ATE159126T1 - Halbleiteranordnung für hohe spannungen - Google Patents

Halbleiteranordnung für hohe spannungen

Info

Publication number
ATE159126T1
ATE159126T1 AT93202158T AT93202158T ATE159126T1 AT E159126 T1 ATE159126 T1 AT E159126T1 AT 93202158 T AT93202158 T AT 93202158T AT 93202158 T AT93202158 T AT 93202158T AT E159126 T1 ATE159126 T1 AT E159126T1
Authority
AT
Austria
Prior art keywords
voltage
breakdown
raising
island
zones
Prior art date
Application number
AT93202158T
Other languages
English (en)
Inventor
Adrianus W Ludikhuize
Franciscus A C M Schoofs
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE159126T1 publication Critical patent/ATE159126T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

Landscapes

  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT93202158T 1992-07-20 1993-07-13 Halbleiteranordnung für hohe spannungen ATE159126T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92202210 1992-07-20

Publications (1)

Publication Number Publication Date
ATE159126T1 true ATE159126T1 (de) 1997-10-15

Family

ID=8210793

Family Applications (1)

Application Number Title Priority Date Filing Date
AT93202158T ATE159126T1 (de) 1992-07-20 1993-07-13 Halbleiteranordnung für hohe spannungen

Country Status (4)

Country Link
US (1) US5324978A (de)
JP (1) JP2554234B2 (de)
AT (1) ATE159126T1 (de)
DE (1) DE69314401T2 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3267479B2 (ja) * 1995-10-11 2002-03-18 東芝マイクロエレクトロニクス株式会社 半導体集積回路装置
US9299857B2 (en) * 2014-06-19 2016-03-29 Macronix International Co., Ltd. Semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833881A (ja) * 1981-08-21 1983-02-28 Mitsubishi Electric Corp 光電変換装置
GB2131603B (en) * 1982-12-03 1985-12-18 Philips Electronic Associated Semiconductor devices
GB2134705B (en) * 1983-01-28 1985-12-24 Philips Electronic Associated Semiconductor devices
NL8401983A (nl) * 1984-06-22 1986-01-16 Philips Nv Halfgeleiderinrichting met verhoogde doorslagspanning.
JPS63138766A (ja) * 1986-11-29 1988-06-10 Nec Kansai Ltd 半導体素子
US5223919A (en) * 1987-02-25 1993-06-29 U. S. Philips Corp. Photosensitive device suitable for high voltage operation
JPH01136372A (ja) * 1987-11-24 1989-05-29 Seiko Epson Corp 半導体装置
JPH01295460A (ja) * 1988-05-24 1989-11-29 Matsushita Electric Works Ltd 半導体装置
GB2239986A (en) * 1990-01-10 1991-07-17 Philips Electronic Associated A semiconductor device with increased breakdown voltage

Also Published As

Publication number Publication date
DE69314401T2 (de) 1998-04-09
JP2554234B2 (ja) 1996-11-13
JPH06163593A (ja) 1994-06-10
US5324978A (en) 1994-06-28
DE69314401D1 (de) 1997-11-13

Similar Documents

Publication Publication Date Title
KR900017162A (ko) 반도체 집적회로 장치
MY107475A (en) Semiconductor device and method for producing the same.
IT8367973A0 (it) Procedimento per la fabbricazione di circuiti integrati a semiconduttori con contatti autoallineati e circuiti integrati realizzati con tale procedimento
KR950007093A (ko) 게이트 밀도를 증가시키기 위한 일련의 기판 탭 및 확장부를 갖는 대칭형 다층금속 로직 어래이
KR840005920A (ko) 반도체 집적회로 장치
KR920007199A (ko) 반도체기억장치
KR960015962A (ko) 박막트랜지스터
KR880700466A (ko) 정전기 보호 집적 회로
KR920005297A (ko) 반도체집적회로 장치
FR2360994A1 (fr) Circuit integre semi-conducteur, logique a transistors a induction statique
KR850001642A (ko) 증폭기 회로
ATE159126T1 (de) Halbleiteranordnung für hohe spannungen
KR880006782A (ko) 접합 파괴방지 반도체장치
KR910008861A (ko) 집적회로소자
KR950020965A (ko) 반도체 장치
GB1209740A (en) Transistors
KR850008249A (ko) 반도체 장치
KR100652071B1 (ko) 반도체 소자
KR920005391A (ko) 바이폴라 트랜지스터 · 절연 게이트형 트랜지스터 혼재 반도체장치
KR900011044A (ko) Mos트랜지스터 및 이 mos트랜지스터를 사용한 차동증폭회로
SE7707251L (sv) Halvledardiod for integrerad krets
SU1482479A1 (ru) Полевой вертикальный транзистор
GB1318047A (en) Insulated gate field effect transistors
KR890016628A (ko) 반도체 소자
JPS54149481A (en) Two-way voltage selecting switching element

Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee