ATE142282T1 - Einrichtung zum beschicken mit hochreinen chemischen werkstoffen - Google Patents

Einrichtung zum beschicken mit hochreinen chemischen werkstoffen

Info

Publication number
ATE142282T1
ATE142282T1 AT94105564T AT94105564T ATE142282T1 AT E142282 T1 ATE142282 T1 AT E142282T1 AT 94105564 T AT94105564 T AT 94105564T AT 94105564 T AT94105564 T AT 94105564T AT E142282 T1 ATE142282 T1 AT E142282T1
Authority
AT
Austria
Prior art keywords
delivery conduit
source
use point
pressure
chemical
Prior art date
Application number
AT94105564T
Other languages
English (en)
Inventor
Lewis Joseph Mostowy
Naser Mahmud Chowdhury
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Application granted granted Critical
Publication of ATE142282T1 publication Critical patent/ATE142282T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Gases (AREA)
  • Pipeline Systems (AREA)
  • Discharge Heating (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
  • Filling Or Discharging Of Gas Storage Vessels (AREA)
AT94105564T 1993-04-16 1994-04-11 Einrichtung zum beschicken mit hochreinen chemischen werkstoffen ATE142282T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/049,042 US5359787A (en) 1993-04-16 1993-04-16 High purity bulk chemical delivery system

Publications (1)

Publication Number Publication Date
ATE142282T1 true ATE142282T1 (de) 1996-09-15

Family

ID=21957754

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94105564T ATE142282T1 (de) 1993-04-16 1994-04-11 Einrichtung zum beschicken mit hochreinen chemischen werkstoffen

Country Status (5)

Country Link
US (2) US5359787A (de)
EP (1) EP0620291B1 (de)
AT (1) ATE142282T1 (de)
DE (1) DE69400458T2 (de)
ES (1) ES2094582T3 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5359787A (en) * 1993-04-16 1994-11-01 Air Products And Chemicals, Inc. High purity bulk chemical delivery system
US5673562A (en) * 1996-02-23 1997-10-07 L'air Liquide, S.A. Bulk delivery of ultra-high purity gases at high flow rates
US5833738A (en) * 1996-03-01 1998-11-10 D.D.I. Ltd. Specialty gas purification system
US5761911A (en) * 1996-11-25 1998-06-09 American Air Liquide Inc. System and method for controlled delivery of liquified gases
US6076359A (en) * 1996-11-25 2000-06-20 American Air Liquide Inc. System and method for controlled delivery of liquified gases
US6004433A (en) * 1997-02-03 1999-12-21 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes George Claude Purification of electronic specialty gases by vapor phase transfilling
JPH11139805A (ja) * 1997-07-29 1999-05-25 Millipore Corp ハロゲン化水素から水分を除去するための組成物とその方法
US5910292A (en) * 1997-08-19 1999-06-08 Aeronex, Inc. Method for water removal from corrosive gas streams
US5894742A (en) * 1997-09-16 1999-04-20 L'air Liquide, Societe Anonyme Pour L'etude Et, L'exploitation Des Procedes Georges Claude Methods and systems for delivering an ultra-pure gas to a point of use
US5958356A (en) * 1997-11-05 1999-09-28 Air Products And Chemicals, Inc. Method for removal of moisture from gaseous HCl
WO1999027572A1 (en) * 1997-11-20 1999-06-03 Fsi International, Inc. Method for delivery of hydrogen fluoride gas
US6122931A (en) * 1998-04-07 2000-09-26 American Air Liquide Inc. System and method for delivery of a vapor phase product to a point of use
US6032483A (en) * 1998-04-07 2000-03-07 American Air Liquide Inc. System and method for delivery of a vapor phase product to a point of use
US6224252B1 (en) 1998-07-07 2001-05-01 Air Products And Chemicals, Inc. Chemical generator with controlled mixing and concentration feedback and adjustment
US6643951B1 (en) * 1998-08-24 2003-11-11 Air Products And Chemicals, Inc. Detecting liquid dry conditions for liquified compressed gases
US6134805A (en) 1998-08-24 2000-10-24 Air Products And Chemicals, Inc. Detecting liquid dry conditions for liquefied compressed gases
US6207460B1 (en) * 1999-01-14 2001-03-27 Extraction Systems, Inc. Detection of base contaminants in gas samples
US6221132B1 (en) 1999-10-14 2001-04-24 Air Products And Chemicals, Inc. Vacuum preparation of hydrogen halide drier
US6363728B1 (en) 2000-06-20 2002-04-02 American Air Liquide Inc. System and method for controlled delivery of liquefied gases from a bulk source
US6915660B2 (en) * 2001-04-06 2005-07-12 The Boc Group, Inc. Method and system for liquefaction monitoring
US7334708B2 (en) * 2001-07-16 2008-02-26 L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Procedes Georges Claude Integral blocks, chemical delivery systems and methods for delivering an ultrapure chemical
US7279421B2 (en) 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7270848B2 (en) 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7345184B2 (en) 2005-03-31 2008-03-18 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US20070266585A1 (en) * 2005-04-16 2007-11-22 Michael Arno Portable Disposable Air/Gas Dryer
US7264013B2 (en) * 2005-05-13 2007-09-04 Air Products And Chemicals, Inc. Enhanced purge effect in gas conduit
US7459395B2 (en) 2005-09-28 2008-12-02 Tokyo Electron Limited Method for purifying a metal carbonyl precursor
US7644512B1 (en) 2006-01-18 2010-01-12 Akrion, Inc. Systems and methods for drying a rotating substrate
US20070204631A1 (en) * 2006-03-03 2007-09-06 American Air Liquide, Inc. Liquefied Chemical Gas Delivery System
US7892358B2 (en) 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US7829454B2 (en) 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US7884012B2 (en) 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US7776740B2 (en) 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US8247030B2 (en) 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US7799681B2 (en) 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
US7871929B2 (en) 2008-07-30 2011-01-18 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US7776743B2 (en) 2008-07-30 2010-08-17 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
TW201028363A (en) * 2008-10-24 2010-08-01 Solvay Fluor Gmbh Bundle trailer for gas delivery
US7977235B2 (en) 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
US9416919B2 (en) * 2013-10-11 2016-08-16 Applied Materials, Inc. Compact hazardous gas line distribution enabling system single point connections for multiple chambers
US11155758B2 (en) * 2019-05-30 2021-10-26 Airgas, Inc. Method of dosing a system with HCL then evacuating and purging

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2057661B (en) * 1979-07-23 1983-04-13 British Nuclear Fuels Ltd Apparatus for metering and controlling a feed of hydrogen fluoride vapour
US4532778A (en) * 1979-11-16 1985-08-06 Rocket Research Company Chemical heat pump and chemical energy storage system
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
JPH0698292B2 (ja) * 1986-07-03 1994-12-07 忠弘 大見 超高純度ガスの供給方法及び供給系
IT1198290B (it) * 1986-12-02 1988-12-21 Sgs Microelettronica Spa Metodo di decontaminazione di una camera utilizzata nei processi sotto vuoto di deposizione,attacco o crescita di films di elevata purezza,di particolare applicazione nella tecnologia dei semiconduttori
US4853148A (en) * 1987-03-24 1989-08-01 Advanced Technology Materials, Inc. Process and composition for drying of gaseous hydrogen halides
US5137047A (en) * 1990-08-24 1992-08-11 Mark George Delivery of reactive gas from gas pad to process tool
US5148945B1 (en) * 1990-09-17 1996-07-02 Applied Chemical Solutions Apparatus and method for the transfer and delivery of high purity chemicals
US5359787A (en) * 1993-04-16 1994-11-01 Air Products And Chemicals, Inc. High purity bulk chemical delivery system

Also Published As

Publication number Publication date
DE69400458D1 (de) 1996-10-10
ES2094582T3 (es) 1997-01-16
EP0620291A1 (de) 1994-10-19
US5539998A (en) 1996-07-30
EP0620291B1 (de) 1996-09-04
US5359787A (en) 1994-11-01
DE69400458T2 (de) 1997-01-30

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