ATE235743T1 - Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte - Google Patents

Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte

Info

Publication number
ATE235743T1
ATE235743T1 AT97951334T AT97951334T ATE235743T1 AT E235743 T1 ATE235743 T1 AT E235743T1 AT 97951334 T AT97951334 T AT 97951334T AT 97951334 T AT97951334 T AT 97951334T AT E235743 T1 ATE235743 T1 AT E235743T1
Authority
AT
Austria
Prior art keywords
wires
stability
atomic
producing
great length
Prior art date
Application number
AT97951334T
Other languages
English (en)
Inventor
Gerald Dujardin
Andrew Mayne
Fabrice Semond
Patrick Soukiassian
Original Assignee
Commissariat Energie Atomique
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Centre Nat Rech Scient filed Critical Commissariat Energie Atomique
Application granted granted Critical
Publication of ATE235743T1 publication Critical patent/ATE235743T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/712—Integrated with dissimilar structures on a common substrate formed from plural layers of nanosized material, e.g. stacked structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
  • Recrystallisation Techniques (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Wire Bonding (AREA)
  • Yarns And Mechanical Finishing Of Yarns Or Ropes (AREA)
AT97951334T 1996-12-16 1997-12-15 Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte ATE235743T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9615435A FR2757183B1 (fr) 1996-12-16 1996-12-16 Fils atomiques de grande longueur et de grande stabilite, procede de fabrication de ces fils, application en nano-electronique
PCT/FR1997/002298 WO1998027578A1 (fr) 1996-12-16 1997-12-15 Fils atomiques de grande longueur et de gande stabilite, procede de fabrication de ces fils, application en nano-electronique

Publications (1)

Publication Number Publication Date
ATE235743T1 true ATE235743T1 (de) 2003-04-15

Family

ID=9498707

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97951334T ATE235743T1 (de) 1996-12-16 1997-12-15 Atomare drähte von grosser länge und stabilität und verfahren zum herstellen dieser drähte

Country Status (8)

