ATE215998T1 - Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand - Google Patents

Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand

Info

Publication number
ATE215998T1
ATE215998T1 AT96108108T AT96108108T ATE215998T1 AT E215998 T1 ATE215998 T1 AT E215998T1 AT 96108108 T AT96108108 T AT 96108108T AT 96108108 T AT96108108 T AT 96108108T AT E215998 T1 ATE215998 T1 AT E215998T1
Authority
AT
Austria
Prior art keywords
temperature
reaction chamber
chamber
air
target temperature
Prior art date
Application number
AT96108108T
Other languages
English (en)
Inventor
David K Carlson
Norma Riley
Roger N Anderson
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ATE215998T1 publication Critical patent/ATE215998T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Physical Vapour Deposition (AREA)
AT96108108T 1996-05-21 1996-05-21 Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand ATE215998T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96108108A EP0808917B1 (de) 1996-05-21 1996-05-21 Verfahren und Vorrichtung zum Regeln der Temperatur einer Reaktorwand

Publications (1)

Publication Number Publication Date
ATE215998T1 true ATE215998T1 (de) 2002-04-15

Family

ID=8222806

Family Applications (2)

Application Number Title Priority Date Filing Date
AT01109786T ATE312955T1 (de) 1996-05-21 1996-05-21 Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand
AT96108108T ATE215998T1 (de) 1996-05-21 1996-05-21 Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT01109786T ATE312955T1 (de) 1996-05-21 1996-05-21 Verfahren und vorrichtung zum regeln der temperatur einer reaktorwand

Country Status (3)

Country Link
EP (4) EP1136590A3 (de)
AT (2) ATE312955T1 (de)
DE (1) DE69620590T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6023555A (en) * 1998-08-17 2000-02-08 Eaton Corporation Radiant heating apparatus and method
US6259072B1 (en) * 1999-11-09 2001-07-10 Axcelis Technologies, Inc. Zone controlled radiant heating system utilizing focused reflector
US6738683B1 (en) * 2000-09-05 2004-05-18 Cxe Equipment Services, Llc Apparatus and method for cleaning a bell jar in a barrel epitaxial reactor
US20090000641A1 (en) * 2007-06-28 2009-01-01 Applied Materials, Inc. Methods and apparatus for cleaning deposition chamber parts using selective spray etch
DE102011083245B4 (de) 2011-09-22 2019-04-25 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer epitaktischen Schicht aus Silizium auf einer Halbleiterscheibe aus einkristallinem Silizium durch Gasphasenabscheidung in einer Prozesskammer
US9978565B2 (en) 2011-10-07 2018-05-22 Lam Research Corporation Systems for cooling RF heated chamber components
US9530656B2 (en) 2011-10-07 2016-12-27 Lam Research Corporation Temperature control in RF chamber with heater and air amplifier
JP5940375B2 (ja) * 2012-06-01 2016-06-29 シャープ株式会社 気相成長装置および窒化物半導体発光素子の製造方法
TWI623960B (zh) * 2013-03-27 2018-05-11 Lam Research Corporation 半導體製造設備及其處理方法
US10249493B2 (en) 2015-12-30 2019-04-02 Siltronic Ag Method for depositing a layer on a semiconductor wafer by vapor deposition in a process chamber
DE102018121854A1 (de) * 2018-09-07 2020-03-12 Aixtron Se Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
CN110888470A (zh) * 2018-09-07 2020-03-17 长鑫存储技术有限公司 温度控制装置、温度控制方法和半导体生产设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0164928A3 (de) * 1984-06-04 1987-07-29 Texas Instruments Incorporated Senkrechter Heisswandreaktor zur chemischen Abscheidung aus der Gasphase
IT1215444B (it) * 1987-04-24 1990-02-14 L P E S P A Perfezionamenti ad induttori e suscettori impiegabili in reattori epitassiali.
KR960012876B1 (ko) * 1988-06-16 1996-09-25 도오교오 에레구토론 사가미 가부시끼가이샤 열처리 장치
US5155336A (en) * 1990-01-19 1992-10-13 Applied Materials, Inc. Rapid thermal heating apparatus and method
JP2892170B2 (ja) * 1990-07-20 1999-05-17 株式会社東芝 熱処理成膜方法
JP2755876B2 (ja) * 1992-07-30 1998-05-25 株式会社東芝 熱処理成膜装置
JPH07211663A (ja) * 1994-01-27 1995-08-11 Hitachi Ltd 半導体製造装置
JP3094816B2 (ja) * 1994-10-25 2000-10-03 信越半導体株式会社 薄膜の成長方法

Also Published As

Publication number Publication date
EP1143035A2 (de) 2001-10-10
DE69620590T2 (de) 2002-11-21
EP1136590A3 (de) 2002-01-02
EP1143036A2 (de) 2001-10-10
EP1143035A3 (de) 2001-11-28
EP0808917B1 (de) 2002-04-10
DE69620590D1 (de) 2002-05-16
EP1143036A3 (de) 2001-11-28
EP1143035B1 (de) 2005-12-14
EP1136590A2 (de) 2001-09-26
ATE312955T1 (de) 2005-12-15
EP0808917A1 (de) 1997-11-26

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