ATE119215T1 - Chemische abscheidemethoden unter verwendung überkritischer lösungen. - Google Patents

Chemische abscheidemethoden unter verwendung überkritischer lösungen.

Info

Publication number
ATE119215T1
ATE119215T1 AT91302637T AT91302637T ATE119215T1 AT E119215 T1 ATE119215 T1 AT E119215T1 AT 91302637 T AT91302637 T AT 91302637T AT 91302637 T AT91302637 T AT 91302637T AT E119215 T1 ATE119215 T1 AT E119215T1
Authority
AT
Austria
Prior art keywords
reagent
reacting
desired material
aerosol
vapor
Prior art date
Application number
AT91302637T
Other languages
English (en)
Inventor
Robert E Sievers
Brian N Hansen
Original Assignee
Univ Colorado Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Colorado Foundation filed Critical Univ Colorado Foundation
Application granted granted Critical
Publication of ATE119215T1 publication Critical patent/ATE119215T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00Processes for applying liquids or other fluent materials
    • B05D1/02Processes for applying liquids or other fluent materials performed by spraying
    • B05D1/025Processes for applying liquids or other fluent materials performed by spraying using gas close to its critical state
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D2401/00Form of the coating product, e.g. solution, water dispersion, powders or the like
    • B05D2401/90Form of the coating product, e.g. solution, water dispersion, powders or the like at least one component of the composition being in supercritical state or close to supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
AT91302637T 1990-04-12 1991-03-26 Chemische abscheidemethoden unter verwendung überkritischer lösungen. ATE119215T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/507,829 US4970093A (en) 1990-04-12 1990-04-12 Chemical deposition methods using supercritical fluid solutions

Publications (1)

Publication Number Publication Date
ATE119215T1 true ATE119215T1 (de) 1995-03-15

Family

ID=24020309

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91302637T ATE119215T1 (de) 1990-04-12 1991-03-26 Chemische abscheidemethoden unter verwendung überkritischer lösungen.

Country Status (6)

Country Link
US (1) US4970093A (de)
EP (1) EP0453107B1 (de)
JP (1) JPH04228574A (de)
KR (1) KR910018575A (de)
AT (1) ATE119215T1 (de)
DE (1) DE69107656T2 (de)

Families Citing this family (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1988010499A1 (fr) * 1987-06-16 1988-12-29 Kawasaki Steel Corporation Procede de formation de films minces d'oxyde supraconducteur
US5185296A (en) * 1988-07-26 1993-02-09 Matsushita Electric Industrial Co., Ltd. Method for forming a dielectric thin film or its pattern of high accuracy on a substrate
US5186974A (en) * 1988-08-16 1993-02-16 Hoechst Aktiengesellschaft Self-supporting sheet-like structure comprising a substrate and a coating, and a process for its production
US5213619A (en) * 1989-11-30 1993-05-25 Jackson David P Processes for cleaning, sterilizing, and implanting materials using high energy dense fluids
DE4108731A1 (de) * 1991-03-18 1992-09-24 Solvay Barium Strontium Gmbh Neuartige erdalkalimetall-heptandionat-verbindungen
KR930019861A (ko) * 1991-12-12 1993-10-19 완다 케이. 덴슨-로우 조밀상 기체를 이용한 코팅 방법
US5474812A (en) * 1992-01-10 1995-12-12 Amann & Sohne Gmbh & Co. Method for the application of a lubricant on a sewing yarn
DE4200498A1 (de) * 1992-01-10 1993-07-15 Amann & Soehne Verfahren zum auftragen einer avivage
US5301664A (en) * 1992-03-06 1994-04-12 Sievers Robert E Methods and apparatus for drug delivery using supercritical solutions
US5639441A (en) * 1992-03-06 1997-06-17 Board Of Regents Of University Of Colorado Methods for fine particle formation
EP0669858A4 (de) * 1992-11-02 1997-07-16 Ferro Corp Verfahren zur herstellung beschichteter materialien.
DE69312436T2 (de) * 1992-12-15 1998-02-05 Applied Materials Inc Verdampfung von flüssigen Reaktionspartnern für CVD
US6428623B2 (en) * 1993-05-14 2002-08-06 Micron Technology, Inc. Chemical vapor deposition apparatus with liquid feed
FR2707671B1 (fr) * 1993-07-12 1995-09-15 Centre Nat Rech Scient Procédé et dispositif d'introduction de précurseurs dans une enceinte de dépôt chimique en phase vapeur.
US5520942A (en) * 1994-02-15 1996-05-28 Nabisco, Inc. Snack food coating using supercritical fluid spray
GB9413202D0 (en) * 1994-06-30 1994-08-24 Univ Bradford Method and apparatus for the formation of particles
MX9504934A (es) * 1994-12-12 1997-01-31 Morton Int Inc Revestimientos en polvo de pelicula delgada lisa.
WO1996027032A1 (en) * 1995-02-28 1996-09-06 Micron Technology, Inc. Chemical vapor deposition utilizing a precursor
WO1996035983A1 (en) * 1995-05-10 1996-11-14 Ferro Corporation Control system for processes using supercritical fluids
BR9610069A (pt) * 1995-08-04 2000-05-09 Microcoating Technologies Disposição de vapor quìmico e formação de pó usando-se pulverização térmica com soluções de fluido quase super-crìticas e super-crìticas
US5925189A (en) 1995-12-06 1999-07-20 Applied Materials, Inc. Liquid phosphorous precursor delivery apparatus
US5872157A (en) * 1996-01-30 1999-02-16 The University Of North Carolina At Chapel Hill Method for olefin oxidation
US6583187B1 (en) 1996-07-19 2003-06-24 Andrew T. Daly Continuous processing of powder coating compositions
US6075074A (en) 1996-07-19 2000-06-13 Morton International, Inc. Continuous processing of powder coating compositions
US5766522A (en) * 1996-07-19 1998-06-16 Morton International, Inc. Continuous processing of powder coating compositions
US6114414A (en) * 1996-07-19 2000-09-05 Morton International, Inc. Continuous processing of powder coating compositions
US5916640A (en) * 1996-09-06 1999-06-29 Msp Corporation Method and apparatus for controlled particle deposition on surfaces
US5789027A (en) * 1996-11-12 1998-08-04 University Of Massachusetts Method of chemically depositing material onto a substrate
AU5710098A (en) * 1997-04-04 1998-10-30 Minnesota Mining And Manufacturing Company Continuous fluid-coating flow chemical alteration process
DE19882473T1 (de) * 1997-06-02 2002-01-31 Msp Corp Verfahren und Vorrichtung zur Dampferzeugung und Schichtaufbringung
US6409839B1 (en) 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
US6054103A (en) * 1997-06-25 2000-04-25 Ferro Corporation Mixing system for processes using supercritical fluids
US5993747A (en) * 1997-06-25 1999-11-30 Ferro Corporation Mixing system for processes using supercritical fluids
KR20010023080A (ko) * 1997-08-20 2001-03-26 아이다호 리서치 파운데이션, 아이엔씨. 금속들 또는 금속 화합물들을 분리하는 방법
US6218353B1 (en) * 1997-08-27 2001-04-17 Micell Technologies, Inc. Solid particulate propellant systems and aerosol containers employing the same
US6200352B1 (en) 1997-08-27 2001-03-13 Micell Technologies, Inc. Dry cleaning methods and compositions
US6294194B1 (en) 1997-10-14 2001-09-25 Boehringer Ingelheim Pharmaceuticals, Inc. Method for extraction and reaction using supercritical fluids
GB9810559D0 (en) * 1998-05-15 1998-07-15 Bradford Particle Design Ltd Method and apparatus for particle formation
US6461675B2 (en) 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6191054B1 (en) * 1998-10-08 2001-02-20 Matsushita Electric Industrial Co., Ltd. Method for forming film and method for fabricating semiconductor device
US6294836B1 (en) * 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
EP1024524A2 (de) * 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Abscheidung von dielektrischen Schichten unter Verwendung von überkritischem CO2
US6245655B1 (en) 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
US6204204B1 (en) * 1999-04-01 2001-03-20 Cvc Products, Inc. Method and apparatus for depositing tantalum-based thin films with organmetallic precursor
FR2791580B1 (fr) 1999-04-02 2001-05-04 Centre Nat Rech Scient Procede pour l'enrobage de particules
HK1049621A1 (zh) 1999-06-09 2003-05-23 罗伯特‧E‧希弗斯 超临界流体辅助的喷雾和鼓泡乾燥
GB9915975D0 (en) 1999-07-07 1999-09-08 Bradford Particle Design Ltd Method for the formation of particles
EP2017369A1 (de) * 1999-11-02 2009-01-21 University of Massachusetts Chemische Fluidabscheidung für die Bildung von Metall- und Metallegierungsfilmen auf gemusterten und ungemusterten Substraten
US6689700B1 (en) 1999-11-02 2004-02-10 University Of Massachusetts Chemical fluid deposition method for the formation of metal and metal alloy films on patterned and unpatterned substrates
FR2803538B1 (fr) * 1999-12-15 2002-06-07 Separex Sa Procede et dispositif de captage de fines particules par percolation dans un lit de granules
US6248136B1 (en) 2000-02-03 2001-06-19 Micell Technologies, Inc. Methods for carbon dioxide dry cleaning with integrated distribution
US6486355B1 (en) 2000-02-23 2002-11-26 Brookhaven Science Associates Llc Application of chiral critical clusters to assymetric synthesis
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
CZ20023273A3 (cs) * 2000-03-03 2003-05-14 Boehringer Ingelheim Pharmaceuticals, Inc. Zpracování materiálu opakovaným cyklem expanze a smrštění rozpouštědla
US6486078B1 (en) * 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
US6444263B1 (en) 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
US6652654B1 (en) * 2000-09-27 2003-11-25 Bechtel Bwxt Idaho, Llc System configured for applying multiple modifying agents to a substrate
US6623686B1 (en) * 2000-09-28 2003-09-23 Bechtel Bwxt Idaho, Llc System configured for applying a modifying agent to a non-equidimensional substrate
DE10059167A1 (de) * 2000-11-29 2002-06-06 Bsh Bosch Siemens Hausgeraete Backofen
US6576345B1 (en) 2000-11-30 2003-06-10 Novellus Systems Inc Dielectric films with low dielectric constants
EP1425355A1 (de) * 2001-07-12 2004-06-09 Eastman Kodak Company Eine komprimierte flüssige zusammensetzung
GB0208742D0 (en) 2002-04-17 2002-05-29 Bradford Particle Design Ltd Particulate materials
GB0117696D0 (en) * 2001-07-20 2001-09-12 Bradford Particle Design Plc Particle information
AU2002334935B2 (en) * 2001-10-10 2008-04-03 Boehringer Ingelheim Pharmaceuticals, Inc. Powder processing with pressurized gaseous fluids
EP1446356A4 (de) * 2001-11-21 2005-04-06 Univ Massachusetts Mesoporöse materialien und verfahren
EP1466353A4 (de) 2001-12-21 2008-04-16 Univ Massachusetts Kontaminationsunterdrückung bei der chemischen fluidablagerung
US20030123827A1 (en) * 2001-12-28 2003-07-03 Xtalight, Inc. Systems and methods of manufacturing integrated photonic circuit devices
US7119418B2 (en) * 2001-12-31 2006-10-10 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US7030168B2 (en) * 2001-12-31 2006-04-18 Advanced Technology Materials, Inc. Supercritical fluid-assisted deposition of materials on semiconductor substrates
US6848458B1 (en) 2002-02-05 2005-02-01 Novellus Systems, Inc. Apparatus and methods for processing semiconductor substrates using supercritical fluids
US7128840B2 (en) 2002-03-26 2006-10-31 Idaho Research Foundation, Inc. Ultrasound enhanced process for extracting metal species in supercritical fluids
US6653236B2 (en) * 2002-03-29 2003-11-25 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates; and semiconductor constructions
US7341947B2 (en) * 2002-03-29 2008-03-11 Micron Technology, Inc. Methods of forming metal-containing films over surfaces of semiconductor substrates
US7582284B2 (en) 2002-04-17 2009-09-01 Nektar Therapeutics Particulate materials
US7241334B2 (en) * 2002-05-23 2007-07-10 Columbian Chemicals Company Sulfonated carbonaceous materials
US7390441B2 (en) * 2002-05-23 2008-06-24 Columbian Chemicals Company Sulfonated conducting polymer-grafted carbon material for fuel cell applications
US7459103B2 (en) 2002-05-23 2008-12-02 Columbian Chemicals Company Conducting polymer-grafted carbon material for fuel cell applications
