ATE137275T1 - Verfahren zur herstellung einer planen diamantschicht mittels cvd - Google Patents

Verfahren zur herstellung einer planen diamantschicht mittels cvd

Info

Publication number
ATE137275T1
ATE137275T1 AT92310952T AT92310952T ATE137275T1 AT E137275 T1 ATE137275 T1 AT E137275T1 AT 92310952 T AT92310952 T AT 92310952T AT 92310952 T AT92310952 T AT 92310952T AT E137275 T1 ATE137275 T1 AT E137275T1
Authority
AT
Austria
Prior art keywords
producing
cvd
diamond layer
substrate
plain
Prior art date
Application number
AT92310952T
Other languages
English (en)
Inventor
Friedel Siegfried Knemeyr
David Earl Slutz
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE137275T1 publication Critical patent/ATE137275T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S427/00—Coating processes
    • Y10S427/103—Diamond-like carbon coating, i.e. DLC
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT92310952T 1991-12-13 1992-12-01 Verfahren zur herstellung einer planen diamantschicht mittels cvd ATE137275T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/806,389 US5270077A (en) 1991-12-13 1991-12-13 Method for producing flat CVD diamond film

Publications (1)

Publication Number Publication Date
ATE137275T1 true ATE137275T1 (de) 1996-05-15

Family

ID=25193936

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92310952T ATE137275T1 (de) 1991-12-13 1992-12-01 Verfahren zur herstellung einer planen diamantschicht mittels cvd

Country Status (8)

Country Link
US (1) US5270077A (de)
EP (1) EP0551730B1 (de)
JP (1) JPH05306195A (de)
KR (1) KR930013199A (de)
AT (1) ATE137275T1 (de)
CA (1) CA2082728A1 (de)
DE (1) DE69210202D1 (de)
ZA (1) ZA929237B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331260B1 (en) * 1990-01-24 2001-12-18 The United States Of America As Represented By The Secretary Of The Air Force VD process and apparatus for producing stand-alone thin films
US5474816A (en) * 1993-04-16 1995-12-12 The Regents Of The University Of California Fabrication of amorphous diamond films
US5514242A (en) * 1993-12-30 1996-05-07 Saint Gobain/Norton Industrial Ceramics Corporation Method of forming a heat-sinked electronic component
US5620754A (en) 1994-01-21 1997-04-15 Qqc, Inc. Method of treating and coating substrates
US5554415A (en) 1994-01-18 1996-09-10 Qqc, Inc. Substrate coating techniques, including fabricating materials on a surface of a substrate
US5731046A (en) 1994-01-18 1998-03-24 Qqc, Inc. Fabrication of diamond and diamond-like carbon coatings
JP3774904B2 (ja) * 1994-01-27 2006-05-17 住友電気工業株式会社 平坦なダイヤモンド膜の合成法とダイヤモンド自立膜及びダイヤモンド膜の研磨方法
DE69503285T2 (de) * 1994-04-07 1998-11-05 Sumitomo Electric Industries Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
US5507987A (en) * 1994-04-28 1996-04-16 Saint Gobain/Norton Industrial Ceramics Corp. Method of making a free-standing diamond film with reduced bowing
EP0878268B1 (de) 1994-05-23 2002-03-27 Sumitomo Electric Industries, Ltd. Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
EP0699776B1 (de) * 1994-06-09 1999-03-31 Sumitomo Electric Industries, Limited Wafer und Verfahren zur Herstellung eines Wafers
DE69535861D1 (de) * 1994-06-24 2008-11-27 Sumitomo Electric Industries Wafer und sein Herstellungsverfahren
US5587124A (en) * 1994-07-05 1996-12-24 Meroth; John Method of making synthetic diamond film with reduced bowing
US6063149A (en) * 1995-02-24 2000-05-16 Zimmer; Jerry W. Graded grain size diamond layer
US5897924A (en) * 1995-06-26 1999-04-27 Board Of Trustees Operating Michigan State University Process for depositing adherent diamond thin films
GB9513426D0 (en) * 1995-06-29 1997-03-12 Diamanx Products Ltd Diamond treatment
US5620745A (en) * 1995-12-19 1997-04-15 Saint Gobain/Norton Industrial Ceramics Corp. Method for coating a substrate with diamond film
CA2173676A1 (en) * 1996-03-18 1997-09-19 Gregory Bak-Boychuk Diamond film deposition
CA2249288A1 (en) * 1996-03-18 1997-12-24 Martin G. Bradley Diamond film deposition
US6284315B1 (en) 1996-07-29 2001-09-04 Aurburn University Method of polishing diamond films
US6558742B1 (en) 1999-02-10 2003-05-06 Auburn University Method of hot-filament chemical vapor deposition of diamond
KR100352985B1 (ko) 1999-04-30 2002-09-18 한국과학기술연구원 균열이 없고 평탄한 다이아몬드막 합성 방법
CA2625684A1 (en) * 2006-03-17 2007-09-27 Vinder Jaggi Self-supporting multilayer films having a diamond-like carbon layer
WO2011123553A2 (en) * 2010-04-02 2011-10-06 Visa International Service Association Crack embossing using diamond technology
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
WO2014095373A1 (en) 2012-12-18 2014-06-26 Element Six Limited Substrates for semiconductor devices
US9469918B2 (en) 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
US10246794B2 (en) * 2014-02-05 2019-04-02 Adamant Namiki Precision Jewel Co., Ltd. Diamond substrate and method for manufacturing diamond substrate
JPWO2017022647A1 (ja) * 2015-07-31 2018-05-31 アダマンド並木精密宝石株式会社 ダイヤモンド基板及びダイヤモンド基板の製造方法
CN114059036B (zh) * 2021-11-23 2023-03-14 南京大学 铁薄膜在辅助剥离金刚石多晶薄膜中的应用
DE102022205081A1 (de) * 2022-05-20 2023-11-23 Universität Augsburg, Körperschaft des öffentlichen Rechts Verfahren, Substrat, Vorrichtung und deren Verwendung zur Synthese von ebenen einkristallinen Diamanten

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE442305B (sv) * 1984-06-27 1985-12-16 Santrade Ltd Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen
JPH0757039B2 (ja) * 1988-05-09 1995-06-14 株式会社ケンウッド 音響用振動板及びその製造法
US5006203A (en) * 1988-08-12 1991-04-09 Texas Instruments Incorporated Diamond growth method
GB8912498D0 (en) * 1989-05-31 1989-07-19 De Beers Ind Diamond Diamond growth
EP0422303B1 (de) * 1989-10-13 1994-12-07 British Aerospace Public Limited Company Hinterkantenklappen eines Flugzeuges
CA2034440A1 (en) * 1990-02-13 1991-08-14 Thomas R. Anthony Cvd diamond workpieces and their fabrication
US5183689A (en) * 1991-07-15 1993-02-02 Cvd, Inc. Process for an improved laminated of znse and zns

Also Published As

Publication number Publication date
CA2082728A1 (en) 1993-06-14
US5270077A (en) 1993-12-14
JPH05306195A (ja) 1993-11-19
EP0551730B1 (de) 1996-04-24
KR930013199A (ko) 1993-07-21
ZA929237B (en) 1993-08-11
EP0551730A1 (de) 1993-07-21
DE69210202D1 (de) 1996-05-30

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