ATE122404T1 - Verfahren zum verbinden eines diamantenfilms mit einem substrat. - Google Patents

Verfahren zum verbinden eines diamantenfilms mit einem substrat.

Info

Publication number
ATE122404T1
ATE122404T1 AT91300582T AT91300582T ATE122404T1 AT E122404 T1 ATE122404 T1 AT E122404T1 AT 91300582 T AT91300582 T AT 91300582T AT 91300582 T AT91300582 T AT 91300582T AT E122404 T1 ATE122404 T1 AT E122404T1
Authority
AT
Austria
Prior art keywords
substrate
diamond film
bonding
metal layer
cvd diamond
Prior art date
Application number
AT91300582T
Other languages
English (en)
Inventor
Ricardo Simon Sussmann
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Application granted granted Critical
Publication of ATE122404T1 publication Critical patent/ATE122404T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02Pretreatment of the material to be coated
    • C23C16/0272Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/0281Deposition of sub-layers, e.g. to promote the adhesion of the main coating of metallic sub-layers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • C23C16/27Diamond only
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laminated Bodies (AREA)
AT91300582T 1990-01-26 1991-01-25 Verfahren zum verbinden eines diamantenfilms mit einem substrat. ATE122404T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB909001833A GB9001833D0 (en) 1990-01-26 1990-01-26 Method of bonding a diamond film to a substrate

Publications (1)

Publication Number Publication Date
ATE122404T1 true ATE122404T1 (de) 1995-05-15

Family

ID=10669965

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91300582T ATE122404T1 (de) 1990-01-26 1991-01-25 Verfahren zum verbinden eines diamantenfilms mit einem substrat.

Country Status (5)

Country Link
EP (1) EP0440384B1 (de)
AT (1) ATE122404T1 (de)
DE (1) DE69109503T2 (de)
GB (1) GB9001833D0 (de)
ZA (1) ZA91487B (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2076086A1 (en) * 1991-09-27 1993-03-28 Randall J. Kehl Method for obtaining thick, adherent diamond coatings using metal interface screens
EP0589641A3 (en) * 1992-09-24 1995-09-27 Gen Electric Method of producing wear resistant articles
JP3728467B2 (ja) * 1995-08-04 2005-12-21 株式会社神戸製鋼所 単結晶ダイヤモンド膜の形成方法
JPH0948694A (ja) * 1995-08-04 1997-02-18 Kobe Steel Ltd 単結晶ダイヤモンド膜の形成方法
US6962000B2 (en) * 2001-07-11 2005-11-08 Koninklijke Philips Electronics N.V. Cutting member with dual profile tip
US7419702B2 (en) * 2004-03-31 2008-09-02 Tokyo Electron Limited Method for processing a substrate
EP1802947A1 (de) 2004-10-01 2007-07-04 BAE Systems PLC Radiator mit hoher emissivität
DE602006009646D1 (de) 2006-04-20 2009-11-19 Capital Formation Inc Beschichtung für raue umgebungen und sensoren unter verwendung derselben
WO2015023356A1 (en) * 2013-08-12 2015-02-19 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Thin diamond film bonding providing low vapor pressure at high temperature

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE453474B (sv) * 1984-06-27 1988-02-08 Santrade Ltd Kompoundkropp belagd med skikt av polykristallin diamant
JPS622133A (ja) * 1985-06-28 1987-01-08 Shin Etsu Chem Co Ltd ミクロト−ム用ダイヤモンドコ−テイング刃およびその製造方法
JPH01153228A (ja) * 1987-12-10 1989-06-15 Asahi Daiyamondo Kogyo Kk 気相合成ダイヤモンド工具の製造法

Also Published As

Publication number Publication date
ZA91487B (en) 1991-11-27
DE69109503D1 (de) 1995-06-14
GB9001833D0 (en) 1990-03-28
EP0440384A1 (de) 1991-08-07
DE69109503T2 (de) 1995-11-09
EP0440384B1 (de) 1995-05-10

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties