ATE126398T1 - Verfahren zur herstellung von matrixen von mim- anordnungen und solche matrixen enthaltende anzeigevorrichtungen. - Google Patents

Verfahren zur herstellung von matrixen von mim- anordnungen und solche matrixen enthaltende anzeigevorrichtungen.

Info

Publication number
ATE126398T1
ATE126398T1 AT92201311T AT92201311T ATE126398T1 AT E126398 T1 ATE126398 T1 AT E126398T1 AT 92201311 T AT92201311 T AT 92201311T AT 92201311 T AT92201311 T AT 92201311T AT E126398 T1 ATE126398 T1 AT E126398T1
Authority
AT
Austria
Prior art keywords
matrixes
pad electrodes
layer
support
layers
Prior art date
Application number
AT92201311T
Other languages
English (en)
Inventor
John Martin Shannon
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of ATE126398T1 publication Critical patent/ATE126398T1/de

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1365Active matrix addressed cells in which the switching element is a two-electrode device
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
AT92201311T 1991-05-17 1992-05-08 Verfahren zur herstellung von matrixen von mim- anordnungen und solche matrixen enthaltende anzeigevorrichtungen. ATE126398T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB919110737A GB9110737D0 (en) 1991-05-17 1991-05-17 Method of fabricating mim type device arrays and display devices incorporating such arrays

Publications (1)

Publication Number Publication Date
ATE126398T1 true ATE126398T1 (de) 1995-08-15

Family

ID=10695191

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92201311T ATE126398T1 (de) 1991-05-17 1992-05-08 Verfahren zur herstellung von matrixen von mim- anordnungen und solche matrixen enthaltende anzeigevorrichtungen.

Country Status (7)

Country Link
US (1) US5258864A (de)
EP (1) EP0513911B1 (de)
JP (1) JPH07168207A (de)
KR (1) KR920022029A (de)
AT (1) ATE126398T1 (de)
DE (1) DE69203948T2 (de)
GB (1) GB9110737D0 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7167155B1 (en) 1995-07-20 2007-01-23 E Ink Corporation Color electrophoretic displays
DE19538128C1 (de) * 1995-10-13 1997-02-27 Lueder Ernst Verfahren zur Herstellung eines elektronischen Schaltelementes
US6704133B2 (en) 1998-03-18 2004-03-09 E-Ink Corporation Electro-optic display overlays and systems for addressing such displays
US7075502B1 (en) 1998-04-10 2006-07-11 E Ink Corporation Full color reflective display with multichromatic sub-pixels
CA2330950A1 (en) 1998-05-12 1999-11-18 E Ink Corporation Microencapsulated electrophoretic electrostatically-addressed media for drawing device applications
US7202847B2 (en) 2002-06-28 2007-04-10 E Ink Corporation Voltage modulated driver circuits for electro-optic displays
CN1323321C (zh) * 2003-06-30 2007-06-27 高通Mems科技公司 光干涉式显示单元的制造方法
CN1308764C (zh) * 2003-07-18 2007-04-04 高通Mems科技公司 光干涉式显示器面板及其制造方法
CN100367080C (zh) * 2003-08-27 2008-02-06 高通Mems科技公司 光干涉式显示面板以及其制造方法
US20080296562A1 (en) * 2007-05-31 2008-12-04 Murduck James M Methods and apparatus for fabricating carbon nanotubes and carbon nanotube devices
CN102971784B (zh) * 2010-07-02 2016-08-03 株式会社半导体能源研究所 液晶显示装置及驱动液晶显示装置的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396458A (en) * 1981-12-21 1983-08-02 International Business Machines Corporation Method for forming planar metal/insulator structures
JPS59131974A (ja) * 1983-01-18 1984-07-28 セイコーエプソン株式会社 液晶表示装置
DE3436527A1 (de) * 1984-10-05 1986-04-10 Vdo Adolf Schindling Ag, 6000 Frankfurt Multiplexbare fluessigkristallzelle
FR2579809B1 (fr) * 1985-04-02 1987-05-15 Thomson Csf Procede de realisation de matrices decommande a diodes pour ecran plat de visualisation electro-optique et ecran plat realise par ce procede
US4895789A (en) * 1988-03-29 1990-01-23 Seiko Instruments Inc. Method of manufacturing non-linear resistive element array
GB2244860A (en) * 1990-06-04 1991-12-11 Philips Electronic Associated Fabricating mim type device array and display devices incorporating such arrays

Also Published As

Publication number Publication date
DE69203948T2 (de) 1996-03-21
US5258864A (en) 1993-11-02
DE69203948D1 (de) 1995-09-14
KR920022029A (ko) 1992-12-19
JPH07168207A (ja) 1995-07-04
EP0513911A1 (de) 1992-11-19
GB9110737D0 (en) 1991-07-10
EP0513911B1 (de) 1995-08-09

Similar Documents

Publication Publication Date Title
ATE126398T1 (de) Verfahren zur herstellung von matrixen von mim- anordnungen und solche matrixen enthaltende anzeigevorrichtungen.
TW331598B (en) LCD and method of making same
CA2246057A1 (en) Thin film fabrication technique for implantable electrodes
CA2158886A1 (en) Electron-Emitting Device and Method of Manufacturing the Same as Well as Electron Source and Image Forming Apparatus Comprising Such Electron-Emitting Devices
KR890015050A (ko) 박막형성방법 및 액티브매트릭스 표시장치와 그 제조방법
KR960018698A (ko) 전극기판, 그 제조방법 및 이를 사용한 표시장치
KR980003736A (ko) 액정표시장치의 제조방법
DE68904667D1 (de) Herstellungsverfahren fuer einen duennschichttyp-widerstand.
KR960702137A (ko) 반사 디스플레이 제작 방법(Method of manufacturing a reflective display)
KR960029855A (ko) 박막트랜지스터 액정 디스플레이 소자 및 그 제조방법
TW360922B (en) Method of manufacturing a semiconductor integrated circuit device
DE69122148D1 (de) Dünnschicht-Halbleiterbauelement
US3863331A (en) Matching of semiconductor device characteristics
DE3575066D1 (de) Elektrolumineszenzlampe.
KR970030081A (ko) 전계방출형 표시소자의 스페이서 제조방법 및 그에의해 제조된 스페이서를 구비하는 전계방출형 표시소자
JPS63141362A (ja) 半導体装置
KR970075984A (ko) 액티브매트릭스기판의 제조방법 및 그 방법에 의해 제조되는 액티브매트릭스기판
JPS61181191A (ja) 厚膜印刷装置
JPS6441264A (en) Contact type image sensor
JPS62280791A (ja) 薄膜半導体装置の製造方法
JPS6273233A (ja) 電気光学装置の製造方法
KR970030364A (ko) 광로 조절장치의 제조방법
KR920005314A (ko) 반도체 장치 및 그 제조 방법
JPS5846444U (ja) 半導体装置
KR19990009762A (ko) 액정 표시 장치의 제조 방법