ATE192197T1 - Vorrichtung und verfahren zur beschichtung - Google Patents

Vorrichtung und verfahren zur beschichtung

Info

Publication number
ATE192197T1
ATE192197T1 AT92924773T AT92924773T ATE192197T1 AT E192197 T1 ATE192197 T1 AT E192197T1 AT 92924773 T AT92924773 T AT 92924773T AT 92924773 T AT92924773 T AT 92924773T AT E192197 T1 ATE192197 T1 AT E192197T1
Authority
AT
Austria
Prior art keywords
pct
electrode
sec
control unit
stress control
Prior art date
Application number
AT92924773T
Other languages
English (en)
Inventor
Christopher Dobson
Adrian Kiermasz
Knut Beekmann
Christine Stanley Shearer
Edmond Ling
Alan Winn
Rob Wilby
Original Assignee
Trikon Equip Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Equip Ltd filed Critical Trikon Equip Ltd
Application granted granted Critical
Publication of ATE192197T1 publication Critical patent/ATE192197T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3328—Problems associated with coating adhesion, stress, lift-off of deposited films

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Luminescent Compositions (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
AT92924773T 1991-12-04 1992-12-02 Vorrichtung und verfahren zur beschichtung ATE192197T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB919125771A GB9125771D0 (en) 1991-12-04 1991-12-04 Deposition apparatus and methods
PCT/GB1992/002238 WO1993011276A1 (en) 1991-12-04 1992-12-02 Deposition apparatus and methods

Publications (1)

Publication Number Publication Date
ATE192197T1 true ATE192197T1 (de) 2000-05-15

Family

ID=10705675

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92924773T ATE192197T1 (de) 1991-12-04 1992-12-02 Vorrichtung und verfahren zur beschichtung

Country Status (8)

Country Link
US (1) US5492737A (de)
EP (1) EP0650536B1 (de)
JP (1) JP3392415B2 (de)
AT (1) ATE192197T1 (de)
CA (1) CA2124215A1 (de)
DE (1) DE69230974T2 (de)
GB (1) GB9125771D0 (de)
WO (1) WO1993011276A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4445177C5 (de) 1994-11-22 2015-09-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung mikromechanischer Bauelemente mit freistehenden Mikrostrukturen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3123427C2 (de) * 1981-06-12 1985-10-24 Siemens AG, 1000 Berlin und 8000 München Anordnung zum Messen des elektrischen Widerstandes und der Temperatur von durch Aufdampfen oder Aufstäuben auf Substraten abgeschiedenen dünnen, metallischleitenden Schichten während der Schichtherstellung
JPH062939B2 (ja) * 1982-03-16 1994-01-12 松下電器産業株式会社 薄膜生成方法
JPS60197875A (ja) * 1984-03-19 1985-10-07 Ulvac Corp スパツタ装置用自動成膜制御装置
JPS62243765A (ja) * 1986-04-15 1987-10-24 Sumitomo Heavy Ind Ltd 薄膜形成時における残留応力緩和方法
JPS63317676A (ja) * 1987-06-19 1988-12-26 Sharp Corp 無粒構造金属化合物薄膜の製造方法
CA2014540A1 (en) * 1989-04-18 1990-10-18 Mitsui Toatsu Chemicals, Inc. Method for forming semiconductor thin film

Also Published As

Publication number Publication date
US5492737A (en) 1996-02-20
JPH07501583A (ja) 1995-02-16
WO1993011276A1 (en) 1993-06-10
GB9125771D0 (en) 1992-02-05
JP3392415B2 (ja) 2003-03-31
DE69230974T2 (de) 2000-10-19
EP0650536B1 (de) 2000-04-26
CA2124215A1 (en) 1993-06-10
DE69230974D1 (de) 2000-05-31
EP0650536A1 (de) 1995-05-03

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