ATE117813T1 - Optisches ausrichtungssystem zum gebrauch in der photolithographie mit reduziertem, durch den reflexionsgrad bedingten fehler. - Google Patents

Optisches ausrichtungssystem zum gebrauch in der photolithographie mit reduziertem, durch den reflexionsgrad bedingten fehler.

Info

Publication number
ATE117813T1
ATE117813T1 AT89303972T AT89303972T ATE117813T1 AT E117813 T1 ATE117813 T1 AT E117813T1 AT 89303972 T AT89303972 T AT 89303972T AT 89303972 T AT89303972 T AT 89303972T AT E117813 T1 ATE117813 T1 AT E117813T1
Authority
AT
Austria
Prior art keywords
substrate
stage
alignment
photolithography
degree
Prior art date
Application number
AT89303972T
Other languages
English (en)
Inventor
David S Holbrook
Craig R Simpson
Original Assignee
Mrs Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mrs Technology Inc filed Critical Mrs Technology Inc
Application granted granted Critical
Publication of ATE117813T1 publication Critical patent/ATE117813T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7069—Alignment mark illumination, e.g. darkfield, dual focus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
AT89303972T 1988-05-13 1989-04-21 Optisches ausrichtungssystem zum gebrauch in der photolithographie mit reduziertem, durch den reflexionsgrad bedingten fehler. ATE117813T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/193,887 US4855792A (en) 1988-05-13 1988-05-13 Optical alignment system for use in photolithography and having reduced reflectance errors

Publications (1)

Publication Number Publication Date
ATE117813T1 true ATE117813T1 (de) 1995-02-15

Family

ID=22715425

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89303972T ATE117813T1 (de) 1988-05-13 1989-04-21 Optisches ausrichtungssystem zum gebrauch in der photolithographie mit reduziertem, durch den reflexionsgrad bedingten fehler.

Country Status (5)

Country Link
US (1) US4855792A (de)
EP (1) EP0341848B1 (de)
JP (1) JPH0218924A (de)
AT (1) ATE117813T1 (de)
DE (1) DE68920772T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5168306A (en) * 1989-04-04 1992-12-01 Asahi Kogaku Kogyo Kabushiki Kaisha Exposure apparatus
US5198857A (en) * 1990-03-30 1993-03-30 Ushio Denski Kabushiki Kaisha Film exposure apparatus and method of exposure using the same
DE4304912C2 (de) * 1993-02-18 2003-03-06 Klaus Siebert Verfahren und Vorrichtung zur durchgehend automatischen Chipherstellung unter Vakuum
EP0701383A1 (de) * 1994-09-08 1996-03-13 Zellweger Luwa Ag Verfahren und Vorrichtung zur Übertragung von Daten
US5920378A (en) * 1995-03-14 1999-07-06 Nikon Corporation Projection exposure apparatus
US5767523A (en) * 1997-04-09 1998-06-16 Svg Lithography Systems, Inc. Multiple detector alignment system for photolithography
JP4029130B2 (ja) * 1997-06-03 2008-01-09 株式会社ニコン 露光装置及び露光方法
US7274430B2 (en) * 1998-02-20 2007-09-25 Carl Zeiss Smt Ag Optical arrangement and projection exposure system for microlithography with passive thermal compensation
US7385671B2 (en) * 2004-05-28 2008-06-10 Azores Corporation High speed lithography machine and method
US20060219947A1 (en) * 2005-03-03 2006-10-05 Asml Netherlands B.V. Dedicated metrology stage for lithography applications
US8547522B2 (en) * 2005-03-03 2013-10-01 Asml Netherlands B.V. Dedicated metrology stage for lithography applications
JP2006313885A (ja) * 2005-04-04 2006-11-16 Canon Inc 露光装置
US7755742B2 (en) * 2005-10-11 2010-07-13 Asml Netherlands B.V. Lithographic apparatus with mounted sensor
DE102008004762A1 (de) 2008-01-16 2009-07-30 Carl Zeiss Smt Ag Projektionsbelichtungsanlage für die Mikrolithographie mit einer Messeinrichtung
US9291560B2 (en) 2012-04-24 2016-03-22 Seagate Technology Llc Characterization of near field transducers
US9613643B2 (en) * 2013-08-05 2017-04-04 Seagate Technology Llc Alignment of optical components
CN109581823B (zh) 2017-09-29 2022-11-08 鲁道夫科技股份有限公司 用于最佳化微影曝光制程的系统和方法
KR102840275B1 (ko) 2020-02-21 2025-07-30 온투 이노베이션 아이엔씨. 리소그래피 공정에서 오버레이 오류를 보정하기 위한 시스템 및 방법

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS529503B2 (de) * 1972-05-26 1977-03-16
US4109158A (en) * 1976-05-27 1978-08-22 Western Electric Company, Inc. Apparatus for positioning a pair of elements into aligned intimate contact
JPS602772B2 (ja) * 1976-11-01 1985-01-23 株式会社日立製作所 露光装置
JPS5425169A (en) * 1977-07-27 1979-02-24 Mitsubishi Electric Corp Matching method for photo mask against semiconductor wafer
US4286201A (en) * 1979-02-21 1981-08-25 Amistar Corporation Automatic part positioning system
JPS56111225A (en) * 1980-02-01 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai X ray exposuring device
US4292576A (en) * 1980-02-29 1981-09-29 The United States Of America As Represented By The Secretary Of The Air Force Mask-slice alignment method
US4385238A (en) * 1981-03-03 1983-05-24 Veeco Instruments Incorporated Reregistration system for a charged particle beam exposure system
DE3318980C2 (de) * 1982-07-09 1986-09-18 Perkin-Elmer Censor Anstalt, Vaduz Vorrichtung zum Justieren beim Projektionskopieren von Masken
JPS6018738A (ja) * 1983-07-11 1985-01-30 Nippon Kogaku Kk <Nikon> 投影露光装置
US4629313A (en) * 1982-10-22 1986-12-16 Nippon Kogaku K.K. Exposure apparatus
JPS59119204A (ja) * 1982-12-27 1984-07-10 Toshiba Corp マ−ク位置検出方法
JPS6142915A (ja) * 1984-08-06 1986-03-01 Sanyo Electric Co Ltd Ｘ線マスク転写装置
US4623608A (en) * 1985-03-14 1986-11-18 Rca Corporation Method and apparatus for coating a selected area of the surface of an object
JPS62139387A (ja) * 1985-12-13 1987-06-23 株式会社ニコン パタ−ン描画装置
JPS62229942A (ja) * 1986-03-31 1987-10-08 Univ Nagoya 光学式位置決め装置
US4769680A (en) * 1987-10-22 1988-09-06 Mrs Technology, Inc. Apparatus and method for making large area electronic devices, such as flat panel displays and the like, using correlated, aligned dual optical systems

Also Published As

Publication number Publication date
DE68920772T2 (de) 1995-07-27
US4855792A (en) 1989-08-08
JPH0218924A (ja) 1990-01-23
DE68920772D1 (de) 1995-03-09
EP0341848A3 (en) 1990-06-13
EP0341848A2 (de) 1989-11-15
EP0341848B1 (de) 1995-01-25

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Legal Events

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