ATE170668T1 - Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung - Google Patents

Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung

Info

Publication number
ATE170668T1
ATE170668T1 AT95918347T AT95918347T ATE170668T1 AT E170668 T1 ATE170668 T1 AT E170668T1 AT 95918347 T AT95918347 T AT 95918347T AT 95918347 T AT95918347 T AT 95918347T AT E170668 T1 ATE170668 T1 AT E170668T1
Authority
AT
Austria
Prior art keywords
silicon carbide
termination region
voltage
production
single crystal
Prior art date
Application number
AT95918347T
Other languages
English (en)
Inventor
Bantval Jayant Baliga
Dev Alok
Original Assignee
Univ North Carolina State
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ North Carolina State filed Critical Univ North Carolina State
Application granted granted Critical
Publication of ATE170668T1 publication Critical patent/ATE170668T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT95918347T 1994-05-04 1995-05-02 Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung ATE170668T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/238,228 US5449925A (en) 1994-05-04 1994-05-04 Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices

Publications (1)

Publication Number Publication Date
ATE170668T1 true ATE170668T1 (de) 1998-09-15

Family

ID=22896999

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95918347T ATE170668T1 (de) 1994-05-04 1995-05-02 Spannungsdurchbruchfeste halbleiterbauelemente aus einkristall-siliziumkarbid und verfahren zu deren herstellung

Country Status (7)

Country Link
US (2) US5449925A (de)
EP (1) EP0758489B1 (de)
JP (1) JP3732857B2 (de)
AT (1) ATE170668T1 (de)
AU (1) AU2431395A (de)
DE (1) DE69504495T2 (de)
WO (1) WO1995031009A1 (de)

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US6229193B1 (en) * 1998-04-06 2001-05-08 California Institute Of Technology Multiple stage high power diode
US6023078A (en) * 1998-04-28 2000-02-08 North Carolina State University Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability
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DE19925233A1 (de) * 1998-06-08 1999-12-09 Siemens Ag Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung
US6281521B1 (en) 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
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US6373076B1 (en) 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6303508B1 (en) 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
US6407014B1 (en) 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
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US6797586B2 (en) * 2001-06-28 2004-09-28 Koninklijke Philips Electronics N.V. Silicon carbide schottky barrier diode and method of making
US6552363B2 (en) 2001-09-18 2003-04-22 International Rectifier Corporation Polysilicon FET built on silicon carbide diode substrate
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US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
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CN1802755B (zh) * 2003-05-09 2012-05-16 克里公司 通过离子注入进行隔离的led制造方法
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7229866B2 (en) * 2004-03-15 2007-06-12 Velox Semiconductor Corporation Non-activated guard ring for semiconductor devices
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
WO2007029375A1 (ja) * 2005-09-08 2007-03-15 Mitsubishi Denki Kabushiki Kaisha 半導体装置および半導体装置の製造方法
CN101390223B (zh) * 2005-10-24 2012-02-01 劳伦斯利弗莫尔国家安全有限公司 光激发碳化硅高压开关
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US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
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US7662698B2 (en) * 2006-11-07 2010-02-16 Raytheon Company Transistor having field plate
US9337268B2 (en) * 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
KR20130049919A (ko) * 2011-11-07 2013-05-15 현대자동차주식회사 실리콘카바이드 쇼트키 배리어 다이오드 소자 및 이의 제조 방법
KR101427948B1 (ko) * 2012-12-18 2014-08-08 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP2014146748A (ja) * 2013-01-30 2014-08-14 Toshiba Corp 半導体装置及びその製造方法並びに半導体基板
US9257327B2 (en) 2013-04-09 2016-02-09 Samsung Electronics Co., Ltd. Methods of forming a Field Effect Transistor, including forming a region providing enhanced oxidation
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US10608079B2 (en) * 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
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Also Published As

Publication number Publication date
AU2431395A (en) 1995-11-29
US5635412A (en) 1997-06-03
JPH10501097A (ja) 1998-01-27
WO1995031009A1 (en) 1995-11-16
US5449925A (en) 1995-09-12
JP3732857B2 (ja) 2006-01-11
EP0758489B1 (de) 1998-09-02
EP0758489A1 (de) 1997-02-19
DE69504495T2 (de) 1999-04-15
DE69504495D1 (de) 1998-10-08

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