ATE196036T1 - Nichtflüchtige pmos-speicheranordnung mit einer einzigen polysiliziumschicht - Google Patents

Nichtflüchtige pmos-speicheranordnung mit einer einzigen polysiliziumschicht

Info

Publication number
ATE196036T1
ATE196036T1 AT96308360T AT96308360T ATE196036T1 AT E196036 T1 ATE196036 T1 AT E196036T1 AT 96308360 T AT96308360 T AT 96308360T AT 96308360 T AT96308360 T AT 96308360T AT E196036 T1 ATE196036 T1 AT E196036T1
Authority
AT
Austria
Prior art keywords
floating gate
gate
cell
type diffusion
well
Prior art date
Application number
AT96308360T
Other languages
English (en)
Inventor
Shang-De T Chang
Original Assignee
Programmable Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/560,249 external-priority patent/US5736764A/en
Priority claimed from US08/577,405 external-priority patent/US5841165A/en
Priority claimed from US08/744,699 external-priority patent/US5761121A/en
Application filed by Programmable Microelectronics filed Critical Programmable Microelectronics
Application granted granted Critical
Publication of ATE196036T1 publication Critical patent/ATE196036T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
AT96308360T 1995-11-21 1996-11-19 Nichtflüchtige pmos-speicheranordnung mit einer einzigen polysiliziumschicht ATE196036T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/560,249 US5736764A (en) 1995-11-21 1995-11-21 PMOS flash EEPROM cell with single poly
US08/577,405 US5841165A (en) 1995-11-21 1995-12-22 PMOS flash EEPROM cell with single poly
US08/744,699 US5761121A (en) 1996-10-31 1996-10-31 PMOS single-poly non-volatile memory structure

Publications (1)

Publication Number Publication Date
ATE196036T1 true ATE196036T1 (de) 2000-09-15

Family

ID=27415820

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96308360T ATE196036T1 (de) 1995-11-21 1996-11-19 Nichtflüchtige pmos-speicheranordnung mit einer einzigen polysiliziumschicht

Country Status (5)

Country Link
EP (1) EP0776049B1 (de)
JP (1) JP2951605B2 (de)
KR (1) KR100306670B1 (de)
AT (1) ATE196036T1 (de)
DE (2) DE776049T1 (de)

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US5986931A (en) * 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
US6054732A (en) * 1997-02-11 2000-04-25 Texas Instruments Incorporated Single polysilicon flash EEPROM with low positive programming and erasing voltage and small cell size
US5896315A (en) * 1997-04-11 1999-04-20 Programmable Silicon Solutions Nonvolatile memory
FR2767219B1 (fr) * 1997-08-08 1999-09-17 Commissariat Energie Atomique Dispositif memoire non volatile programmable et effacable electriquement compatible avec un procede de fabrication cmos/soi
US6404006B2 (en) 1998-12-01 2002-06-11 Vantis Corporation EEPROM cell with tunneling across entire separated channels
US6214666B1 (en) 1998-12-18 2001-04-10 Vantis Corporation Method of forming a non-volatile memory device
US6282123B1 (en) 1998-12-21 2001-08-28 Lattice Semiconductor Corporation Method of fabricating, programming, and erasing a dual pocket two sided program/erase non-volatile memory cell
US6232631B1 (en) 1998-12-21 2001-05-15 Vantis Corporation Floating gate memory cell structure with programming mechanism outside the read path
US6294810B1 (en) 1998-12-22 2001-09-25 Vantis Corporation EEPROM cell with tunneling at separate edge and channel regions
US6294809B1 (en) 1998-12-28 2001-09-25 Vantis Corporation Avalanche programmed floating gate memory cell structure with program element in polysilicon
US6215700B1 (en) * 1999-01-07 2001-04-10 Vantis Corporation PMOS avalanche programmed floating gate memory cell structure
US5999449A (en) * 1999-01-27 1999-12-07 Vantis Corporation Two transistor EEPROM cell using P-well for tunneling across a channel
US6294811B1 (en) 1999-02-05 2001-09-25 Vantis Corporation Two transistor EEPROM cell
US6326663B1 (en) 1999-03-26 2001-12-04 Vantis Corporation Avalanche injection EEPROM memory cell with P-type control gate
US6172392B1 (en) * 1999-03-29 2001-01-09 Vantis Corporation Boron doped silicon capacitor plate
US6424000B1 (en) 1999-05-11 2002-07-23 Vantis Corporation Floating gate memory apparatus and method for selected programming thereof
EP1096575A1 (de) 1999-10-07 2001-05-02 STMicroelectronics S.r.l. Nichtflüchtige Speicherzelle mit einer Polysiliziumsschicht und Verfahren zur Herstellung
EP1091408A1 (de) 1999-10-07 2001-04-11 STMicroelectronics S.r.l. Festwertspeicherzelle mit einer Polysiliziumebene
US6222764B1 (en) * 1999-12-13 2001-04-24 Agere Systems Guardian Corp. Erasable memory device and an associated method for erasing a memory cell therein
DE10136582A1 (de) * 2001-07-27 2003-02-27 Micronas Gmbh Verfahren zur Herstellung eines nichtflüchtigen Halbleiterspeichers sowie nichtflüchtiger Halbleiterspeicher
US6664909B1 (en) 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
AU2003228833A1 (en) * 2002-05-09 2003-11-11 Impinj, Inc. Pseudo-nonvolatile direct-tunneling floating-gate device
US6950342B2 (en) 2002-07-05 2005-09-27 Impinj, Inc. Differential floating gate nonvolatile memories
US7221596B2 (en) 2002-07-05 2007-05-22 Impinj, Inc. pFET nonvolatile memory
JP2004200553A (ja) 2002-12-20 2004-07-15 Fujitsu Ltd 半導体装置及びその製造方法
US20050145924A1 (en) * 2004-01-07 2005-07-07 I-Sheng Liu Source/drain adjust implant
US7078761B2 (en) * 2004-03-05 2006-07-18 Chingis Technology Corporation Nonvolatile memory solution using single-poly pFlash technology
US7283390B2 (en) 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
JP2005353984A (ja) 2004-06-14 2005-12-22 Seiko Epson Corp 不揮発性記憶装置
JP2006202834A (ja) * 2005-01-18 2006-08-03 Seiko Epson Corp 半導体記憶装置および半導体記憶装置の製造方法
US7257033B2 (en) 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
JP2006344735A (ja) * 2005-06-08 2006-12-21 Seiko Epson Corp 半導体装置
US7348621B2 (en) * 2006-02-10 2008-03-25 Micrel, Inc. Non-volatile memory cells
JP4622902B2 (ja) 2006-03-17 2011-02-02 セイコーエプソン株式会社 不揮発性半導体記憶装置
KR100744139B1 (ko) 2006-06-28 2007-08-01 삼성전자주식회사 단일 게이트 구조를 가지는 ｅｅｐｒｏｍ 및 그 동작 방법
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
JP2009239161A (ja) * 2008-03-28 2009-10-15 Genusion Inc 不揮発性半導体記憶装置及びその使用方法
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US8355282B2 (en) * 2010-06-17 2013-01-15 Ememory Technology Inc. Logic-based multiple time programming memory cell
US9042174B2 (en) 2010-06-17 2015-05-26 Ememory Technology Inc. Non-volatile memory cell
US8958245B2 (en) 2010-06-17 2015-02-17 Ememory Technology Inc. Logic-based multiple time programming memory cell compatible with generic CMOS processes
JP5238859B2 (ja) * 2011-07-29 2013-07-17 株式会社Ｇｅｎｕｓｉｏｎ 不揮発性半導体記憶装置およびその読み書き制御方法
JP2013102119A (ja) * 2011-11-07 2013-05-23 Ememory Technology Inc 不揮発性メモリーセル
JP2013187534A (ja) * 2012-03-08 2013-09-19 Ememory Technology Inc 消去可能プログラマブル単一ポリ不揮発性メモリ
US9236453B2 (en) * 2013-09-27 2016-01-12 Ememory Technology Inc. Nonvolatile memory structure and fabrication method thereof
USD1039579S1 (en) 2020-11-11 2024-08-20 Omron Corporation Robot system

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US4404577A (en) * 1980-06-30 1983-09-13 International Business Machines Corp. Electrically alterable read only memory cell
DE3029539A1 (de) * 1980-08-04 1982-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle
JPS63166A (ja) * 1986-06-19 1988-01-05 Toshiba Corp 不揮発性半導体記憶装置
IT1198109B (it) * 1986-11-18 1988-12-21 Sgs Microelettronica Spa Cella di memoria eeprom a singolo livello di polisilicio con zona di ossido di tunnel
JP2686450B2 (ja) * 1988-03-30 1997-12-08 セイコーインスツルメンツ株式会社 半導体不揮発性メモリ
KR920001402B1 (ko) * 1988-11-29 1992-02-13 삼성전자 주식회사 불휘발성 반도체 기억소자
EP0471131B1 (de) * 1990-07-24 1999-02-03 STMicroelectronics S.r.l. Verfahren zur Herstellung einer N-Kanal-EPROM-Zelle mit einer einzigen Polysiliziumschicht

Also Published As

Publication number Publication date
DE776049T1 (de) 1998-03-05
KR970030850A (ko) 1997-06-26
DE69610062D1 (de) 2000-10-05
JPH1070203A (ja) 1998-03-10
JP2951605B2 (ja) 1999-09-20
EP0776049A1 (de) 1997-05-28
KR100306670B1 (ko) 2001-12-17
EP0776049B1 (de) 2000-08-30
DE69610062T2 (de) 2001-05-03

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