EP1509929A4 (de) * 2002-05-23 2007-03-21 Columbian Chem Leitungs-graftpolymerkohlenstoffmaterial für brennstoffzellenanwendungen
US7195834B2 (en) * 2002-05-23 2007-03-27 Columbian Chemicals Company Metallized conducting polymer-grafted carbon material and method for making
CN100339913C (zh) 2002-05-23 2007-09-26 哥伦比亚化学公司 用于燃料电池的、磺化导电聚合物接枝的碳材料
US20040118812A1 (en) * 2002-08-09 2004-06-24 Watkins James J. Etch method using supercritical fluids
US6884737B1 (en) 2002-08-30 2005-04-26 Novellus Systems, Inc. Method and apparatus for precursor delivery utilizing the melting point depression of solid deposition precursors in the presence of supercritical fluids
US7407703B2 (en) * 2002-09-20 2008-08-05 Bha Group, Inc. Composite membrane having oleophobic properties
US7771818B2 (en) 2002-09-20 2010-08-10 Bha Group, Inc. Treatment of porous article
US7927658B2 (en) * 2002-10-31 2011-04-19 Praxair Technology, Inc. Deposition processes using group 8 (VIII) metallocene precursors
US6818134B2 (en) * 2002-11-04 2004-11-16 General Electric Company Systems and methods for screening and optimization of solid oxide fuel cell materials
US7217398B2 (en) * 2002-12-23 2007-05-15 Novellus Systems Deposition reactor with precursor recycle
WO2004058218A2 (en) 2002-12-30 2004-07-15 Nektar Therapeutics Prefilming atomizer
WO2004098561A2 (en) * 2003-05-08 2004-11-18 Nektar Therapeutics Uk Ltd Particulate materials
US6835664B1 (en) * 2003-06-26 2004-12-28 Micron Technology, Inc. Methods of forming trenched isolation regions
US7048968B2 (en) * 2003-08-22 2006-05-23 Micron Technology, Inc. Methods of depositing materials over substrates, and methods of forming layers over substrates
US20050130449A1 (en) * 2003-12-15 2005-06-16 Ping Chuang Method of forming an oxide layer using a mixture of a supercritical state fluid and an oxidizing agent
US6958308B2 (en) * 2004-03-16 2005-10-25 Columbian Chemicals Company Deposition of dispersed metal particles onto substrates using supercritical fluids
WO2005092487A1 (ja) * 2004-03-26 2005-10-06 National Institute Of Advanced Industrial Science And Technology 超臨界処理方法およびそれに用いる装置
US7220456B2 (en) 2004-03-31 2007-05-22 Eastman Kodak Company Process for the selective deposition of particulate material
US7223445B2 (en) * 2004-03-31 2007-05-29 Eastman Kodak Company Process for the deposition of uniform layer of particulate material
US20050218076A1 (en) * 2004-03-31 2005-10-06 Eastman Kodak Company Process for the formation of particulate material
US7909263B2 (en) * 2004-07-08 2011-03-22 Cube Technology, Inc. Method of dispersing fine particles in a spray
US20060041248A1 (en) * 2004-08-23 2006-02-23 Patton David L Pharmaceutical compositions delivery system and methods
US7550179B2 (en) * 2004-08-30 2009-06-23 E.I Du Pont De Nemours And Company Method of copper deposition from a supercritical fluid solution containing copper (I) complexes with monoanionic bidentate and neutral monodentate ligands
US20060068987A1 (en) * 2004-09-24 2006-03-30 Srinivas Bollepalli Carbon supported catalyst having reduced water retention
JP2006120714A (ja) * 2004-10-19 2006-05-11 Tokyo Electron Ltd 成膜方法
US8241708B2 (en) 2005-03-09 2012-08-14 Micron Technology, Inc. Formation of insulator oxide films with acid or base catalyzed hydrolysis of alkoxides in supercritical carbon dioxide
JP4710002B2 (ja) * 2005-03-14 2011-06-29 国立大学法人東京農工大学 膜の製造方法
GB0524541D0 (en) * 2005-12-01 2006-01-11 Univ Cardiff Mixed-metal oxides
WO2008097664A1 (en) 2007-02-11 2008-08-14 Map Pharmaceuticals, Inc. Method of therapeutic administration of dhe to enable rapid relief of migraine while minimizing side effect profile
US20080254218A1 (en) * 2007-04-16 2008-10-16 Air Products And Chemicals, Inc. Metal Precursor Solutions For Chemical Vapor Deposition
US9010329B2 (en) * 2009-02-10 2015-04-21 Aerophase Electronically-controlled, high pressure flow control valve and method of use
JP5464015B2 (ja) * 2009-05-21 2014-04-09 トヨタ自動車株式会社 電極触媒層の製造方法、膜電極接合体の製造方法、および燃料電池の製造方法
JP5373731B2 (ja) * 2010-10-05 2013-12-18 トヨタ自動車株式会社 触媒担体の製造方法
JP5408209B2 (ja) 2011-08-30 2014-02-05 トヨタ自動車株式会社 触媒製造方法、当該方法により製造される燃料電池用電極触媒、及び、触媒製造装置
ES2751337T3 (es) 2012-02-07 2020-03-31 Centre Nat Rech Scient Procedimiento y dispositivo de preparación de nanopartículas por evaporación súbita
US9805931B2 (en) * 2015-08-28 2017-10-31 Varian Semiconductor Equipment Associates, Inc. Liquid immersion doping
DE102015121067B4 (de) * 2015-12-03 2018-10-18 Technische Universität Dresden Verfahren zur Reparaturvorbereitung von Faser-Kunststoff-Verbünden
FR3075829B1 (fr) * 2017-12-26 2020-09-04 Safran Ceram Procede et dispositif de depot d'un revetement sur une fibre continue

