ATE156866T1 - Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma - Google Patents

Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma

Info

Publication number
ATE156866T1
ATE156866T1 AT94906936T AT94906936T ATE156866T1 AT E156866 T1 ATE156866 T1 AT E156866T1 AT 94906936 T AT94906936 T AT 94906936T AT 94906936 T AT94906936 T AT 94906936T AT E156866 T1 ATE156866 T1 AT E156866T1
Authority
AT
Austria
Prior art keywords
substrate
nitrogen plasma
deposing
time
thin layer
Prior art date
Application number
AT94906936T
Other languages
English (en)
Inventor
Franck Callebert
Philippe Supiot
Odile Dessaux
Pierre Goudmand
Original Assignee
Thomson Csf Passive Components
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson Csf Passive Components filed Critical Thomson Csf Passive Components
Application granted granted Critical
Publication of ATE156866T1 publication Critical patent/ATE156866T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
AT94906936T 1993-02-10 1994-02-09 Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma ATE156866T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9301484A FR2701492B1 (fr) 1993-02-10 1993-02-10 Procédé pour déposer une couche mince sur un substrat par plasma froid différé d'azote.

Publications (1)

Publication Number Publication Date
ATE156866T1 true ATE156866T1 (de) 1997-08-15

Family

ID=9443921

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94906936T ATE156866T1 (de) 1993-02-10 1994-02-09 Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma

Country Status (9)

Country Link
EP (1) EP0683825B1 (de)
JP (1) JPH08506381A (de)
KR (1) KR960701237A (de)
AT (1) ATE156866T1 (de)
CA (1) CA2155659A1 (de)
DE (1) DE69404971T2 (de)
FI (1) FI953779A7 (de)
FR (1) FR2701492B1 (de)
WO (1) WO1994018355A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2718155B1 (fr) * 1994-04-05 1996-04-26 Europ Composants Electron Procédé de dépôt de diélectrique et/ou de métal sur un substrat.
WO1997010287A1 (fr) * 1995-09-15 1997-03-20 Sommer Revetements France S.A. Procede d'obtention d'un revetement de sol et produit obtenu
US7129187B2 (en) 2004-07-14 2006-10-31 Tokyo Electron Limited Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films
EP4077762A1 (de) * 2019-12-19 2022-10-26 AGC Glass Europe Mit siliciumoxid beschichtete polymerfilme und niederdruck-pecvd-verfahren zu deren herstellung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
US4863755A (en) * 1987-10-16 1989-09-05 The Regents Of The University Of California Plasma enhanced chemical vapor deposition of thin films of silicon nitride from cyclic organosilicon nitrogen precursors
FR2651782B1 (fr) * 1989-09-14 1993-03-19 Air Liquide Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique.
US4980196A (en) * 1990-02-14 1990-12-25 E. I. Du Pont De Nemours And Company Method of coating steel substrate using low temperature plasma processes and priming
FR2661688B1 (fr) * 1990-05-02 1992-07-17 Air Liquide Revetement multicouche pour substrat polycarbonate et procede d'elaboration d'un tel revetement.
JPH0782999B2 (ja) * 1991-04-15 1995-09-06 株式会社半導体プロセス研究所 気相成長膜の形成方法、半導体製造装置、および半 導体装置
DE4126759A1 (de) * 1991-08-13 1993-02-18 Siemens Ag Verfahren zur erzeugung siliciumhaltiger organischer schichten

Also Published As

Publication number Publication date
EP0683825A1 (de) 1995-11-29
EP0683825B1 (de) 1997-08-13
DE69404971D1 (de) 1997-09-18
KR960701237A (ko) 1996-02-24
DE69404971T2 (de) 1997-12-18
FR2701492A1 (fr) 1994-08-19
FI953779L (fi) 1995-09-22
CA2155659A1 (en) 1994-08-18
WO1994018355A1 (fr) 1994-08-18
FR2701492B1 (fr) 1996-05-10
FI953779A7 (fi) 1995-09-22
JPH08506381A (ja) 1996-07-09
FI953779A0 (fi) 1995-08-09

Similar Documents

Publication Publication Date Title
WO2004017365A3 (en) Deposition of amorphous silicon-containing films
DE3884697D1 (de) Verfahren zur gesteigerten Abscheidung von Siliciumoxid durch Plasma.
CA2013478A1 (en) Method of forming coatings containing amorphous silicon carbide
CA2095449A1 (en) Supersaturated Rare Earth Doped Semiconductor Layers by Chemical Vapor Deposition
DE69736969D1 (de) Verfahren zur Behandlung der Oberfläche von halbleitenden Substraten
DE69431443D1 (de) Verfahren zum beschichten mit dünnen metallschichten von gruppe iii a-metallen
DE69231321D1 (de) Verfahren zur Herstellung eines Substrates von SOI-Type mit einer monokristallinen Schicht aus Silizium auf einer isolierenden Schicht
AU4531693A (en) Methods of chemical vapor deposition (cvd) of films on patterned wafer substrates
WO1994000870A3 (en) Chemical vapor deposition from single organometallic precursors
EP1296365A3 (de) Filmherstellungsmethode, isolierende Schicht, und Halbleitersubstrat
DE69333173D1 (de) Verfahren zur Herstellung eines Substrates mit einer Halbleiterschicht auf einem Isolator
KR950007021A (ko) 평탄화된 절연막을 갖는 반도체장치
EP0372405A3 (de) Korrosionsverhütende Vorbehandlung für kupferfreie Spiegel
DK228689A (da) Beskyttende flerlagsbelaegning til beskyttelse af et substrat og fremgangsmaade til frembringelse af en saadan belaegning
DE69304819D1 (de) Verfahren zur Herstellung einer Silizium-enthaltenden Schicht auf ein metallisches Substrat sowie Anti-Korrosionsbehandlung
ATE156866T1 (de) Verfahren zur abscheidung einer dünnen schicht auf einem substrat durch zeitverzögertes kaltes stickstoffplasma
EP0845804A3 (de) Substratvorbehandlung vor der Abscheidung eines isolierenden Filmes
ATE150585T1 (de) Verfahren zur herstellung einer halbleitervorrichtung mit einer verdrahtungsstruktur hoher dichte
DE60211597D1 (de) PECVD von Siliciumdioxidfilmen von optischer Qualität
DE69025252D1 (de) Verfahren zum Herstellen einer abgeschiedenen Schicht und Verfahren zum Herstellen einer Halbleitervorrichtung
ATE115648T1 (de) Verfahren zur abscheidung einer kupfer enthaltenden schicht ii.
JPH1121669A5 (de)
DE59102061D1 (de) Verfahren zur Abscheidung einer Kupfer enthaltenden Schicht I.
Hanabusa et al. Photoinduced Selective Deposition of Aluminium Thin Film Using Dimethylaluminum Hydride
NO981171L (no) Gulvbelegg og fremgangsmÕte for fremstilling av et sÕdant

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties