ATE211304T1 - Induktiv gekoppelte plasma-reaktoren - Google Patents

Induktiv gekoppelte plasma-reaktoren

Info

Publication number
ATE211304T1
ATE211304T1 AT95304041T AT95304041T ATE211304T1 AT E211304 T1 ATE211304 T1 AT E211304T1 AT 95304041 T AT95304041 T AT 95304041T AT 95304041 T AT95304041 T AT 95304041T AT E211304 T1 ATE211304 T1 AT E211304T1
Authority
AT
Austria
Prior art keywords
coil
coupling
power dissipation
employing
capacitive
Prior art date
Application number
AT95304041T
Other languages
English (en)
Inventor
Gerald Zheyao Yin
Hiroji Hanawa
Diana Xiaobing Ma
Donald Olgado
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE211304T1 publication Critical patent/ATE211304T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT95304041T 1994-07-18 1995-06-12 Induktiv gekoppelte plasma-reaktoren ATE211304T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/277,531 US5540824A (en) 1994-07-18 1994-07-18 Plasma reactor with multi-section RF coil and isolated conducting lid

Publications (1)

Publication Number Publication Date
ATE211304T1 true ATE211304T1 (de) 2002-01-15

Family

ID=23061269

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95304041T ATE211304T1 (de) 1994-07-18 1995-06-12 Induktiv gekoppelte plasma-reaktoren

Country Status (6)

Country Link
US (1) US5540824A (de)
EP (1) EP0694949B1 (de)
JP (1) JP3929514B2 (de)
KR (1) KR960005832A (de)
AT (1) ATE211304T1 (de)
DE (1) DE69524683T2 (de)

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US5800619A (en) * 1996-06-10 1998-09-01 Lam Research Corporation Vacuum plasma processor having coil with minimum magnetic field in its center
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US5846883A (en) * 1996-07-10 1998-12-08 Cvc, Inc. Method for multi-zone high-density inductively-coupled plasma generation
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
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US6178920B1 (en) 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
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US6875700B2 (en) * 2000-08-29 2005-04-05 Board Of Regents, The University Of Texas System Ion-Ion plasma processing with bias modulation synchronized to time-modulated discharges
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KR100561848B1 (ko) * 2003-11-04 2006-03-16 삼성전자주식회사 헬리컬 공진기형 플라즈마 처리 장치
US20050145341A1 (en) * 2003-11-19 2005-07-07 Masaki Suzuki Plasma processing apparatus
KR101038204B1 (ko) * 2004-02-25 2011-05-31 주성엔지니어링(주) 플라즈마 발생용 안테나
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US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
KR100785401B1 (ko) * 2005-11-04 2007-12-13 세메스 주식회사 유도 결합형 플라즈마 처리 장치
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
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US20080169183A1 (en) * 2007-01-16 2008-07-17 Varian Semiconductor Equipment Associates, Inc. Plasma Source with Liner for Reducing Metal Contamination
US7820533B2 (en) * 2007-02-16 2010-10-26 Varian Semiconductor Equipment Associates, Inc. Multi-step plasma doping with improved dose control
JP5410950B2 (ja) * 2009-01-15 2014-02-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
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WO2015067298A1 (en) * 2013-11-05 2015-05-14 Applied Materials, Inc. Radio frequency (rf) - sputter deposition source, deposition apparatus and method of assembling thereof
US10187966B2 (en) * 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement
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CN108770173B (zh) * 2018-07-27 2020-11-20 上海工程技术大学 一种等离子体射流产生装置
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Also Published As

Publication number Publication date
JPH08213196A (ja) 1996-08-20
JP3929514B2 (ja) 2007-06-13
DE69524683T2 (de) 2002-08-08
DE69524683D1 (de) 2002-01-31
EP0694949A2 (de) 1996-01-31
EP0694949B1 (de) 2001-12-19
KR960005832A (de) 1996-02-23
EP0694949A3 (de) 1998-12-16
US5540824A (en) 1996-07-30

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