ATE225567T1 - Verwendung einer lösung für die herstellung einer elektroemittierenden vorrichtung und methode zur herstellung von elektroemittierenden vorrichtungen - Google Patents

Verwendung einer lösung für die herstellung einer elektroemittierenden vorrichtung und methode zur herstellung von elektroemittierenden vorrichtungen

Info

Publication number
ATE225567T1
ATE225567T1 AT95305254T AT95305254T ATE225567T1 AT E225567 T1 ATE225567 T1 AT E225567T1 AT 95305254 T AT95305254 T AT 95305254T AT 95305254 T AT95305254 T AT 95305254T AT E225567 T1 ATE225567 T1 AT E225567T1
Authority
AT
Austria
Prior art keywords
electron
emitting devices
producing
solution
forming
Prior art date
Application number
AT95305254T
Other languages
English (en)
Inventor
Yoshinori Tomida
Hiroyuki Hashimoto
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP20937994A external-priority patent/JP3214986B2/ja
Priority claimed from JP20937594A external-priority patent/JP3214985B2/ja
Priority claimed from JP10161595A external-priority patent/JP3120952B2/ja
Priority claimed from JP10161495A external-priority patent/JP3103005B2/ja
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE225567T1 publication Critical patent/ATE225567T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/027—Manufacture of electrodes or electrode systems of cold cathodes of thin film cathodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1295—Process of deposition of the inorganic material with after-treatment of the deposited inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/316—Cold cathodes having an electric field parallel to the surface thereof, e.g. thin film cathodes
    • H01J2201/3165—Surface conduction emission type cathodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electroluminescent Light Sources (AREA)
  • Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
AT95305254T 1994-08-11 1995-07-27 Verwendung einer lösung für die herstellung einer elektroemittierenden vorrichtung und methode zur herstellung von elektroemittierenden vorrichtungen ATE225567T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP20937994A JP3214986B2 (ja) 1994-08-11 1994-08-11 電子放出部形成用材料、電子放出素子および画像形成装置の製造方法
JP20937594A JP3214985B2 (ja) 1994-08-11 1994-08-11 電子放出部形成用材料、電子放出素子および画像形成装置の製造方法
JP10161595A JP3120952B2 (ja) 1995-04-04 1995-04-04 導電性膜形成用材料、並びにそれを用いた電子放出素子、電子源、表示パネルおよび画像形成装置の製造方法
JP10161495A JP3103005B2 (ja) 1995-04-04 1995-04-04 導電性膜形成用材料、並びにそれを用いた電子放出素子、電子源、表示パネルおよび画像形成装置の製造方法

Publications (1)

Publication Number Publication Date
ATE225567T1 true ATE225567T1 (de) 2002-10-15

Family

ID=27468941

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95305254T ATE225567T1 (de) 1994-08-11 1995-07-27 Verwendung einer lösung für die herstellung einer elektroemittierenden vorrichtung und methode zur herstellung von elektroemittierenden vorrichtungen

Country Status (8)

Country Link
US (2) US5716618A (de)
EP (1) EP0696813B1 (de)
KR (1) KR100198766B1 (de)
CN (1) CN1083145C (de)
AT (1) ATE225567T1 (de)
AU (1) AU710259B2 (de)
CA (1) CA2155714C (de)
DE (1) DE69528423T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3302278B2 (ja) 1995-12-12 2002-07-15 キヤノン株式会社 電子放出素子の製造方法並びに該製造方法を用いた電子源及び画像形成装置の製造方法
DE69719839T2 (de) 1996-04-26 2003-11-13 Canon K.K., Tokio/Tokyo Verfahren zur Herstellung einer Elektronen emittierenden Vorrichtung, Elektronenquelle und diese Quelle verwendendes Bilderzeugungsgerät
JP3323847B2 (ja) 1999-02-22 2002-09-09 キヤノン株式会社 電子放出素子、電子源および画像形成装置の製造方法
JP3323849B2 (ja) * 1999-02-26 2002-09-09 キヤノン株式会社 電子放出素子およびこれを用いた電子源およびこれを用いた画像形成装置
EP1081739B1 (de) 1999-03-05 2010-06-02 Canon Kabushiki Kaisha Bilderzeugungsvorrichtung
US6653735B1 (en) * 2002-07-30 2003-11-25 Advanced Micro Devices, Inc. CVD silicon carbide layer as a BARC and hard mask for gate patterning
JP2009187825A (ja) * 2008-02-07 2009-08-20 Canon Inc 画像表示装置の製造方法
EP2534475A4 (de) 2010-02-08 2017-04-19 Canon Kabushiki Kaisha Verfahren und vorrichtung zur rauschunterdrückung in massesignalen
US9201305B2 (en) * 2013-06-28 2015-12-01 Az Electronic Materials (Luxembourg) S.A.R.L. Spin-on compositions of soluble metal oxide carboxylates and methods of their use

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3004080C2 (de) * 1980-02-05 1986-03-20 Sigri GmbH, 8901 Meitingen Verfahren zum Beschichten einer porösen Elektrode
EP0299461B1 (de) * 1987-07-15 1995-05-10 Canon Kabushiki Kaisha Elektronenemittierende Vorrichtung
JP2538043B2 (ja) * 1989-04-05 1996-09-25 松下電器産業株式会社 パタ―ン形成用材料とそれを用いたパタ―ン形成基板の作製方法
DE4035080A1 (de) * 1990-11-05 1992-05-07 Abb Patent Gmbh Verfahren und einrichtung zur herstellung von partiellen metallischen schichten
US5210245A (en) * 1990-12-10 1993-05-11 Mooney Chemicals, Inc. Gold carboxylates and process for preparing the same
US5149854A (en) * 1990-12-10 1992-09-22 Mooney Chemicals, Inc. Preparation of platinum group metal and rhenium carboxylates
US5514822A (en) * 1991-12-13 1996-05-07 Symetrix Corporation Precursors and processes for making metal oxides
US5612082A (en) * 1991-12-13 1997-03-18 Symetrix Corporation Process for making metal oxides
JP2961477B2 (ja) 1992-12-29 1999-10-12 キヤノン株式会社 電子放出素子、電子線発生装置及び画像形成装置の製造方法
CA2112431C (en) * 1992-12-29 2000-05-09 Canon Kabushiki Kaisha Electron source, and image-forming apparatus and method of driving the same
DE69425230T2 (de) * 1993-12-17 2001-02-22 Canon K.K., Tokio/Tokyo Herstellungsverfahren einer Elektronen emittierenden Vorrichtung, einer Elektronenquelle und eine Bilderzeugungsvorrichtung

Also Published As

Publication number Publication date
CN1083145C (zh) 2002-04-17
AU2723395A (en) 1996-02-22
US5716618A (en) 1998-02-10
KR100198766B1 (ko) 1999-07-01
EP0696813A1 (de) 1996-02-14
USRE37896E1 (en) 2002-10-29
AU710259B2 (en) 1999-09-16
CA2155714A1 (en) 1996-02-12
CN1122950A (zh) 1996-05-22
DE69528423D1 (de) 2002-11-07
EP0696813B1 (de) 2002-10-02
DE69528423T2 (de) 2003-06-26
CA2155714C (en) 2000-08-01

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