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2853066A1 (de) * 1978-12-08 1980-06-26 August Prof Dipl Phys D Winsel Verfahren zur abdeckung der oberflaeche von insbesondere poroesen pulvern oder poroesen koerpern mit schuetzenden oder schmueckenden schichten
US4582731A (en) * 1983-09-01 1986-04-15 Battelle Memorial Institute Supercritical fluid molecular spray film deposition and powder formation
US5108799A (en) * 1988-07-14 1992-04-28 Union Carbide Chemicals & Plastics Technology Corporation Liquid spray application of coatings with supercritical fluids as diluents and spraying from an orifice

Also Published As

Publication number Publication date
DE69107656T2 (de) 1995-10-05
KR910018575A (ko) 1991-11-30
US4970093A (en) 1990-11-13
DE69107656D1 (de) 1995-04-06
JPH04228574A (ja) 1992-08-18
EP0453107A1 (de) 1991-10-23
EP0453107B1 (de) 1995-03-01

Similar Documents

Publication Publication Date Title
ATE119215T1 (de) Chemische abscheidemethoden unter verwendung überkritischer lösungen.
ATE139580T1 (de) Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage
DK0630988T3 (da) Fremgangsmåde til forbedring af kvaliteten af ved kemisk pådampning fremstillede kobberfilm.
ATE75167T1 (de) Verfahren und vorrichtung fuer gasstrahlniederschlag von leitfaehigen und dielektrischen duennen festfilmen und so hergestellte erzeugnisse.
KR890700693A (ko) 클러스터 비임을 사용하는 에너지 인텐시브 표면 반응
ES457595A1 (es) Procedimiento para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
ATE133147T1 (de) Verfahren zur darstellung dampfförmiger reagenzien für die chemische abscheidung aus der dampfphase
ATE112328T1 (de) Verfahren zur chemischen abscheidung aus der dampfphase von nitriden der übergangsmetalle.
DE69432175D1 (de) Verfahren und vorrichtung zur verbrennungs cvd von filmen und beschichtungen
ES8500874A1 (es) Un procedimiento para depositar sobre un substrato de vidriocalentado una pelicula de control solar transparente, absorbente y reflectante.
EP0174743A3 (de) Verfahren zur Abscheidung von Dünnfilmen aus Nitriden der Übergangsmetalle
FR2403646A1 (fr) Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
Miehr et al. Lewis base adduct stabilized organogallium azides: synthesis and dynamic NMR spectroscopic studies of novel precursors to gallium nitride and role of ammonia as reactive carrier gas
KR960034487A (ko) 질화티탄박막의 제작방법
FI900082A0 (fi) Laitteisto ja menetelmä substraatin pinnoittamiseksi
DE3686571D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
KR920010034A (ko) 교대(alternating)화학반응에 의한 CVD 다이아몬드
US5140003A (en) Method for manufacturing layers from an oxide-ceramic superconductor material on a substrate using a cvd-process
SG59964A1 (en) Process for forming deposited film and process for preparing semiconductor device
DE3683364D1 (de) Herstellungsverfahren einer niedergeschlagenen schicht.
DE3752203D1 (de) Verfahren zur Herstellung einer niedergeschlagenen kristalliner Schicht
JPS5351187A (en) Gas phase chemical evaporation apparatus
KR970006168A (ko) 산소와 마그네슘이 일대일의 비로 들어 있는 마그네슘 유도체를 사용하여 산화 마그네슘을 기질 위에 피막하는 방법
ES466902A1 (es) Un metodo para formar una pelicula de fosforo-nitrogeno-oxi-geno.
AU7144087A (en) Process for forming deposited film

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties