ATE171565T1 - Struktur zur vermeidung des durchschaltens einer parasitären diode, die sich in einer epitaktischen wanne von integrierten schaltungen befindet - Google Patents

Struktur zur vermeidung des durchschaltens einer parasitären diode, die sich in einer epitaktischen wanne von integrierten schaltungen befindet

Info

Publication number
ATE171565T1
ATE171565T1 AT92830338T AT92830338T ATE171565T1 AT E171565 T1 ATE171565 T1 AT E171565T1 AT 92830338 T AT92830338 T AT 92830338T AT 92830338 T AT92830338 T AT 92830338T AT E171565 T1 ATE171565 T1 AT E171565T1
Authority
AT
Austria
Prior art keywords
resistor
parasitic diode
terminal
epitactic
tell
Prior art date
Application number
AT92830338T
Other languages
English (en)
Inventor
Marco Demicheli
Alberto Gola
Original Assignee
St Microelectronics Srl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by St Microelectronics Srl filed Critical St Microelectronics Srl
Application granted granted Critical
Publication of ATE171565T1 publication Critical patent/ATE171565T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT92830338T 1992-06-30 1992-06-30 Struktur zur vermeidung des durchschaltens einer parasitären diode, die sich in einer epitaktischen wanne von integrierten schaltungen befindet ATE171565T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830338A EP0577906B1 (de) 1992-06-30 1992-06-30 Struktur zur Vermeidung des Durchschaltens einer parasitären Diode, die sich in einer epitaktischen Wanne von integrierten Schaltungen befindet

Publications (1)

Publication Number Publication Date
ATE171565T1 true ATE171565T1 (de) 1998-10-15

Family

ID=8212130

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92830338T ATE171565T1 (de) 1992-06-30 1992-06-30 Struktur zur vermeidung des durchschaltens einer parasitären diode, die sich in einer epitaktischen wanne von integrierten schaltungen befindet

Country Status (5)

Country Link
US (1) US5300805A (de)
EP (1) EP0577906B1 (de)
JP (1) JP3179630B2 (de)
AT (1) ATE171565T1 (de)
DE (1) DE69227106T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475340A (en) * 1994-05-23 1995-12-12 Delco Electronics Corporation Active biasing circuit for an epitaxial region in a fault-tolerant, vertical pnp output transistor
US5895960A (en) * 1996-09-03 1999-04-20 Lucent Technologies Inc. Thin oxide mask level defined resistor
US5984746A (en) 1996-12-12 1999-11-16 Micron Technology, Inc. Attaching spacers in a display device
JP3372923B2 (ja) * 2000-02-25 2003-02-04 エヌイーシーマイクロシステム株式会社 半導体集積回路
JP4610786B2 (ja) * 2001-02-20 2011-01-12 三菱電機株式会社 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit
EP0109996B1 (de) * 1982-11-26 1987-06-03 International Business Machines Corporation Widerstandsanordnung mit Selbstvorspannung und Anwendung zur Herstellung von Schnittstellenschaltungen
IT1215402B (it) * 1987-03-31 1990-02-08 Sgs Microelettronica Spa Circuito integrato di pilotaggio di carichi induttivi riferiti a terra.
FR2624655B1 (fr) * 1987-12-14 1990-05-11 Sgs Thomson Microelectronics Structure de protection d'un acces a un circuit integre
US5051612A (en) * 1989-02-10 1991-09-24 Texas Instruments Incorporated Prevention of parasitic mechanisms in junction isolated devices

Also Published As

Publication number Publication date
DE69227106D1 (de) 1998-10-29
EP0577906B1 (de) 1998-09-23
US5300805A (en) 1994-04-05
DE69227106T2 (de) 1999-04-01
JPH06163817A (ja) 1994-06-10
EP0577906A1 (de) 1994-01-12
JP3179630B2 (ja) 2001-06-25

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