ATE159056T1 - Vorrichtung und verfahren zur behandlung eines wafers aus halbleiter-werkstoff - Google Patents

Vorrichtung und verfahren zur behandlung eines wafers aus halbleiter-werkstoff

Info

Publication number
ATE159056T1
ATE159056T1 AT93915843T AT93915843T ATE159056T1 AT E159056 T1 ATE159056 T1 AT E159056T1 AT 93915843 T AT93915843 T AT 93915843T AT 93915843 T AT93915843 T AT 93915843T AT E159056 T1 ATE159056 T1 AT E159056T1
Authority
AT
Austria
Prior art keywords
semiconductor material
wafer
treatment space
treating
gas
Prior art date
Application number
AT93915843T
Other languages
English (en)
Inventor
Guy Jean Jacques Brasseur
Original Assignee
Cobrain Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cobrain Nv filed Critical Cobrain Nv
Application granted granted Critical
Publication of ATE159056T1 publication Critical patent/ATE159056T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
AT93915843T 1992-07-07 1993-07-07 Vorrichtung und verfahren zur behandlung eines wafers aus halbleiter-werkstoff ATE159056T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL9201211A NL9201211A (nl) 1992-07-07 1992-07-07 Inrichting en werkwijze voor het behandelen van een plak halfgeleider-materiaal.

Publications (1)

Publication Number Publication Date
ATE159056T1 true ATE159056T1 (de) 1997-10-15

Family

ID=19861026

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93915843T ATE159056T1 (de) 1992-07-07 1993-07-07 Vorrichtung und verfahren zur behandlung eines wafers aus halbleiter-werkstoff

Country Status (8)

Country Link
EP (1) EP0614497B1 (de)
JP (1) JPH07502381A (de)
AT (1) ATE159056T1 (de)
DE (1) DE69314465T2 (de)
DK (1) DK0614497T3 (de)
ES (1) ES2107672T3 (de)
NL (1) NL9201211A (de)
WO (1) WO1994001597A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
WO1995023428A2 (en) * 1994-02-23 1995-08-31 Applied Materials, Inc. Chemical vapor deposition chamber
US6210483B1 (en) 1997-12-02 2001-04-03 Applied Materials, Inc. Anti-notch thinning heater
US6222161B1 (en) 1998-01-12 2001-04-24 Tokyo Electron Limited Heat treatment apparatus
JP3555734B2 (ja) * 1998-03-24 2004-08-18 大日本スクリーン製造株式会社 基板加熱処理装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57110665A (en) * 1980-12-26 1982-07-09 Seiko Epson Corp Heating mechanism for vacuum apparatus
US5060354A (en) * 1990-07-02 1991-10-29 George Chizinsky Heated plate rapid thermal processor
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing

Also Published As

Publication number Publication date
DE69314465T2 (de) 1998-02-12
DK0614497T3 (da) 1998-05-18
EP0614497B1 (de) 1997-10-08
NL9201211A (nl) 1994-02-01
ES2107672T3 (es) 1997-12-01
JPH07502381A (ja) 1995-03-09
WO1994001597A1 (en) 1994-01-20
EP0614497A1 (de) 1994-09-14
DE69314465D1 (de) 1997-11-13

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee