ATE158442T1 - Fotoelektrische übertragungsvorrichtung - Google Patents

Fotoelektrische übertragungsvorrichtung

Info

Publication number
ATE158442T1
ATE158442T1 AT91301745T AT91301745T ATE158442T1 AT E158442 T1 ATE158442 T1 AT E158442T1 AT 91301745 T AT91301745 T AT 91301745T AT 91301745 T AT91301745 T AT 91301745T AT E158442 T1 ATE158442 T1 AT E158442T1
Authority
AT
Austria
Prior art keywords
layer
transmission device
photoelectric transmission
light
multiplying
Prior art date
Application number
AT91301745T
Other languages
English (en)
Inventor
Masato Yamanobe
Shigetoshi Sugawa
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE158442T1 publication Critical patent/ATE158442T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/197—Bipolar transistor image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding

Landscapes

  • Seal Device For Vehicle (AREA)
  • Light Receiving Elements (AREA)
  • Gloves (AREA)
  • Solid State Image Pick-Up Elements (AREA)
AT91301745T 1990-03-02 1991-03-01 Fotoelektrische übertragungsvorrichtung ATE158442T1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4960090 1990-03-02
JP4959690 1990-03-02
JP4959990 1990-03-02
JP4959890 1990-03-02
JP4959790 1990-03-02
JP4960190 1990-03-02

Publications (1)

Publication Number Publication Date
ATE158442T1 true ATE158442T1 (de) 1997-10-15

Family

ID=27550372

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91301745T ATE158442T1 (de) 1990-03-02 1991-03-01 Fotoelektrische übertragungsvorrichtung

Country Status (4)

Country Link
US (1) US5155351A (de)
EP (1) EP0444963B1 (de)
AT (1) ATE158442T1 (de)
DE (1) DE69127644T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
CA2059197C (en) * 1991-01-11 1998-08-18 Shigetoshi Sugawa Photoelectric converting device and image processing apparatus utilizing the same
US5401952A (en) * 1991-10-25 1995-03-28 Canon Kabushiki Kaisha Signal processor having avalanche photodiodes
DE69231398T2 (de) * 1991-11-22 2001-02-22 Canon K.K., Tokio/Tokyo Photoelektrischer Wandler und Steuerverfahren dafür
JPH05335615A (ja) * 1992-05-27 1993-12-17 Canon Inc 光電変換装置
JPH06151801A (ja) * 1992-11-13 1994-05-31 Canon Inc 光電変換装置及び光電変換装置の製造方法
JPH0799298A (ja) * 1993-09-28 1995-04-11 Sony Corp 固体撮像素子及びその製造方法
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
WO2002027763A2 (en) 2000-09-25 2002-04-04 Foveon, Inc. Active pixel sensor with noise cancellation
KR100886352B1 (ko) * 2006-10-24 2009-03-03 삼성전자주식회사 불휘발성 메모리 장치 및 그 제조 방법
KR20130142000A (ko) * 2012-06-18 2013-12-27 삼성전자주식회사 이미지 센서, 이를 포함하는 이미지 처리 장치, 및 이의 제조 방법
WO2020010590A1 (en) * 2018-07-12 2020-01-16 Shenzhen Xpectvision Technology Co., Ltd. Image sensors with silver-nanoparticle electrodes
CN115117099B (zh) * 2021-03-17 2026-01-23 京东方科技集团股份有限公司 探测基板、其制作方法及平板探测器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3300644A (en) * 1963-12-04 1967-01-24 Jay N Zemel Self-chopping photodetector
GB1251226A (de) * 1967-11-20 1971-10-27
JPS5856363A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 受光素子
US4476477A (en) * 1982-02-23 1984-10-09 At&T Bell Laboratories Graded bandgap multilayer avalanche photodetector with energy step backs
JPH0824199B2 (ja) * 1984-05-31 1996-03-06 富士通株式会社 半導体受光素子の製造方法
JPS61239678A (ja) * 1985-04-16 1986-10-24 Mitsubishi Electric Corp 光電変換装置
EP0216572B1 (de) * 1985-09-24 1995-04-05 Kabushiki Kaisha Toshiba Halbleiter-Photodetektor mit einem zweistufigen Verunreinigungsprofil
JPH07120767B2 (ja) * 1986-09-19 1995-12-20 キヤノン株式会社 光電変換装置
US4729963A (en) * 1986-11-21 1988-03-08 Bell Communications Research, Inc. Fabrication method for modified planar semiconductor structures
JPH084132B2 (ja) * 1987-05-11 1996-01-17 キヤノン株式会社 光電変換装置

Also Published As

Publication number Publication date
EP0444963A2 (de) 1991-09-04
US5155351A (en) 1992-10-13
DE69127644D1 (de) 1997-10-23
EP0444963A3 (en) 1992-05-13
DE69127644T2 (de) 1998-02-05
EP0444963B1 (de) 1997-09-17

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Legal Events

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