ATE166183T1 - Gallium-arsenid-mesfet-bildaufnehmer - Google Patents

Gallium-arsenid-mesfet-bildaufnehmer

Info

Publication number
ATE166183T1
ATE166183T1 AT92920928T AT92920928T ATE166183T1 AT E166183 T1 ATE166183 T1 AT E166183T1 AT 92920928 T AT92920928 T AT 92920928T AT 92920928 T AT92920928 T AT 92920928T AT E166183 T1 ATE166183 T1 AT E166183T1
Authority
AT
Austria
Prior art keywords
pct
source
field effect
effect transistor
gallium arsenide
Prior art date
Application number
AT92920928T
Other languages
English (en)
Inventor
Kamran Eshraghian
Derek Abbott
Original Assignee
Luminis Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luminis Pty Ltd filed Critical Luminis Pty Ltd
Application granted granted Critical
Publication of ATE166183T1 publication Critical patent/ATE166183T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AT92920928T 1991-09-30 1992-09-25 Gallium-arsenid-mesfet-bildaufnehmer ATE166183T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
AUPK866091 1991-09-30

Publications (1)

Publication Number Publication Date
ATE166183T1 true ATE166183T1 (de) 1998-05-15

Family

ID=3775726

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92920928T ATE166183T1 (de) 1991-09-30 1992-09-25 Gallium-arsenid-mesfet-bildaufnehmer

Country Status (6)

Country Link
US (1) US5500522A (de)
EP (1) EP0606350B1 (de)
JP (1) JPH06511111A (de)
AT (1) ATE166183T1 (de)
DE (1) DE69225488T2 (de)
WO (1) WO1993007643A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020097446A1 (en) * 2001-01-25 2002-07-25 Umax Data Systems Inc. Apparatus and method for dark calibration of a linear CMOS sensor
EP1492126A1 (de) * 2003-06-27 2004-12-29 Dialog Semiconductor GmbH DRAM-Zelle mit natürlichem Transistor für analoge oder vielfache Pegel
US10128365B2 (en) 2016-03-17 2018-11-13 Cree, Inc. Bypassed gate transistors having improved stability
US12464760B2 (en) 2016-03-17 2025-11-04 Macom Technology Solutions Holdings, Inc. Bypassed gate transistors having improved stability
WO2018204622A1 (en) * 2017-05-05 2018-11-08 Cree, Inc. High power mmic devices having bypassed gate transistors
US10763334B2 (en) 2018-07-11 2020-09-01 Cree, Inc. Drain and/or gate interconnect and finger structure
US10483352B1 (en) * 2018-07-11 2019-11-19 Cree, Inc. High power transistor with interior-fed gate fingers
US10600746B2 (en) 2018-07-19 2020-03-24 Cree, Inc. Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors
US10770415B2 (en) 2018-12-04 2020-09-08 Cree, Inc. Packaged transistor devices with input-output isolation and methods of forming packaged transistor devices with input-output isolation
US11417746B2 (en) 2019-04-24 2022-08-16 Wolfspeed, Inc. High power transistor with interior-fed fingers

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5984467A (ja) * 1982-11-06 1984-05-16 Mitsubishi Electric Corp モノリシツク赤外線電荷転送素子
US4618024A (en) * 1983-02-28 1986-10-21 Amoco Corporation Moving seismic source system for use in water-covered areas
JPS6037768A (ja) * 1983-08-10 1985-02-27 Mitsubishi Electric Corp 電荷転送素子
US4772931A (en) * 1986-07-08 1988-09-20 Ibm Corporation Interdigitated Schottky barrier photodetector
JPH0715979B2 (ja) * 1987-08-27 1995-02-22 三菱電機株式会社 超格子撮像素子
JPH081949B2 (ja) * 1989-05-30 1996-01-10 三菱電機株式会社 赤外線撮像装置及びその製造方法
US5047821A (en) * 1990-03-15 1991-09-10 Intevac, Inc. Transferred electron III-V semiconductor photocathode
US5182624A (en) * 1990-08-08 1993-01-26 Minnesota Mining And Manufacturing Company Solid state electromagnetic radiation detector fet array

Also Published As

Publication number Publication date
EP0606350A4 (de) 1994-11-17
DE69225488T2 (de) 1999-02-04
DE69225488D1 (de) 1998-06-18
JPH06511111A (ja) 1994-12-08
EP0606350B1 (de) 1998-05-13
US5500522A (en) 1996-03-19
EP0606350A1 (de) 1994-07-20
WO1993007643A1 (en) 1993-04-15

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