|
US5247223A
(en)
*
|
1990-06-30 |
1993-09-21 |
Sony Corporation |
Quantum interference semiconductor device
|
|
JPH0547296A
(ja)
*
|
1991-08-14 |
1993-02-26 |
Sharp Corp |
電界放出型電子源及びその製造方法
|
|
US5536193A
(en)
|
1991-11-07 |
1996-07-16 |
Microelectronics And Computer Technology Corporation |
Method of making wide band gap field emitter
|
|
US5371431A
(en)
*
|
1992-03-04 |
1994-12-06 |
Mcnc |
Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions
|
|
US5543684A
(en)
*
|
1992-03-16 |
1996-08-06 |
Microelectronics And Computer Technology Corporation |
Flat panel display based on diamond thin films
|
|
US5675216A
(en)
|
1992-03-16 |
1997-10-07 |
Microelectronics And Computer Technololgy Corp. |
Amorphic diamond film flat field emission cathode
|
|
US5679043A
(en)
|
1992-03-16 |
1997-10-21 |
Microelectronics And Computer Technology Corporation |
Method of making a field emitter
|
|
US5763997A
(en)
|
1992-03-16 |
1998-06-09 |
Si Diamond Technology, Inc. |
Field emission display device
|
|
US5686791A
(en)
|
1992-03-16 |
1997-11-11 |
Microelectronics And Computer Technology Corp. |
Amorphic diamond film flat field emission cathode
|
|
US6127773A
(en)
|
1992-03-16 |
2000-10-03 |
Si Diamond Technology, Inc. |
Amorphic diamond film flat field emission cathode
|
|
US5449970A
(en)
|
1992-03-16 |
1995-09-12 |
Microelectronics And Computer Technology Corporation |
Diode structure flat panel display
|
|
US5319233A
(en)
*
|
1992-05-13 |
1994-06-07 |
Motorola, Inc. |
Field emission device employing a layer of single-crystal silicon
|
|
CA2152472A1
(en)
*
|
1992-12-23 |
1994-07-07 |
Nalin Kumar |
Triode structure flat panel display employing flat field emission cathodes
|
|
US5965971A
(en)
*
|
1993-01-19 |
1999-10-12 |
Kypwee Display Corporation |
Edge emitter display device
|
|
AU5897594A
(en)
*
|
1993-06-02 |
1994-12-20 |
Microelectronics And Computer Technology Corporation |
Amorphic diamond film flat field emission cathode
|
|
US5559389A
(en)
*
|
1993-09-08 |
1996-09-24 |
Silicon Video Corporation |
Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
|
|
US5564959A
(en)
*
|
1993-09-08 |
1996-10-15 |
Silicon Video Corporation |
Use of charged-particle tracks in fabricating gated electron-emitting devices
|
|
US5462467A
(en)
*
|
1993-09-08 |
1995-10-31 |
Silicon Video Corporation |
Fabrication of filamentary field-emission device, including self-aligned gate
|
|
US7025892B1
(en)
|
1993-09-08 |
2006-04-11 |
Candescent Technologies Corporation |
Method for creating gated filament structures for field emission displays
|
|
JP2699827B2
(ja)
*
|
1993-09-27 |
1998-01-19 |
双葉電子工業株式会社 |
電界放出カソード素子
|
|
US5466982A
(en)
*
|
1993-10-18 |
1995-11-14 |
Honeywell Inc. |
Comb toothed field emitter structure having resistive and capacitive coupled input
|
|
JP2743794B2
(ja)
*
|
1993-10-25 |
1998-04-22 |
双葉電子工業株式会社 |
電界放出カソード及び電界放出カソードの製造方法
|
|
EP0727057A4
(de)
|
1993-11-04 |
1997-08-13 |
Microelectronics & Computer |
Verfahren zur herstellung von flachtafelanzeigesystemen und -komponenten
|
|
US5786659A
(en)
*
|
1993-11-29 |
1998-07-28 |
Futaba Denshi Kogyo K.K. |
Field emission type electron source
|
|
JP2809078B2
(ja)
*
|
1993-12-28 |
1998-10-08 |
日本電気株式会社 |
電界放出冷陰極およびその製造方法
|
|
FR2717304B1
(fr)
*
|
1994-03-09 |
1996-04-05 |
Commissariat Energie Atomique |
Source d'électrons à cathodes émissives à micropointes.
|
|
US5550426A
(en)
*
|
1994-06-30 |
1996-08-27 |
Motorola |
Field emission device
|
|
FR2722913B1
(fr)
*
|
1994-07-21 |
1996-10-11 |
Pixel Int Sa |
Cathode a micropointes pour ecran plat
|
|
US5698933A
(en)
*
|
1994-07-25 |
1997-12-16 |
Motorola, Inc. |
Field emission device current control apparatus and method
|
|
DE69513581T2
(de)
*
|
1994-08-01 |
2000-09-07 |
Motorola, Inc. |
Bogen-Unterdrückungsvorrichtung für eine Feldemissionsvorrichtung
|
|
US6204834B1
(en)
|
1994-08-17 |
2001-03-20 |
Si Diamond Technology, Inc. |
System and method for achieving uniform screen brightness within a matrix display
|
|
EP0700063A1
(de)
*
|
1994-08-31 |
1996-03-06 |
International Business Machines Corporation |
Aufbau und Verfahren zur Herstellung einer Feldemissionsanordnung
|
|
US5531880A
(en)
*
|
1994-09-13 |
1996-07-02 |
Microelectronics And Computer Technology Corporation |
Method for producing thin, uniform powder phosphor for display screens
|
|
US5496200A
(en)
*
|
1994-09-14 |
1996-03-05 |
United Microelectronics Corporation |
Sealed vacuum electronic devices
|
|
US6417605B1
(en)
|
1994-09-16 |
2002-07-09 |
Micron Technology, Inc. |
Method of preventing junction leakage in field emission devices
|
|
US5528108A
(en)
*
|
1994-09-22 |
1996-06-18 |
Motorola |
Field emission device arc-suppressor
|
|
US5528098A
(en)
*
|
1994-10-06 |
1996-06-18 |
Motorola |
Redundant conductor electron source
|
|
US5541466A
(en)
*
|
1994-11-18 |
1996-07-30 |
Texas Instruments Incorporated |
Cluster arrangement of field emission microtips on ballast layer
|
|
US5536993A
(en)
*
|
1994-11-18 |
1996-07-16 |
Texas Instruments Incorporated |
Clustered field emission microtips adjacent stripe conductors
|
|
US5569975A
(en)
*
|
1994-11-18 |
1996-10-29 |
Texas Instruments Incorporated |
Cluster arrangement of field emission microtips
|
|
US5557159A
(en)
*
|
1994-11-18 |
1996-09-17 |
Texas Instruments Incorporated |
Field emission microtip clusters adjacent stripe conductors
|
|
US5644187A
(en)
*
|
1994-11-25 |
1997-07-01 |
Motorola |
Collimating extraction grid conductor and method
|
|
US5578896A
(en)
*
|
1995-04-10 |
1996-11-26 |
Industrial Technology Research Institute |
Cold cathode field emission display and method for forming it
|
|
US5628659A
(en)
*
|
1995-04-24 |
1997-05-13 |
Microelectronics And Computer Corporation |
Method of making a field emission electron source with random micro-tip structures
|
|
US6296740B1
(en)
|
1995-04-24 |
2001-10-02 |
Si Diamond Technology, Inc. |
Pretreatment process for a surface texturing process
|
|
US5591352A
(en)
*
|
1995-04-27 |
1997-01-07 |
Industrial Technology Research Institute |
High resolution cold cathode field emission display method
|
|
US5552677A
(en)
*
|
1995-05-01 |
1996-09-03 |
Motorola |
Method and control circuit precharging a plurality of columns prior to enabling a row of a display
|
|
US5631518A
(en)
*
|
1995-05-02 |
1997-05-20 |
Motorola |
Electron source having short-avoiding extraction electrode and method of making same
|
|
US5691600A
(en)
*
|
1995-06-08 |
1997-11-25 |
Motorola |
Edge electron emitters for an array of FEDS
|
|
US5585301A
(en)
*
|
1995-07-14 |
1996-12-17 |
Micron Display Technology, Inc. |
Method for forming high resistance resistors for limiting cathode current in field emission displays
|
|
DE69607356T2
(de)
*
|
1995-08-04 |
2000-12-07 |
Printable Field Emitters Ltd., Hartlepool |
Feldelektronenemitterende materialen und vorrichtungen
|
|
US6192324B1
(en)
|
1995-08-14 |
2001-02-20 |
General Motors Corporation |
On-board diagnosis of emissions from catalytic converters
|
|
US5844351A
(en)
*
|
1995-08-24 |
1998-12-01 |
Fed Corporation |
Field emitter device, and veil process for THR fabrication thereof
|
|
US5688158A
(en)
*
|
1995-08-24 |
1997-11-18 |
Fed Corporation |
Planarizing process for field emitter displays and other electron source applications
|
|
US5828288A
(en)
*
|
1995-08-24 |
1998-10-27 |
Fed Corporation |
Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
|
|
US5731660A
(en)
|
1995-12-18 |
1998-03-24 |
Motorola, Inc. |
Flat panel display spacer structure
|
|
US6031250A
(en)
*
|
1995-12-20 |
2000-02-29 |
Advanced Technology Materials, Inc. |
Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
|
|
US6680489B1
(en)
|
1995-12-20 |
2004-01-20 |
Advanced Technology Materials, Inc. |
Amorphous silicon carbide thin film coating
|
|
US5633561A
(en)
*
|
1996-03-28 |
1997-05-27 |
Motorola |
Conductor array for a flat panel display
|
|
JP2970539B2
(ja)
*
|
1996-06-27 |
1999-11-02 |
日本電気株式会社 |
電界放出型陰極およびこれを用いた陰極線管
|
|
JP3026484B2
(ja)
*
|
1996-08-23 |
2000-03-27 |
日本電気株式会社 |
電界放出型冷陰極
|
|
US6013986A
(en)
*
|
1997-06-30 |
2000-01-11 |
Candescent Technologies Corporation |
Electron-emitting device having multi-layer resistor
|
|
RU2187860C2
(ru)
*
|
1997-07-01 |
2002-08-20 |
Галдецкий Анатолий Васильевич |
Автоэмиссионный катод и электронный прибор на его основе (варианты)
|
|
US6144144A
(en)
*
|
1997-10-31 |
2000-11-07 |
Candescent Technologies Corporation |
Patterned resistor suitable for electron-emitting device
|
|
US6710538B1
(en)
|
1998-08-26 |
2004-03-23 |
Micron Technology, Inc. |
Field emission display having reduced power requirements and method
|
|
US6420826B1
(en)
*
|
2000-01-03 |
2002-07-16 |
The Regents Of The University Of California |
Flat panel display using Ti-Cr-Al-O thin film
|
|
US6611093B1
(en)
|
2000-09-19 |
2003-08-26 |
Display Research Laboratories, Inc. |
Field emission display with transparent cathode
|
|
US6835947B2
(en)
*
|
2002-01-31 |
2004-12-28 |
Hewlett-Packard Development Company, L.P. |
Emitter and method of making
|
|
US6703252B2
(en)
|
2002-01-31 |
2004-03-09 |
Hewlett-Packard Development Company, L.P. |
Method of manufacturing an emitter
|
|
US6852554B2
(en)
|
2002-02-27 |
2005-02-08 |
Hewlett-Packard Development Company, L.P. |
Emission layer formed by rapid thermal formation process
|
|
US6787792B2
(en)
|
2002-04-18 |
2004-09-07 |
Hewlett-Packard Development Company, L.P. |
Emitter with filled zeolite emission layer
|
|
US7170223B2
(en)
|
2002-07-17 |
2007-01-30 |
Hewlett-Packard Development Company, L.P. |
Emitter with dielectric layer having implanted conducting centers
|
|
US8814622B1
(en)
|
2011-11-17 |
2014-08-26 |
Sandia Corporation |
Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode
|
|
US9711392B2
(en)
*
|
2012-07-25 |
2017-07-18 |
Infineon Technologies Ag |
Field emission devices and methods of making thereof
|