ATE119712T1 - Sperrschichtphotozelle mit p-i-n übergängen des heterogenen typs. - Google Patents

Sperrschichtphotozelle mit p-i-n übergängen des heterogenen typs.

Info

Publication number
ATE119712T1
ATE119712T1 AT87309322T AT87309322T ATE119712T1 AT E119712 T1 ATE119712 T1 AT E119712T1 AT 87309322 T AT87309322 T AT 87309322T AT 87309322 T AT87309322 T AT 87309322T AT E119712 T1 ATE119712 T1 AT E119712T1
Authority
AT
Austria
Prior art keywords
layer
type
junctions
semiconductor layer
heterogeneous type
Prior art date
Application number
AT87309322T
Other languages
English (en)
Inventor
Peter V Meyers
Chung-Heng Liu
Timothy J Frey
Original Assignee
Colorado School Of Mines
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25446528&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE119712(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Colorado School Of Mines filed Critical Colorado School Of Mines
Application granted granted Critical
Publication of ATE119712T1 publication Critical patent/ATE119712T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/174—Photovoltaic cells having only PIN junction potential barriers comprising monocrystalline or polycrystalline materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
AT87309322T 1986-10-21 1987-10-21 Sperrschichtphotozelle mit p-i-n übergängen des heterogenen typs. ATE119712T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/922,122 US4710589A (en) 1986-10-21 1986-10-21 Heterojunction p-i-n photovoltaic cell

Publications (1)

Publication Number Publication Date
ATE119712T1 true ATE119712T1 (de) 1995-03-15

Family

ID=25446528

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87309322T ATE119712T1 (de) 1986-10-21 1987-10-21 Sperrschichtphotozelle mit p-i-n übergängen des heterogenen typs.

Country Status (10)

Country Link
US (1) US4710589A (de)
EP (1) EP0265251B1 (de)
JP (1) JP2702129B2 (de)
KR (1) KR960004097B1 (de)
AT (1) ATE119712T1 (de)
AU (1) AU604509B2 (de)
CA (1) CA1299715C (de)
DE (1) DE3751133D1 (de)
IL (1) IL84217A (de)
ZA (1) ZA877875B (de)

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US4977097A (en) * 1986-10-21 1990-12-11 Ametek, Inc. Method of making heterojunction P-I-N photovoltaic cell
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
US4764261A (en) * 1986-10-31 1988-08-16 Stemcor Corporation Method of making improved photovoltaic heterojunction structures
EP0296371B1 (de) * 1987-06-22 1992-12-23 Landis & Gyr Business Support AG Photodetektor für Ultraviolett und Verfahren zur Herstellung
US5286306A (en) * 1992-02-07 1994-02-15 Shalini Menezes Thin film photovoltaic cells from I-III-VI-VII compounds
US5393675A (en) * 1993-05-10 1995-02-28 The University Of Toledo Process for RF sputtering of cadmium telluride photovoltaic cell
US5621238A (en) * 1994-02-25 1997-04-15 The United States Of America As Represented By The Secretary Of The Air Force Narrow band semiconductor detector
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US5922142A (en) * 1996-11-07 1999-07-13 Midwest Research Institute Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making
US20060021648A1 (en) * 1997-05-09 2006-02-02 Parise Ronald J Device and method to transmit waste heat or thermal pollution into deep space
US5936193A (en) * 1997-05-09 1999-08-10 Parise; Ronald J. Nighttime solar cell
US6458254B2 (en) 1997-09-25 2002-10-01 Midwest Research Institute Plasma & reactive ion etching to prepare ohmic contacts
US5909632A (en) * 1997-09-25 1999-06-01 Midwest Research Institute Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
US6803322B1 (en) * 2000-12-15 2004-10-12 Science Applications International Corporation Pin alloy-semiconductor, radiation detectors with rectifying junction contacts, methods and systems for forming pin alloy-semiconductor devices with rectifying junction contacts, and systems and methods for analyzing alloy-semiconductor properties
AU2003243467A1 (en) * 2002-06-11 2003-12-22 The State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon St Polycrystalline thin-film solar cells
US20050098202A1 (en) * 2003-11-10 2005-05-12 Maltby Robert E.Jr. Non-planar photocell
DE102005047907A1 (de) * 2005-10-06 2007-04-12 Basf Ag Photovoltaische Zelle mit einem darin enthaltenen photovoltaisch aktiven Halbleitermaterial
US20080128020A1 (en) * 2006-11-30 2008-06-05 First Solar, Inc. Photovoltaic devices including a metal stack
CN101779290B (zh) * 2007-09-25 2013-02-27 第一太阳能有限公司 包括界面层的光伏器件
US20110017298A1 (en) 2007-11-14 2011-01-27 Stion Corporation Multi-junction solar cell devices
US8440903B1 (en) 2008-02-21 2013-05-14 Stion Corporation Method and structure for forming module using a powder coating and thermal treatment process
US8076175B2 (en) 2008-02-25 2011-12-13 Suniva, Inc. Method for making solar cell having crystalline silicon P-N homojunction and amorphous silicon heterojunctions for surface passivation
US20090301562A1 (en) * 2008-06-05 2009-12-10 Stion Corporation High efficiency photovoltaic cell and manufacturing method
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
US8298856B2 (en) * 2008-07-17 2012-10-30 Uriel Solar, Inc. Polycrystalline CDTE thin film semiconductor photovoltaic cell structures for use in solar electricity generation
US20110017257A1 (en) * 2008-08-27 2011-01-27 Stion Corporation Multi-junction solar module and method for current matching between a plurality of first photovoltaic devices and second photovoltaic devices
US20100051090A1 (en) * 2008-08-28 2010-03-04 Stion Corporation Four terminal multi-junction thin film photovoltaic device and method
US8569613B1 (en) * 2008-09-29 2013-10-29 Stion Corporation Multi-terminal photovoltaic module including independent cells and related system
US20100078059A1 (en) * 2008-09-30 2010-04-01 Stion Corporation Method and structure for thin film tandem photovoltaic cell
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
FR2956869B1 (fr) 2010-03-01 2014-05-16 Alex Hr Roustaei Systeme de production de film flexible a haute capacite destine a des cellules photovoltaiques et oled par deposition cyclique des couches
US8563850B2 (en) * 2009-03-16 2013-10-22 Stion Corporation Tandem photovoltaic cell and method using three glass substrate configuration
US8633097B2 (en) * 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
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US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
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WO2010144459A2 (en) * 2009-06-10 2010-12-16 Thinsilicon Corporation Photovoltaic modules and methods for manufacturing photovoltaic modules having tandem semiconductor layer stacks
KR101139443B1 (ko) * 2009-09-04 2012-04-30 엘지전자 주식회사 이종접합 태양전지와 그 제조방법
JP5515613B2 (ja) * 2009-10-22 2014-06-11 株式会社豊田中央研究所 半導体光応答体
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Also Published As

Publication number Publication date
CA1299715C (en) 1992-04-28
EP0265251A3 (en) 1989-04-26
DE3751133D1 (de) 1995-04-13
ZA877875B (en) 1988-06-29
US4710589A (en) 1987-12-01
EP0265251B1 (de) 1995-03-08
AU8001487A (en) 1988-04-28
EP0265251A2 (de) 1988-04-27
KR960004097B1 (ko) 1996-03-26
JP2702129B2 (ja) 1998-01-21
IL84217A0 (en) 1988-03-31
AU604509B2 (en) 1990-12-20
IL84217A (en) 1992-01-15
JPS63110777A (ja) 1988-05-16
KR880005701A (ko) 1988-06-30

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