1990-12-07 1991-11-29 Vorrichtung und tiegel zur abscheidung aus der gasphase. ATE117736T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9015368A FR2670219B1 (fr) 1990-12-07 1990-12-07 Appareil et creuset pour depot en phase vapeur.

Publications (1)

Publication Number Publication Date
ATE117736T1 true ATE117736T1 (de) 1995-02-15

Family

ID=9403020

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91403232T ATE117736T1 (de) 1990-12-07 1991-11-29 Vorrichtung und tiegel zur abscheidung aus der gasphase.

Country Status (9)

Country Link
US (1) US5140939A (de)
EP (1) EP0490727B1 (de)
JP (1) JPH04293768A (de)
AT (1) ATE117736T1 (de)
CA (1) CA2056816A1 (de)
DE (1) DE69107038T2 (de)
ES (1) ES2070463T3 (de)
FR (1) FR2670219B1 (de)
IE (1) IE914131A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0421780A (ja) * 1990-05-14 1992-01-24 Sharp Corp 気相成長装置
US5253266A (en) * 1992-07-20 1993-10-12 Intevac, Inc. MBE effusion source with asymmetrical heaters
KR100401544B1 (ko) * 2001-02-06 2003-10-17 삼성전자주식회사 반도체 공정에 사용되는 가스를 제공하는 방법 및 장치그리고 이를 갖는 가공 장치
KR100754404B1 (ko) * 2006-05-25 2007-08-31 삼성전자주식회사 확산튜브와, 확산공정용 도펀트 소스 및 상기 확산튜브와도펀트 소스를 이용한 확산방법
CN108004512A (zh) * 2018-01-17 2018-05-08 京东方科技集团股份有限公司 一种蒸发源以及蒸镀装置
WO2020206435A1 (en) * 2019-04-04 2020-10-08 Lunar Resources, Inc. Method and system for vacuum vapor deposition of functional materials in space
US12612690B1 (en) 2021-04-26 2026-04-28 Lunar Resources, Inc. Method and system for vacuum vapor deposition of functional thin film coatings onto an elongate substrate in space
CN117046408A (zh) * 2023-04-25 2023-11-14 中国电子科技集团公司第四十六研究所 一种二维铋氧硒薄膜材料合成装置及合成方法
EP4772668A1 (de) * 2024-12-20 2026-07-08 Commissariat à l'Energie Atomique et aux Energies Alternatives Vorrichtung und verfahren zur physikalischen sublimationsablagerung mit geringer entfernung

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1112044B (de) * 1959-12-05 1961-08-03 Akad Wissenschaften Ddr Verfahren und Vorrichtung zur Gewinnung von Kristallen aus der Dampfphase
US3343518A (en) * 1964-09-30 1967-09-26 Hayes Inc C I High temperature furnace
US3828722A (en) * 1970-05-01 1974-08-13 Cogar Corp Apparatus for producing ion-free insulating layers
US3632429A (en) * 1970-06-30 1972-01-04 Matsushita Electric Industrial Co Ltd Method for making metal oxide film resistors
DE2033444C3 (de) * 1970-07-06 1979-02-15 Siemens Ag Vorrichtung zum Eindiffundieren von Dotierstoffen in Scheiben aus Halbleitermaterial
AU485215B2 (en) * 1973-11-28 1976-05-20 Unisearch Limited Method for vapour growing crystals
US4211182A (en) * 1978-05-05 1980-07-08 Rca Corporation Diffusion apparatus
US4204893A (en) * 1979-02-16 1980-05-27 Bell Telephone Laboratories, Incorporated Process for depositing chrome doped epitaxial layers of gallium arsenide utilizing a preliminary formed chemical vapor-deposited chromium oxide dopant source
JPS62153192A (ja) * 1985-12-26 1987-07-08 Sharp Corp 化合物半導体の結晶成長方法

Also Published As

Publication number Publication date
US5140939A (en) 1992-08-25
ES2070463T3 (es) 1995-06-01
FR2670219A1 (fr) 1992-06-12
DE69107038D1 (de) 1995-03-09
EP0490727A1 (de) 1992-06-17
IE914131A1 (en) 1992-06-17
DE69107038T2 (de) 1995-06-22
EP0490727B1 (de) 1995-01-25
CA2056816A1 (en) 1992-06-08
FR2670219B1 (fr) 1993-03-19
JPH04293768A (ja) 1992-10-19

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee