ATE213514T1 - Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskern mit zwei oder mehreren übergangsmetallen - Google Patents

Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskern mit zwei oder mehreren übergangsmetallen

Info

Publication number
ATE213514T1
ATE213514T1 AT96850132T AT96850132T ATE213514T1 AT E213514 T1 ATE213514 T1 AT E213514T1 AT 96850132 T AT96850132 T AT 96850132T AT 96850132 T AT96850132 T AT 96850132T AT E213514 T1 ATE213514 T1 AT E213514T1
Authority
AT
Austria
Prior art keywords
transition metal
whiskers
transition
metals
carbide
Prior art date
Application number
AT96850132T
Other languages
English (en)
Inventor
Mats Johnsson
Niklas Ahlen
Mats Nygren
Magnus Ekelund
Gunnar Brandt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US08/504,779 external-priority patent/US5795384A/en
Priority claimed from SE9601335A external-priority patent/SE517106C2/sv
Application filed filed Critical
Application granted granted Critical
Publication of ATE213514T1 publication Critical patent/ATE213514T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/775—Nanosized powder or flake, e.g. nanosized catalyst
    • Y10S977/776—Ceramic powder or flake
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/90—Manufacture, treatment, or detection of nanostructure having step or means utilizing mechanical or thermal property, e.g. pressure, heat

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
AT96850132T 1995-07-20 1996-07-04 Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskern mit zwei oder mehreren übergangsmetallen ATE213514T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/504,779 US5795384A (en) 1995-07-20 1995-07-20 Manufacture of transition metal carbide nitride or carbonitride whiskers
SE9601335A SE517106C2 (sv) 1996-04-04 1996-04-04 Metod att tillverka karbid, nitrid eller karbonitridwhiskers

Publications (1)

Publication Number Publication Date
ATE213514T1 true ATE213514T1 (de) 2002-03-15

Family

ID=26662576

Family Applications (1)

Application Number Title Priority Date Filing Date
AT96850132T ATE213514T1 (de) 1995-07-20 1996-07-04 Herstellung von übergangsmetallkarbid-, übergangsmetallnitrid- und übergangsmetallkarbonitridwhiskern mit zwei oder mehreren übergangsmetallen

Country Status (6)

Country Link
US (1) US5851285A (de)
EP (1) EP0754784B1 (de)
JP (1) JPH09183699A (de)
AT (1) ATE213514T1 (de)
DE (1) DE69619313T2 (de)
IL (1) IL118795A0 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE510809C2 (sv) * 1997-07-08 1999-06-28 Sandvik Ab Whiskerförstärkt keramiskt skärverktygsmatierial
US6651521B2 (en) * 2001-05-01 2003-11-25 Hewlett-Packard Development Company, L.P. Method for sampling and testing data centers for metallic particulates
CN101411986B (zh) * 2007-10-19 2010-09-15 中国科学院大连化学物理研究所 一种炭载过渡金属碳氮化合物及其制备和应用
US10978718B2 (en) 2017-08-29 2021-04-13 Uchicago Argonne, Llc Carbon dioxide reduction electro catalysts prepared for metal organic frameworks
US11033888B2 (en) 2017-08-30 2021-06-15 Uchicago Argonne, Llc Nanofiber electrocatalyst

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3754076A (en) * 1970-10-30 1973-08-21 Univ Utah Production of silicon carbide from rice hulls
US4284844A (en) * 1979-05-07 1981-08-18 Belles Research Corp. Loudspeaker system
US4283375A (en) * 1980-01-28 1981-08-11 Great Lakes Carbon Corporation Production of SiC whiskers
US4284612A (en) * 1980-01-28 1981-08-18 Great Lakes Carbon Corporation Preparation of SiC whiskers
JPS6122000A (ja) * 1984-07-06 1986-01-30 Kanebo Ltd 炭化珪素ウイスカ−の製造法
US4756791A (en) * 1986-08-25 1988-07-12 Gte Laboratories Incorporated Chemical vapor deposition process for producing metal carbide or nitride whiskers
US4883559A (en) * 1988-04-12 1989-11-28 The United States Of America As Represented By The United States Department Of Energy Process for making transition metal nitride whiskers
US5094711A (en) * 1988-09-12 1992-03-10 Gte Valenite Corporation Process for producing single crystal titanium carbide whiskers
US4888084A (en) * 1988-10-24 1989-12-19 American Matrix, Inc. Method for the preparation of titanium nitride whiskers
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
US5118488A (en) * 1990-08-28 1992-06-02 Martin Marietta Energy Systems, Inc. Process for making whiskers, fibers and flakes of transition metal compounds
JP3202987B2 (ja) * 1990-11-26 2001-08-27 東海カーボン株式会社 炭化チタンウイスカーの製造方法
CA2055693A1 (en) * 1990-12-20 1992-06-21 Hermann L. Rittler Phosphorous polymers
US5221526A (en) * 1991-05-24 1993-06-22 Advanced Industrial Materials Production of silicon carbide whiskers using a seeding component to determine shape and size of whiskers
US5160574A (en) * 1991-05-30 1992-11-03 Aluminum Company Of America Process for production of small diameter titanium carbide whiskers
US5383421A (en) * 1993-05-19 1995-01-24 The Dow Chemical Company Method for forming beta-silicon carbide whiskers, singly or in a matrix, using an organotitanium coordination compound catalyst

Also Published As

Publication number Publication date
EP0754784A1 (de) 1997-01-22
IL118795A0 (en) 1996-10-31
EP0754784B1 (de) 2002-02-20
DE69619313D1 (de) 2002-03-28
JPH09183699A (ja) 1997-07-15
US5851285A (en) 1998-12-22
DE69619313T2 (de) 2002-08-14

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee