ATE123915T1 - Radiofrequenzplasmaerzeugungsvorrichtung vom koaxialkavitätstyp. - Google Patents

Radiofrequenzplasmaerzeugungsvorrichtung vom koaxialkavitätstyp.

Info

Publication number
ATE123915T1
ATE123915T1 AT90105450T AT90105450T ATE123915T1 AT E123915 T1 ATE123915 T1 AT E123915T1 AT 90105450 T AT90105450 T AT 90105450T AT 90105450 T AT90105450 T AT 90105450T AT E123915 T1 ATE123915 T1 AT E123915T1
Authority
AT
Austria
Prior art keywords
plasma generating
radio frequency
generating device
frequency plasma
cavity type
Prior art date
Application number
AT90105450T
Other languages
English (en)
Inventor
Jes Asmussen
Original Assignee
Univ Michigan State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Michigan State filed Critical Univ Michigan State
Application granted granted Critical
Publication of ATE123915T1 publication Critical patent/ATE123915T1/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Transmitters (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Stringed Musical Instruments (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Discharge Heating (AREA)
AT90105450T 1989-04-03 1990-03-22 Radiofrequenzplasmaerzeugungsvorrichtung vom koaxialkavitätstyp. ATE123915T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/331,754 US4906900A (en) 1989-04-03 1989-04-03 Coaxial cavity type, radiofrequency wave, plasma generating apparatus

Publications (1)

Publication Number Publication Date
ATE123915T1 true ATE123915T1 (de) 1995-06-15

Family

ID=23295234

Family Applications (1)

Application Number Title Priority Date Filing Date
AT90105450T ATE123915T1 (de) 1989-04-03 1990-03-22 Radiofrequenzplasmaerzeugungsvorrichtung vom koaxialkavitätstyp.

Country Status (9)

Country Link
US (1) US4906900A (de)
EP (1) EP0391156B1 (de)
JP (1) JPH02295052A (de)
AT (1) ATE123915T1 (de)
CA (1) CA2010245C (de)
DE (2) DE391156T1 (de)
DK (1) DK0391156T3 (de)
ES (1) ES2018464T3 (de)
GR (2) GR910300023T1 (de)

Families Citing this family (32)

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US5227695A (en) * 1989-06-05 1993-07-13 Centre National De La Recherche Scientifique Device for coupling microwave energy with an exciter and for distributing it therealong for the purpose of producing a plasma
DE69026337T2 (de) * 1989-10-31 1996-08-14 Nippon Electric Co Ionenantrieb für Weltraumflüge
US5274306A (en) * 1990-08-31 1993-12-28 Kaufman & Robinson, Inc. Capacitively coupled radiofrequency plasma source
DE4037091C2 (de) * 1990-11-22 1996-06-20 Leybold Ag Vorrichtung für die Erzeugung eines homogenen Mikrowellenfeldes
US6953703B2 (en) * 1991-03-18 2005-10-11 The Trustees Of Boston University Method of making a semiconductor device with exposure of sapphire substrate to activated nitrogen
US5311103A (en) * 1992-06-01 1994-05-10 Board Of Trustees Operating Michigan State University Apparatus for the coating of material on a substrate using a microwave or UHF plasma
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
FR2702119B1 (fr) * 1993-02-25 1995-07-13 Metal Process Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique.
FR2711035B1 (fr) * 1993-10-04 1995-12-29 Plasmion Dispositif et procédé pour former un plasma par application de micro-ondes.
US5470423A (en) * 1994-01-25 1995-11-28 Board Of Trustees Operating Michigan State University Microwave pultrusion apparatus and method of use
FR2722213B1 (fr) * 1994-07-05 1996-09-20 Plasmion Dispositif pour creer un faisceau d'ions d'energie ajustable notamment pour le traitement au defile et sous vide de surfaces de grandes dimensions
EP0743671A3 (de) * 1995-05-19 1997-07-16 Hitachi Ltd Verfahren und Vorrichtung für einer Plasmabearbeitungsgerät
US5736818A (en) * 1996-03-15 1998-04-07 Board Of Trustees Operating Michigan State University Resonant radiofrequency wave plasma generating apparatus with improved stage
DE19756774B4 (de) * 1997-12-19 2009-12-31 Tec Tra Gmbh Mikrowellenplasmaquelle
DE19801366B4 (de) * 1998-01-16 2008-07-03 Applied Materials Gmbh & Co. Kg Vorrichtung zur Erzeugung von Plasma
US20030152700A1 (en) * 2002-02-11 2003-08-14 Board Of Trustees Operating Michigan State University Process for synthesizing uniform nanocrystalline films
US7511246B2 (en) 2002-12-12 2009-03-31 Perkinelmer Las Inc. Induction device for generating a plasma
WO2006099190A2 (en) 2005-03-11 2006-09-21 Perkinelmer, Inc. Plasmas and methods of using them
US8622735B2 (en) * 2005-06-17 2014-01-07 Perkinelmer Health Sciences, Inc. Boost devices and methods of using them
US7742167B2 (en) * 2005-06-17 2010-06-22 Perkinelmer Health Sciences, Inc. Optical emission device with boost device
US8593064B2 (en) * 2007-02-16 2013-11-26 Ad Astra Rocket Company Plasma source improved with an RF coupling system
EP1976346A1 (de) * 2007-03-30 2008-10-01 Ecole Polytechnique Verfahren zur Erzeugung eines Plasmas
US9259798B2 (en) 2012-07-13 2016-02-16 Perkinelmer Health Sciences, Inc. Torches and methods of using them
JP6661012B2 (ja) * 2015-11-18 2020-03-11 ジェイエスダブリュー スチール リミテッド 宇宙空間電熱推進に適したマイクロ波電熱スラスタ
US10923324B2 (en) 2017-07-10 2021-02-16 Verity Instruments, Inc. Microwave plasma source
US10679832B2 (en) * 2017-07-10 2020-06-09 Verity Instruments, Inc. Microwave plasma source
US10492287B2 (en) * 2017-09-06 2019-11-26 Omega-P R&D, Inc. Apparatus and method for isotope production based on a charged particle accelerator
TWI721373B (zh) * 2018-06-28 2021-03-11 美商梅瑞堤儀器公司 電漿源，用於一電漿之激發之激發系統及光學監控系統
ES2696227B2 (es) * 2018-07-10 2019-06-12 Centro De Investig Energeticas Medioambientales Y Tecnologicas Ciemat Fuente de iones interna para ciclotrones de baja erosion
US11701734B2 (en) * 2019-07-25 2023-07-18 The Esab Group, Inc. Apparatus and methods associated with operating a plasma torch
CN216928483U (zh) * 2021-12-01 2022-07-08 费勉仪器科技(南京)有限公司 内嵌式射频等离子体源发生装置及真空处理系统
CN114899067B (zh) * 2022-03-24 2024-11-26 兰州大学 一种八极永磁体结构天线内置式rf离子源

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3757518A (en) * 1970-11-03 1973-09-11 Messerschmitt Boelkow Blohm Ion engine
DE2219545A1 (de) * 1972-04-21 1973-10-31 Messerschmitt Boelkow Blohm Ionentriebwerk
US4058748A (en) * 1976-05-13 1977-11-15 Hitachi, Ltd. Microwave discharge ion source
JPS5852297B2 (ja) * 1979-06-04 1983-11-21 株式会社日立製作所 マイクロ波イオン源
US4393333A (en) * 1979-12-10 1983-07-12 Hitachi, Ltd. Microwave plasma ion source
JPS5947421B2 (ja) * 1980-03-24 1984-11-19 株式会社日立製作所 マイクロ波イオン源
US4507588A (en) * 1983-02-28 1985-03-26 Board Of Trustees Operating Michigan State University Ion generating apparatus and method for the use thereof
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
US4727293A (en) * 1984-08-16 1988-02-23 Board Of Trustees Operating Michigan State University Plasma generating apparatus using magnets and method
US4630566A (en) * 1984-08-16 1986-12-23 Board Of Trustees Operating Michigan State University Microwave or UHF plasma improved apparatus
US4777336A (en) * 1987-04-22 1988-10-11 Michigan State University Method for treating a material using radiofrequency waves
US4792772A (en) * 1987-08-24 1988-12-20 Michigan State University Microwave apparatus
US4778561A (en) * 1987-10-30 1988-10-18 Veeco Instruments, Inc. Electron cyclotron resonance plasma source
DE3738352A1 (de) * 1987-11-11 1989-05-24 Technics Plasma Gmbh Filamentloses magnetron-ionenstrahlsystem

Also Published As

Publication number Publication date
CA2010245A1 (en) 1990-10-03
ES2018464T3 (es) 1995-10-16
CA2010245C (en) 1993-05-11
EP0391156A2 (de) 1990-10-10
ES2018464A4 (es) 1991-04-16
GR910300023T1 (en) 1991-11-15
GR3017069T3 (en) 1995-11-30
JPH0586021B2 (de) 1993-12-09
JPH02295052A (ja) 1990-12-05
DK0391156T3 (da) 1995-10-02
EP0391156A3 (de) 1991-10-16
DE391156T1 (de) 1991-04-11
EP0391156B1 (de) 1995-06-14
DE69020031T2 (de) 1995-09-21
US4906900A (en) 1990-03-06
DE69020031D1 (de) 1995-07-20

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Legal Events

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UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee