ATE181155T1 - Herstellungsverfahren fur ein halbleiterelement und detektor mit einem solchen halbleiterelement - Google Patents

Herstellungsverfahren fur ein halbleiterelement und detektor mit einem solchen halbleiterelement

Info

Publication number
ATE181155T1
ATE181155T1 AT94925455T AT94925455T ATE181155T1 AT E181155 T1 ATE181155 T1 AT E181155T1 AT 94925455 T AT94925455 T AT 94925455T AT 94925455 T AT94925455 T AT 94925455T AT E181155 T1 ATE181155 T1 AT E181155T1
Authority
AT
Austria
Prior art keywords
semiconductor element
pct
date
detector
production method
Prior art date
Application number
AT94925455T
Other languages
English (en)
Inventor
Haan Andre De
Original Assignee
Haan Andre
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Haan Andre filed Critical Haan Andre
Application granted granted Critical
Publication of ATE181155T1 publication Critical patent/ATE181155T1/de

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
    • G01N27/126—Composition of the body, e.g. the composition of its sensitive layer comprising organic polymers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Bipolar Transistors (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
AT94925455T 1993-08-13 1994-08-11 Herstellungsverfahren fur ein halbleiterelement und detektor mit einem solchen halbleiterelement ATE181155T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP9302162 1993-08-13

Publications (1)

Publication Number Publication Date
ATE181155T1 true ATE181155T1 (de) 1999-06-15

Family

ID=8165753

Family Applications (1)

Application Number Title Priority Date Filing Date
AT94925455T ATE181155T1 (de) 1993-08-13 1994-08-11 Herstellungsverfahren fur ein halbleiterelement und detektor mit einem solchen halbleiterelement

Country Status (10)

Country Link
US (1) US5726347A (de)
EP (1) EP0713577B1 (de)
JP (1) JPH09508965A (de)
AT (1) ATE181155T1 (de)
AU (1) AU7536094A (de)
CA (1) CA2169479C (de)
DE (1) DE69419020T2 (de)
DK (1) DK0713577T3 (de)
ES (1) ES2134952T3 (de)
WO (1) WO1995005595A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4445359A1 (de) * 1994-12-20 1996-06-27 Bosch Gmbh Robert Sensor zum Nachweis von brennbaren Gasen
BE1010571A3 (fr) * 1996-08-19 1998-10-06 Haan Andre Procede de fabrication d'un element forme de semi-conducteur(s).
DE19749341C2 (de) * 1996-11-07 2003-02-13 Honda Motor Co Ltd NO¶x¶-Abgassensor und Verfahren zu dessen Herstellung
DE10122659A1 (de) * 2001-05-10 2002-12-05 Infineon Technologies Ag Biochip-Anordnung
US7193237B2 (en) 2002-03-27 2007-03-20 Mitsubishi Chemical Corporation Organic semiconductor material and organic electronic device
RU2231052C1 (ru) * 2002-10-07 2004-06-20 Вологодский государственный технический университет Способ изготовления тонкопленочного датчика для определения концентрации метана в газовой среде
US20090037302A1 (en) * 2006-09-27 2009-02-05 Rockwell Automation Technologies, Inc. Programmatically scheduled verification
CA2666560A1 (fr) * 2006-10-19 2008-04-24 Societe De Chimie Inorganique Et Organique En Abrege "Sochinor" Capteur de gaz emis par une combustion
JP6753844B2 (ja) * 2014-09-12 2020-09-09 日東電工株式会社 多原子価半導体光触媒材料
KR102158794B1 (ko) * 2019-12-31 2020-09-22 서울대학교산학협력단 방사선 검사 및 초음파 검사에 사용하기 위한 다목적 조영제

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3732519A (en) * 1970-09-23 1973-05-08 N Taguchi Semiconductor gas detecting device
JPS5039998A (de) * 1973-08-14 1975-04-12
LU76937A1 (de) * 1977-03-11 1978-10-18
US4313338A (en) * 1978-08-18 1982-02-02 Matsushita Electric Industrial Co., Ltd. Gas sensing device
US4453151A (en) * 1982-06-07 1984-06-05 Leary David J Semiconductor gas sensor
DE3318672A1 (de) * 1983-05-21 1984-11-22 Karl Dungs Gmbh & Co, 7067 Urbach Verfahren zur messung des sauerstoffpartialdruckes in gasen
US5248617A (en) * 1988-03-21 1993-09-28 Haan Andre P De Processes and apparatus for detecting the nature of combustion gases
DE69326199T2 (de) * 1992-01-10 2000-03-23 Mikuni Corp., Tokio/Tokyo Gassensor und seine herstellung
DE4244723C2 (de) * 1992-01-27 1995-09-07 Roth Technik Gmbh Sauerstoffsensor auf der Basis komplexer Metalloxide

Also Published As

Publication number Publication date
AU7536094A (en) 1995-03-14
ES2134952T3 (es) 1999-10-16
CA2169479A1 (en) 1995-02-23
JPH09508965A (ja) 1997-09-09
EP0713577A1 (de) 1996-05-29
DK0713577T3 (da) 1999-12-27
DE69419020T2 (de) 2000-03-02
WO1995005595A1 (fr) 1995-02-23
DE69419020D1 (de) 1999-07-15
EP0713577B1 (de) 1999-06-09
US5726347A (en) 1998-03-10
CA2169479C (en) 2004-11-30

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