ATE133499T1 - Lichtempfindliches element - Google Patents

Lichtempfindliches element

Info

Publication number
ATE133499T1
ATE133499T1 AT87303041T AT87303041T ATE133499T1 AT E133499 T1 ATE133499 T1 AT E133499T1 AT 87303041 T AT87303041 T AT 87303041T AT 87303041 T AT87303041 T AT 87303041T AT E133499 T1 ATE133499 T1 AT E133499T1
Authority
AT
Austria
Prior art keywords
light receiving
substrate
sensitive element
light sensitive
disposed
Prior art date
Application number
AT87303041T
Other languages
English (en)
Inventor
Hiroshi Amada
Tetsuya Takei
Naoko Shirai
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8037886A external-priority patent/JPS62258464A/ja
Priority claimed from JP61080379A external-priority patent/JPS62258465A/ja
Priority claimed from JP61080377A external-priority patent/JPS62258463A/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE133499T1 publication Critical patent/ATE133499T1/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/0825—Silicon-based comprising five or six silicon-based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08278—Depositing methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Inspection Of Paper Currency And Valuable Securities (AREA)
  • Measuring Fluid Pressure (AREA)
  • Geophysics And Detection Of Objects (AREA)
AT87303041T 1986-04-08 1987-04-08 Lichtempfindliches element ATE133499T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP8037886A JPS62258464A (ja) 1986-04-08 1986-04-08 光受容部材
JP61080379A JPS62258465A (ja) 1986-04-08 1986-04-08 光受容部材
JP61080377A JPS62258463A (ja) 1986-04-08 1986-04-08 光受容部材

Publications (1)

Publication Number Publication Date
ATE133499T1 true ATE133499T1 (de) 1996-02-15

Family

ID=27303277

Family Applications (1)

Application Number Title Priority Date Filing Date
AT87303041T ATE133499T1 (de) 1986-04-08 1987-04-08 Lichtempfindliches element

Country Status (7)

Country Link
US (2) US4786573A (de)
EP (1) EP0241274B1 (de)
CN (1) CN1012851B (de)
AT (1) ATE133499T1 (de)
AU (1) AU596047B2 (de)
CA (1) CA1305350C (de)
DE (1) DE3751681T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4906542A (en) * 1987-04-23 1990-03-06 Canon Kabushiki Kaisha Light receiving member having a multilayered light receiving layer composed of a lower layer made of aluminum-containing inorganic material and an upper layer made of non-single-crystal silicon material
JPH0797227B2 (ja) * 1988-03-25 1995-10-18 富士ゼロックス株式会社 電子写真用感光体
JP3049866B2 (ja) * 1991-09-25 2000-06-05 ミノルタ株式会社 接触帯電用感光体及び画像形成装置
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US7741657B2 (en) * 2006-07-17 2010-06-22 Intel Corporation Inverted planar avalanche photodiode
US7683397B2 (en) * 2006-07-20 2010-03-23 Intel Corporation Semi-planar avalanche photodiode
WO2009142164A1 (ja) * 2008-05-21 2009-11-26 キヤノン株式会社 負帯電用電子写真感光体、画像形成方法および電子写真装置
US20130330911A1 (en) * 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US20170294289A1 (en) * 2016-04-11 2017-10-12 Aaron Reinicker Boron compositions suitable for ion implantation to produce a boron-containing ion beam current

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
US4403026A (en) * 1980-10-14 1983-09-06 Canon Kabushiki Kaisha Photoconductive member having an electrically insulating oxide layer
DE3420741C2 (de) * 1983-06-02 1996-03-28 Minolta Camera Kk Elektrophotographisches Aufzeichnungsmaterial
JPS6126053A (ja) * 1984-07-16 1986-02-05 Minolta Camera Co Ltd 電子写真感光体
EP0223361B1 (de) * 1985-09-21 1991-02-27 Canon Kabushiki Kaisha Photorezeptorelemente
ES2054659T3 (es) * 1986-01-23 1994-08-16 Canon Kk Elemento fotorreceptor destinado a su empleo en electrofotografia.

Also Published As

Publication number Publication date
DE3751681D1 (de) 1996-03-07
DE3751681T2 (de) 1996-06-05
US4786573A (en) 1988-11-22
CN1012851B (zh) 1991-06-12
CA1305350C (en) 1992-07-21
CN87102632A (zh) 1988-01-20
US4904556A (en) 1990-02-27
AU596047B2 (en) 1990-04-12
AU7116287A (en) 1987-10-15
EP0241274B1 (de) 1996-01-24
EP0241274A3 (en) 1988-11-30
EP0241274A2 (de) 1987-10-14

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