Country Link
US (1) US6274234B1 (de)
EP (1) EP0944916B1 (de)
JP (1) JP4327254B2 (de)
AT (1) ATE235743T1 (de)
DE (1) DE69720249T2 (de)
DK (1) DK0944916T3 (de)
FR (1) FR2757183B1 (de)
WO (1) WO1998027578A1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2786794B1 (fr) * 1998-12-02 2001-03-02 Commissariat Energie Atomique Couche monoatomique et monocristalline de grande taille, en carbone de type diamant, et procede de fabrication de cette couche
FR2801723B1 (fr) 1999-11-25 2003-09-05 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
AU2001269687A1 (en) 2000-05-09 2001-11-20 Usf Filtration And Separations Group Inc. Apparatus and method for drawing continuous fiber
FR2823770B1 (fr) * 2001-04-19 2004-05-21 Commissariat Energie Atomique Procede de traitement de la surface d'un materiau semiconducteur, utilisant notamment l'hydrogene, et surface obtenue par ce procede
FR2823739B1 (fr) * 2001-04-19 2003-05-16 Commissariat Energie Atomique Procede de fabrication de nanostructures unidimensionnelles et nanostructures obtenues par ce procede
US6762131B2 (en) * 2002-04-13 2004-07-13 The Board Of Trustees Of The University Of Illinois Method for large-scale fabrication of atomic-scale structures on material surfaces using surface vacancies
FR2841892B1 (fr) * 2002-07-05 2005-05-06 Commissariat Energie Atomique Nano-objets metalliques, formes sur des surfaces de carbure de silicium, et procede de fabrication de ces nano-objets
US6869480B1 (en) * 2002-07-17 2005-03-22 The United States Of America As Represented By The United States National Aeronautics And Space Administration Method for the production of nanometer scale step height reference specimens
US8617965B1 (en) 2004-02-19 2013-12-31 Partial Assignment to University of Central Florida Apparatus and method of forming high crystalline quality layer
US7618880B1 (en) * 2004-02-19 2009-11-17 Quick Nathaniel R Apparatus and method for transformation of substrate
US7268063B1 (en) 2004-06-01 2007-09-11 University Of Central Florida Process for fabricating semiconductor component
FR2871936B1 (fr) * 2004-06-21 2006-10-06 Commissariat Energie Atomique Procede de metallisation de la surface prealablement passivee d'un materiau semi conducteur et materiau obtenu par ce procede
US7419887B1 (en) 2004-07-26 2008-09-02 Quick Nathaniel R Laser assisted nano deposition
US7951632B1 (en) 2005-01-26 2011-05-31 University Of Central Florida Optical device and method of making
EP1897145A1 (de) * 2005-06-30 2008-03-12 Commissariat A L'energie Atomique Nanostrukturen mit negativem differentiellem widerstand und herstellungsverfahren dafür
FR2887866B1 (fr) * 2005-06-30 2007-08-17 Commissariat Energie Atomique Nanostructures a resistance differentielle negative et procede de fabrication de ces nanostructures
FR2888398B1 (fr) * 2005-07-05 2007-12-21 Commissariat Energie Atomique Couche de silicium tres sensible a l'oxygene et procede d'obtention de cette couche
FR2888399B1 (fr) * 2005-07-05 2008-03-14 Commissariat Energie Atomique Substrat, notamment en carbure de silicium, recouvert par une couche mince de nitrure de silicium stoechiometrique, pour la fabrication de composants electroniques, et procede d'obtention d'une telle couche
US8617669B1 (en) 2006-04-20 2013-12-31 Partial Assignment to University of Central Florida Laser formation of graphene
US7811914B1 (en) 2006-04-20 2010-10-12 Quick Nathaniel R Apparatus and method for increasing thermal conductivity of a substrate
US8067303B1 (en) 2006-09-12 2011-11-29 Partial Assignment University of Central Florida Solid state energy conversion device
US8114693B1 (en) 2007-09-18 2012-02-14 Partial Assignment University of Central Florida Method of fabricating solid state gas dissociating device by laser doping
JP5388136B2 (ja) * 2008-03-10 2014-01-15 国立大学法人東北大学 グラフェンまたはグラファイト薄膜、その製造方法、薄膜構造および電子デバイス
CA2745634A1 (en) * 2008-12-02 2010-06-10 University Of Central Florida Energy conversion device
US9059079B1 (en) 2012-09-26 2015-06-16 Ut-Battelle, Llc Processing of insulators and semiconductors
US9620667B1 (en) 2013-12-10 2017-04-11 AppliCote Associates LLC Thermal doping of materials
US9601641B1 (en) 2013-12-10 2017-03-21 AppliCote Associates, LLC Ultra-high pressure doping of materials

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5145741A (en) * 1989-06-05 1992-09-08 Quick Nathaniel R Converting ceramic materials to electrical conductors and semiconductors
WO1992022922A2 (en) * 1991-06-12 1992-12-23 Case Western Reserve University Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
GB9206086D0 (en) * 1992-03-20 1992-05-06 Philips Electronics Uk Ltd Manufacturing electronic devices comprising,e.g.tfts and mims
US5296258A (en) * 1992-09-30 1994-03-22 Northern Telecom Limited Method of forming silicon carbide
US5391841A (en) * 1992-12-08 1995-02-21 Quick; Nathaniel R. Laser processed coatings on electronic circuit substrates
US5709745A (en) * 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
US5318915A (en) * 1993-01-25 1994-06-07 North Carolina State University At Raleigh Method for forming a p-n junction in silicon carbide
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same

Also Published As

Publication number Publication date
JP2001506806A (ja) 2001-05-22
FR2757183B1 (fr) 1999-02-05
JP4327254B2 (ja) 2009-09-09
DE69720249D1 (de) 2003-04-30
DE69720249T2 (de) 2003-12-11
US6274234B1 (en) 2001-08-14
EP0944916B1 (de) 2003-03-26
DK0944916T3 (da) 2003-07-21
FR2757183A1 (fr) 1998-06-19
WO1998027578A1 (fr) 1998-06-25
EP0944916A1 (de) 1999-09-29

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