ATE178168T1 - Verfahren und laservorrichtung zur optischen nachrichten-übertragung - Google Patents

Verfahren und laservorrichtung zur optischen nachrichten-übertragung

Info

Publication number
ATE178168T1
ATE178168T1 AT96917539T AT96917539T ATE178168T1 AT E178168 T1 ATE178168 T1 AT E178168T1 AT 96917539 T AT96917539 T AT 96917539T AT 96917539 T AT96917539 T AT 96917539T AT E178168 T1 ATE178168 T1 AT E178168T1
Authority
AT
Austria
Prior art keywords
pct
date nov
sec
optical fibre
laser device
Prior art date
Application number
AT96917539T
Other languages
English (en)
Inventor
Antoine Labeyrie
Original Assignee
Antoine Labeyrie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Antoine Labeyrie filed Critical Antoine Labeyrie
Application granted granted Critical
Publication of ATE178168T1 publication Critical patent/ATE178168T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/18352—Mesa with inclined sidewall
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Radar Systems Or Details Thereof (AREA)
AT96917539T 1995-05-23 1996-05-23 Verfahren und laservorrichtung zur optischen nachrichten-übertragung ATE178168T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9506104A FR2734676B1 (fr) 1995-05-23 1995-05-23 Procede et dispositifs d'emission ou reception laser pour la transmission d'informations par voie optique

Publications (1)

Publication Number Publication Date
ATE178168T1 true ATE178168T1 (de) 1999-04-15

Family

ID=9479274

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96917539T ATE178168T1 (de) 1995-05-23 1996-05-23 Verfahren und laservorrichtung zur optischen nachrichten-übertragung

Country Status (8)

Country Link
US (1) US6044102A (de)
EP (1) EP0827640B1 (de)
JP (1) JPH11505960A (de)
AT (1) ATE178168T1 (de)
AU (1) AU6007696A (de)
DE (1) DE69601869T2 (de)
FR (1) FR2734676B1 (de)
WO (1) WO1996037933A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3387102B2 (ja) 1997-08-11 2003-03-17 セイコーエプソン株式会社 面発光型半導体レーザ及びその製造方法
US20020191254A1 (en) * 2001-06-19 2002-12-19 Robert Mays Network routing employing free-space optical broadcasting
US7405948B2 (en) * 2003-01-22 2008-07-29 Nec Corporation Circuit board device and method of interconnecting wiring boards
US6815974B1 (en) 2003-07-14 2004-11-09 Semiconductor Diagnostics, Inc. Determining composition of mixed dielectrics
FR2879287B1 (fr) * 2004-12-15 2007-03-16 Univ Grenoble 1 Detecteur et camera speectroscopiques interferentiels
EP2434594B1 (de) * 2010-09-27 2014-05-14 Alcatel Lucent Photonische integrierte Schaltung für Wellenlängenmultiplex-Verfahren
GB2543806A (en) * 2015-10-29 2017-05-03 Airbus Operations Ltd Communication apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
US5497253A (en) * 1988-07-18 1996-03-05 Northrop Grumman Corporation Multi-layer opto-electronic neural network
US4873696A (en) * 1988-10-31 1989-10-10 The Regents Of The University Of California Surface-emitting lasers with periodic gain and a parallel driven nipi structure
FR2639773B1 (fr) * 1988-11-25 1994-05-13 Alcatel Nv Laser a semi-conducteur accordable
FR2711856B1 (fr) * 1993-10-29 1995-11-24 Bouley Jean Claude Dispositif laser à émission de surface.
FR2713350B1 (fr) * 1993-12-06 1995-12-29 Franck Delorme Composant optique à pluralité de réseaux de bragg et procédé de fabrication de ce composant.
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication

Also Published As

Publication number Publication date
EP0827640A1 (de) 1998-03-11
US6044102A (en) 2000-03-28
FR2734676A1 (fr) 1996-11-29
WO1996037933A1 (fr) 1996-11-28
AU6007696A (en) 1996-12-11
FR2734676B1 (fr) 1997-08-08
DE69601869D1 (de) 1999-04-29
EP0827640B1 (de) 1999-03-24
DE69601869T2 (de) 1999-10-14
JPH11505960A (ja) 1999-05-25

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Legal Events

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