ATE218631T1 - Vorrichtung und verfahren zur kristallzüchtung - Google Patents
Vorrichtung und verfahren zur kristallzüchtungInfo
- Publication number
- ATE218631T1 ATE218631T1 AT98936502T AT98936502T ATE218631T1 AT E218631 T1 ATE218631 T1 AT E218631T1 AT 98936502 T AT98936502 T AT 98936502T AT 98936502 T AT98936502 T AT 98936502T AT E218631 T1 ATE218631 T1 AT E218631T1
- Authority
- AT
- Austria
- Prior art keywords
- zone
- monitoring
- sink
- sink zone
- bulk
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 9
- 239000013078 crystal Substances 0.000 title abstract 4
- 238000012544 monitoring process Methods 0.000 abstract 3
- 239000012808 vapor phase Substances 0.000 abstract 2
- 238000011065 in-situ storage Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9717726.5A GB9717726D0 (en) | 1997-08-22 | 1997-08-22 | Improvements in and relating to crystal growth |
| PCT/GB1998/002224 WO1999010571A1 (en) | 1997-08-22 | 1998-07-27 | Apparatus and process for crystal growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE218631T1 true ATE218631T1 (de) | 2002-06-15 |
Family
ID=10817830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98936502T ATE218631T1 (de) | 1997-08-22 | 1998-07-27 | Vorrichtung und verfahren zur kristallzüchtung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6375739B1 (de) |
| EP (1) | EP1019568B1 (de) |
| JP (1) | JP4688090B2 (de) |
| AT (1) | ATE218631T1 (de) |
| AU (1) | AU8547798A (de) |
| DE (1) | DE69805824T2 (de) |
| GB (1) | GB9717726D0 (de) |
| WO (1) | WO1999010571A1 (de) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6871700B2 (en) * | 2000-11-17 | 2005-03-29 | G & H Technologies Llc | Thermal flux regulator |
| US6871604B2 (en) * | 2002-09-27 | 2005-03-29 | Pyrogenesis, Inc. | Conversion of waste into highly efficient fuel |
| GB2423307A (en) * | 2005-02-22 | 2006-08-23 | Univ Durham | Apparatus and process for crystal growth |
| JP5662001B2 (ja) * | 2005-12-21 | 2015-01-28 | クロメック リミテッド | 半導体デバイス及びその製造方法 |
| GB2433648A (en) | 2005-12-21 | 2007-06-27 | Durham Scient Crystals Ltd | Radiation detector formed by deposition of bulk semiconductor crystal layers |
| GB2452011B (en) * | 2007-05-18 | 2012-02-08 | Kromek Ltd | Apparatus for crystal growth |
| GB0908583D0 (en) | 2009-05-19 | 2009-06-24 | Durham Scient Crystals Ltd | Semiconductor device contacts |
| EP2433155B1 (de) | 2009-05-19 | 2016-10-19 | Kromek Limited | Strahlungsdetektion |
| GB201019521D0 (en) | 2010-11-18 | 2010-12-29 | Durham Scient Crystals Ltd | Radiation detection |
| GB2489474A (en) | 2011-03-29 | 2012-10-03 | Kromek Ltd | Crystal growth apparatus |
| GB201105958D0 (en) | 2011-04-08 | 2011-05-18 | Kromek Ltd | Apparatus and method for crystal growth |
| RU2468128C1 (ru) * | 2011-06-15 | 2012-11-27 | Общество с ограниченной ответственностью "Комплектующие и Материалы" (ООО "КИМ") | СПОСОБ ВЫРАЩИВАНИЯ МОНОКРИСТАЛЛА AlN И УСТРОЙСТВО ДЛЯ ЕГО РЕАЛИЗАЦИИ |
| GB201210519D0 (en) * | 2012-06-14 | 2012-07-25 | Kromek Ltd | Apparatus and method for crystal growth |
| CN113344439B (zh) * | 2021-06-29 | 2024-04-26 | 蓝思系统集成有限公司 | 一种晶体生长控制方法、装置、系统及可读存储介质 |
| CN113960288B (zh) * | 2021-10-28 | 2023-09-19 | 中国石油大学(华东) | 一种源-汇系统定量评价方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3619283A (en) * | 1968-09-27 | 1971-11-09 | Ibm | Method for epitaxially growing thin films |
| US4620963A (en) | 1985-02-19 | 1986-11-04 | Minnesota Mining And Manufacturing Company | Vapor transport reactor with composite metal-glass tube |
| JPS63206399A (ja) * | 1987-02-20 | 1988-08-25 | Ibiden Co Ltd | SiCウィスカーの製造方法およびその装置 |
| US5365876A (en) | 1993-02-01 | 1994-11-22 | The United States Of America As Represented By The United States Department Of Energy | Crystal face temperature determination means |
| DE4310744A1 (de) | 1993-04-01 | 1994-10-06 | Siemens Ag | Vorrichtung zum Herstellen von SiC-Einkristallen |
| JP2725647B2 (ja) | 1994-12-19 | 1998-03-11 | 住友電気工業株式会社 | Ii−vi族化合物半導体単結晶の成長方法 |
-
1997
- 1997-08-22 GB GBGB9717726.5A patent/GB9717726D0/en active Pending
-
1998
- 1998-07-27 US US09/485,890 patent/US6375739B1/en not_active Expired - Lifetime
- 1998-07-27 WO PCT/GB1998/002224 patent/WO1999010571A1/en not_active Ceased
- 1998-07-27 EP EP98936502A patent/EP1019568B1/de not_active Expired - Lifetime
- 1998-07-27 JP JP2000507872A patent/JP4688090B2/ja not_active Expired - Lifetime
- 1998-07-27 AT AT98936502T patent/ATE218631T1/de not_active IP Right Cessation
- 1998-07-27 AU AU85477/98A patent/AU8547798A/en not_active Abandoned
- 1998-07-27 DE DE69805824T patent/DE69805824T2/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1019568A1 (de) | 2000-07-19 |
| DE69805824T2 (de) | 2003-02-06 |
| EP1019568B1 (de) | 2002-06-05 |
| WO1999010571A1 (en) | 1999-03-04 |
| GB9717726D0 (en) | 1997-10-29 |
| DE69805824D1 (de) | 2002-07-11 |
| US6375739B1 (en) | 2002-04-23 |
| AU8547798A (en) | 1999-03-16 |
| JP2001514149A (ja) | 2001-09-11 |
| JP4688090B2 (ja) | 2011-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |