ATE231287T1 - Verfahren für anodische bindung mit lichtstrahlung - Google Patents

Verfahren für anodische bindung mit lichtstrahlung

Info

Publication number
ATE231287T1
ATE231287T1 AT92116628T AT92116628T ATE231287T1 AT E231287 T1 ATE231287 T1 AT E231287T1 AT 92116628 T AT92116628 T AT 92116628T AT 92116628 T AT92116628 T AT 92116628T AT E231287 T1 ATE231287 T1 AT E231287T1
Authority
AT
Austria
Prior art keywords
anodic bonding
light radiation
substrate
glass substrate
light
Prior art date
Application number
AT92116628T
Other languages
English (en)
Inventor
Masatake Akaike
Takayuki Yagi
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE231287T1 publication Critical patent/ATE231287T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • C04B37/045—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass characterised by the interlayer used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/665—Local sintering, e.g. laser sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/66—Specific sintering techniques, e.g. centrifugal sintering
    • C04B2235/666—Applying a current during sintering, e.g. plasma sintering [SPS], electrical resistance heating or pulse electric current sintering [PECS]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/16—Silicon interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07335—Applying EM radiation, e.g. induction heating or using a laser

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Ceramic Products (AREA)
  • Micromachines (AREA)
AT92116628T 1991-09-30 1992-09-29 Verfahren für anodische bindung mit lichtstrahlung ATE231287T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27611491 1991-09-30

Publications (1)

Publication Number Publication Date
ATE231287T1 true ATE231287T1 (de) 2003-02-15

Family

ID=17564992

Family Applications (1)

Application Number Title Priority Date Filing Date
AT92116628T ATE231287T1 (de) 1991-09-30 1992-09-29 Verfahren für anodische bindung mit lichtstrahlung

Country Status (4)

Country Link
US (1) US5820648A (de)
EP (1) EP0539741B1 (de)
AT (1) ATE231287T1 (de)
DE (1) DE69232896T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3300060B2 (ja) * 1992-10-22 2002-07-08 キヤノン株式会社 加速度センサー及びその製造方法
JP3188546B2 (ja) * 1993-03-23 2001-07-16 キヤノン株式会社 絶縁体と導電体との接合体並びに接合方法
JP3383081B2 (ja) * 1994-07-12 2003-03-04 三菱電機株式会社 陽極接合法を用いて製造した電子部品及び電子部品の製造方法
US6823693B1 (en) * 1998-03-06 2004-11-30 Micron Technology, Inc. Anodic bonding
JP3961182B2 (ja) * 1999-01-29 2007-08-22 セイコーインスツル株式会社 陽極接合方法
JP3515003B2 (ja) * 1999-02-03 2004-04-05 新明和工業株式会社 レーザ融着方法
FR2809534B1 (fr) * 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US20100236705A1 (en) * 2000-07-18 2010-09-23 Chou Stephen Y Fluidic and Microdevice Apparatus and Methods For Bonding Components Thereof
US6809424B2 (en) * 2000-12-19 2004-10-26 Harris Corporation Method for making electronic devices including silicon and LTCC and devices produced thereby
US6503847B2 (en) 2001-04-26 2003-01-07 Institute Of Microelectronics Room temperature wafer-to-wafer bonding by polydimethylsiloxane
US6660614B2 (en) 2001-05-04 2003-12-09 New Mexico Tech Research Foundation Method for anodically bonding glass and semiconducting material together
JP2003101188A (ja) * 2001-09-26 2003-04-04 Nitto Denko Corp ビアホールの形成方法及びそれを用いたフレキシブル配線板とその製造方法
DE10206832B4 (de) * 2002-02-18 2004-01-08 Eads Deutschland Gmbh Verfahren zur Herstellung mikromechanischer Bauelemente mittels anodischem Bonden und mikromechanisches Bauelement
US6762072B2 (en) * 2002-03-06 2004-07-13 Robert Bosch Gmbh SI wafer-cap wafer bonding method using local laser energy, device produced by the method, and system used in the method
WO2003097552A1 (en) 2002-04-30 2003-11-27 Agency For Science Technology And Research A method of wafer/substrate bonding
US20040020173A1 (en) * 2002-07-30 2004-02-05 Cho Steven T. Low temperature anodic bonding method using focused energy for assembly of micromachined systems
DE10235372A1 (de) * 2002-08-02 2004-02-19 Robert Bosch Gmbh Elektrisches Bauelement
US7259466B2 (en) * 2002-12-17 2007-08-21 Finisar Corporation Low temperature bonding of multilayer substrates
US7361593B2 (en) * 2002-12-17 2008-04-22 Finisar Corporation Methods of forming vias in multilayer substrates
US7399681B2 (en) 2003-02-18 2008-07-15 Corning Incorporated Glass-based SOI structures
US7176528B2 (en) 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
JP2004301554A (ja) * 2003-03-28 2004-10-28 Canon Inc 電位測定装置及び画像形成装置
US20050173380A1 (en) * 2004-02-09 2005-08-11 Carbone Frank L. Directed energy net shape method and apparatus
EP1569263B1 (de) 2004-02-27 2011-11-23 OSRAM Opto Semiconductors GmbH Verfahren zum Verbinden zweier Wafer
US7153759B2 (en) * 2004-04-20 2006-12-26 Agency For Science Technology And Research Method of fabricating microelectromechanical system structures
JP4375186B2 (ja) * 2004-09-30 2009-12-02 株式会社日立製作所 陽極接合構造を用いた電子装置
DE102007008540A1 (de) * 2007-02-21 2008-08-28 Friedrich-Schiller-Universität Jena Verfahren zum Laser-gestützten Bonden, derart gebondete Substrate und deren Verwendung
DE102007039291A1 (de) * 2007-08-20 2009-02-26 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
NL2002648C2 (en) 2009-03-20 2010-09-22 Flamco Bv Improved combined gas removal and dirt removal device.
CN103130180B (zh) * 2011-12-02 2015-10-28 中国科学院微电子研究所 一种晶圆级阳极键合方法
TWI748524B (zh) * 2019-09-17 2021-12-01 日商國際電氣股份有限公司 基板冷卻單元，基板處理裝置，半導體裝置的製造方法及程式

Family Cites Families (15)

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Publication number Priority date Publication date Assignee Title
GB1138401A (en) * 1965-05-06 1969-01-01 Mallory & Co Inc P R Bonding
US3417459A (en) * 1965-05-06 1968-12-24 Mallory & Co Inc P R Bonding electrically conductive metals to insulators
US3506424A (en) * 1967-05-03 1970-04-14 Mallory & Co Inc P R Bonding an insulator to an insulator
US3589965A (en) * 1968-11-27 1971-06-29 Mallory & Co Inc P R Bonding an insulator to an insulator
US3783218A (en) * 1972-01-12 1974-01-01 Gen Electric Electrostatic bonding process
US3951707A (en) * 1973-04-02 1976-04-20 Kulite Semiconductor Products, Inc. Method for fabricating glass-backed transducers and glass-backed structures
US4260095A (en) * 1978-08-18 1981-04-07 Smith Phillip H Method of manufacturing a clad product
US4294602A (en) * 1979-08-09 1981-10-13 The Boeing Company Electro-optically assisted bonding
US4457972A (en) * 1981-12-07 1984-07-03 California Institute Of Technology Enhanced adhesion by high energy bombardment
US4452624A (en) * 1982-12-21 1984-06-05 The United States Of America As Represented By The Secretary Of The Navy Method for bonding insulator to insulator
DE3436001A1 (de) * 1984-10-01 1986-04-03 Siemens AG, 1000 Berlin und 8000 München Elektrostatisches glasloeten von halbleiterbauteilen
US4643532A (en) * 1985-06-24 1987-02-17 At&T Bell Laboratories Field-assisted bonding method and articles produced thereby
FR2624041A1 (fr) * 1987-12-02 1989-06-09 Otic Fischer & Porter Procede de soudage au moyen d'un faisceau laser, notamment applicable au soudage de pieces en verre
US5160560A (en) * 1988-06-02 1992-11-03 Hughes Aircraft Company Method of producing optically flat surfaces on processed silicon wafers
GB9020908D0 (en) * 1990-09-26 1990-11-07 Nat Res Dev Field-assisted bonding

Also Published As

Publication number Publication date
DE69232896T2 (de) 2003-09-04
EP0539741B1 (de) 2003-01-15
US5820648A (en) 1998-10-13
EP0539741A1 (de) 1993-05-05
DE69232896D1 (de) 2003-02-20

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