ATE122322T1 - Verfahren zum herstellen von siliciumkarbid. - Google Patents
Verfahren zum herstellen von siliciumkarbid.Info
- Publication number
- ATE122322T1 ATE122322T1 AT90903075T AT90903075T ATE122322T1 AT E122322 T1 ATE122322 T1 AT E122322T1 AT 90903075 T AT90903075 T AT 90903075T AT 90903075 T AT90903075 T AT 90903075T AT E122322 T1 ATE122322 T1 AT E122322T1
- Authority
- AT
- Austria
- Prior art keywords
- chamber
- cooling
- wall
- transport member
- reactor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract 2
- 238000001816 cooling Methods 0.000 abstract 8
- 239000000376 reactant Substances 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 4
- 239000000203 mixture Substances 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/0095—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes in which two different types of particles react with each other
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/08—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with moving particles
- B01J8/12—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with moving particles moved by gravity in a downward flow
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
- C01B32/963—Preparation from compounds containing silicon
- C01B32/97—Preparation from SiO or SiO2
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/51—Particles with a specific particle size distribution
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Carbon And Carbon Compounds (AREA)
- Iron Core Of Rotating Electric Machines (AREA)
- Ceramic Products (AREA)
- Diaphragms For Electromechanical Transducers (AREA)
- Medicines Containing Antibodies Or Antigens For Use As Internal Diagnostic Agents (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US1989/000114 WO1990008104A1 (en) | 1989-01-11 | 1989-01-11 | Process for preparing silicon carbide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE122322T1 true ATE122322T1 (de) | 1995-05-15 |
Family
ID=22214776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT90903075T ATE122322T1 (de) | 1989-01-11 | 1990-01-11 | Verfahren zum herstellen von siliciumkarbid. |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP0453516B1 (de) |
| JP (1) | JP2841862B2 (de) |
| KR (1) | KR910700198A (de) |
| AT (1) | ATE122322T1 (de) |
| AU (1) | AU632795B2 (de) |
| BR (1) | BR9007006A (de) |
| CA (1) | CA2045526C (de) |
| DE (1) | DE69019339T2 (de) |
| FI (1) | FI913353A7 (de) |
| NO (1) | NO912715D0 (de) |
| WO (2) | WO1990008104A1 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5380688A (en) * | 1993-08-09 | 1995-01-10 | The Dow Chemical Company | Method for making submicrometer carbides, submicrometer solid solution carbides, and the material resulting therefrom |
| KR100766748B1 (ko) * | 2006-06-15 | 2007-10-12 | 주식회사 에코프로 | 구형의 탄소/실리카 나노복합체를 지지체로 하는촉매복합체의 제조방법 |
| RU2397144C1 (ru) * | 2009-03-06 | 2010-08-20 | Открытое Акционерное Общество "Инвестиционно-промышленная компания ТЕВА-Шунгит" | Способ получения наноструктурированного материала |
| JP6184732B2 (ja) * | 2013-04-26 | 2017-08-23 | 株式会社トクヤマ | 炭化珪素顆粒及びその製造方法 |
| JP6261384B2 (ja) * | 2014-03-03 | 2018-01-17 | 太平洋セメント株式会社 | 炭化珪素の製造方法 |
| CN114149007B (zh) * | 2020-09-04 | 2023-06-30 | 中国科学院过程工程研究所 | 一种碳化硅的制备方法 |
| RU206768U1 (ru) * | 2021-07-27 | 2021-09-28 | Федеральное государственное бюджетное учреждение науки Федеральный исследовательский центр «Коми научный центр Уральского отделения Российской академии наук» | Реактор для получения композитных углерод-карбидокремниевых волокон со структурой "сердцевина-оболочка" |
| DE102021128398A1 (de) | 2021-10-30 | 2023-05-04 | The Yellow SiC Holding GmbH | Siliziumkarbidhaltiges Material, Präkursor-Zusammensetzung und deren Herstellungsverfahren |
| DE102021131748B3 (de) | 2021-12-02 | 2023-02-23 | Nippon Kornmeyer Carbon Group Gmbh | Verfahren zum Herstellen von hochreinem Siliziumkarbid-Pulver |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1084235A (en) * | 1976-05-24 | 1980-08-26 | Ryo Enomoto | PROCESS AND AN APPARATUS FOR PRODUCING SILICON CARBIDE CONSISTING MAINLY OF .beta.-TYPE CRYSTAL |
| JPS55113609A (en) * | 1979-02-21 | 1980-09-02 | Ibiden Co Ltd | Manufacturing apparatus for beta crystallbase silicon carbide |
| JPS5684310A (en) * | 1979-12-14 | 1981-07-09 | Hiroshige Suzuki | Manufacture of betaatype silicon carbide |
| US4529575A (en) * | 1982-08-27 | 1985-07-16 | Ibiden Kabushiki Kaisha | Process for producing ultrafine silicon carbide powder |
-
1989
- 1989-01-11 WO PCT/US1989/000114 patent/WO1990008104A1/en not_active Ceased
-
1990
- 1990-01-11 KR KR1019900702052A patent/KR910700198A/ko not_active Withdrawn
- 1990-01-11 CA CA002045526A patent/CA2045526C/en not_active Expired - Fee Related
- 1990-01-11 WO PCT/US1990/000276 patent/WO1990008105A1/en not_active Ceased
- 1990-01-11 EP EP90903075A patent/EP0453516B1/de not_active Expired - Lifetime
- 1990-01-11 DE DE69019339T patent/DE69019339T2/de not_active Expired - Fee Related
- 1990-01-11 BR BR909007006A patent/BR9007006A/pt not_active Application Discontinuation
- 1990-01-11 JP JP2503249A patent/JP2841862B2/ja not_active Expired - Fee Related
- 1990-01-11 FI FI913353A patent/FI913353A7/fi unknown
- 1990-01-11 AT AT90903075T patent/ATE122322T1/de not_active IP Right Cessation
- 1990-01-11 AU AU50883/90A patent/AU632795B2/en not_active Ceased
-
1991
- 1991-07-10 NO NO912715A patent/NO912715D0/no unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO1990008105A1 (en) | 1990-07-26 |
| BR9007006A (pt) | 1991-10-22 |
| CA2045526A1 (en) | 1990-07-12 |
| AU5088390A (en) | 1990-08-13 |
| FI913353A0 (fi) | 1991-07-10 |
| EP0453516B1 (de) | 1995-05-10 |
| DE69019339D1 (de) | 1995-06-14 |
| NO912715L (no) | 1991-07-10 |
| WO1990008104A1 (en) | 1990-07-26 |
| EP0453516A1 (de) | 1991-10-30 |
| CA2045526C (en) | 2001-03-27 |
| DE69019339T2 (de) | 1995-09-14 |
| KR910700198A (ko) | 1991-03-14 |
| AU632795B2 (en) | 1993-01-14 |
| FI913353A7 (fi) | 1991-07-10 |
| JPH08506312A (ja) | 1996-07-09 |
| NO912715D0 (no) | 1991-07-10 |
| JP2841862B2 (ja) | 1998-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |