ATE159126T1 - Halbleiteranordnung für hohe spannungen - Google Patents

Halbleiteranordnung für hohe spannungen

Info

Publication number
ATE159126T1
ATE159126T1 AT93202158T AT93202158T ATE159126T1 AT E159126 T1 ATE159126 T1 AT E159126T1 AT 93202158 T AT93202158 T AT 93202158T AT 93202158 T AT93202158 T AT 93202158T AT E159126 T1 ATE159126 T1 AT E159126T1
Authority
AT
Austria
Prior art keywords
voltage
breakdown
raising
island
zones
Prior art date
Application number
AT93202158T
Other languages
English (en)
Inventor
Adrianus W Ludikhuize
Franciscus A C M Schoofs
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE159126T1 publication Critical patent/ATE159126T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT93202158T 1992-07-20 1993-07-13 Halbleiteranordnung für hohe spannungen ATE159126T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92202210 1992-07-20

Publications (1)

Publication Number Publication Date
ATE159126T1 true ATE159126T1 (de) 1997-10-15

Family

ID=8210793

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93202158T ATE159126T1 (de) 1992-07-20 1993-07-13 Halbleiteranordnung für hohe spannungen

Country Status (4)

Country Link
US (1) US5324978A (de)
JP (1) JP2554234B2 (de)
AT (1) ATE159126T1 (de)
DE (1) DE69314401T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267479B2 (ja) * 1995-10-11 2002-03-18 東芝マイクロエレクトロニクス株式会社 半導体集積回路装置
US9299857B2 (en) * 2014-06-19 2016-03-29 Macronix International Co., Ltd. Semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833881A (ja) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp 光電変換装置
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
JPS63138766A (ja) * 1986-11-29 1988-06-10 Nec Kansai Ltd 半導体素子
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
JPH01136372A (ja) * 1987-11-24 1989-05-29 Seiko Epson Corp 半導体装置
JPH01295460A (ja) * 1988-05-24 1989-11-29 Matsushita Electric Works Ltd 半導体装置
GB2239986A (en) * 1990-01-10 1991-07-17 Philips Electronic Associated A semiconductor device with increased breakdown voltage

Also Published As

Publication number Publication date
US5324978A (en) 1994-06-28
JP2554234B2 (ja) 1996-11-13
JPH06163593A (ja) 1994-06-10
DE69314401D1 (de) 1997-11-13
DE69314401T2 (de) 1998-04-09

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee