ATE234312T1 - Eine ein zweiwertiges metall und ein metall der gruppe 13 enthaltende flüchtige organometallverbindung, verfahren zu deren herstellung und deren verwendung zur herstellung einer heterometalloxidschicht - Google Patents

Eine ein zweiwertiges metall und ein metall der gruppe 13 enthaltende flüchtige organometallverbindung, verfahren zu deren herstellung und deren verwendung zur herstellung einer heterometalloxidschicht

Info

Publication number
ATE234312T1
ATE234312T1 AT98115089T AT98115089T ATE234312T1 AT E234312 T1 ATE234312 T1 AT E234312T1 AT 98115089 T AT98115089 T AT 98115089T AT 98115089 T AT98115089 T AT 98115089T AT E234312 T1 ATE234312 T1 AT E234312T1
Authority
AT
Austria
Prior art keywords
metal
group
heterometall
divalue
organometall
Prior art date
Application number
AT98115089T
Other languages
English (en)
Inventor
Yun-Soo Kim
Won-Yong Koh
Su-Jin Ku
Chang-Gyoun Kim
Kyu-Sang Yu
Original Assignee
Korea Res Inst Chem Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Res Inst Chem Tech filed Critical Korea Res Inst Chem Tech
Application granted granted Critical
Publication of ATE234312T1 publication Critical patent/ATE234312T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
    • C07F3/02—Magnesium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
AT98115089T 1997-08-12 1998-08-11 Eine ein zweiwertiges metall und ein metall der gruppe 13 enthaltende flüchtige organometallverbindung, verfahren zu deren herstellung und deren verwendung zur herstellung einer heterometalloxidschicht ATE234312T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970038384A KR100254530B1 (ko) 1997-08-12 1997-08-12 2가 금속과 13족 금속의 알킬산알킬헤테로금속 화합물,이의 제조방법 및 이를 이용한 mm'2o4 형 복합 산화물 막의 제조방법

Publications (1)

Publication Number Publication Date
ATE234312T1 true ATE234312T1 (de) 2003-03-15

Family

ID=19517289

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98115089T ATE234312T1 (de) 1997-08-12 1998-08-11 Eine ein zweiwertiges metall und ein metall der gruppe 13 enthaltende flüchtige organometallverbindung, verfahren zu deren herstellung und deren verwendung zur herstellung einer heterometalloxidschicht

Country Status (6)

Country Link
US (2) US5998644A (de)
EP (1) EP0897925B1 (de)
JP (1) JP3190893B2 (de)
KR (1) KR100254530B1 (de)
AT (1) ATE234312T1 (de)
DE (1) DE69812012T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100186949B1 (ko) * 1996-02-12 1999-05-15 재단법인 한국화학연구소 알킬알루미늄알킬산마그네슘과 그 제조 방법 및이를이용한알루민산마그네슘의합성
KR100254530B1 (ko) * 1997-08-12 2000-05-01 김충섭 2가 금속과 13족 금속의 알킬산알킬헤테로금속 화합물,이의 제조방법 및 이를 이용한 mm'2o4 형 복합 산화물 막의 제조방법
EP2540732A1 (de) * 2011-06-30 2013-01-02 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Abscheidung von galliumhaltigen Dünnfilmen mittels neuen Galliumvorläufern
US20160294010A1 (en) * 2015-03-31 2016-10-06 The Trustees Of Princeton University Electrolytes for magnesium-ion batteries
JP2018056390A (ja) * 2016-09-29 2018-04-05 Tdk株式会社 磁気抵抗効果素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761500A (en) * 1970-05-26 1973-09-25 Owens Illinois Inc Liquid double alkoxides
US5008420A (en) * 1990-09-18 1991-04-16 Akzo N.V. Novel spinel precursors
KR0164984B1 (ko) * 1995-12-04 1999-01-15 강박광 화학증착에 의해 알킬산디알킬알루미늄으로부터 산화알루미늄막을 형성하는 방법
KR100186949B1 (ko) * 1996-02-12 1999-05-15 재단법인 한국화학연구소 알킬알루미늄알킬산마그네슘과 그 제조 방법 및이를이용한알루민산마그네슘의합성
KR100254530B1 (ko) * 1997-08-12 2000-05-01 김충섭 2가 금속과 13족 금속의 알킬산알킬헤테로금속 화합물,이의 제조방법 및 이를 이용한 mm'2o4 형 복합 산화물 막의 제조방법

Also Published As

Publication number Publication date
DE69812012T2 (de) 2003-10-02
EP0897925A3 (de) 2000-08-02
KR19990015970A (ko) 1999-03-05
JPH11147888A (ja) 1999-06-02
US6156916A (en) 2000-12-05
EP0897925A2 (de) 1999-02-24
KR100254530B1 (ko) 2000-05-01
DE69812012D1 (de) 2003-04-17
EP0897925B1 (de) 2003-03-12
US5998644A (en) 1999-12-07
JP3190893B2 (ja) 2001-07-23

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