ATE239990T1 - Halbleiterlaserdiode mit verteiltem reflektor - Google Patents

Halbleiterlaserdiode mit verteiltem reflektor

Info

Publication number
ATE239990T1
ATE239990T1 AT00958866T AT00958866T ATE239990T1 AT E239990 T1 ATE239990 T1 AT E239990T1 AT 00958866 T AT00958866 T AT 00958866T AT 00958866 T AT00958866 T AT 00958866T AT E239990 T1 ATE239990 T1 AT E239990T1
Authority
AT
Austria
Prior art keywords
laser diode
laser
semiconductor laser
grating
distributed reflector
Prior art date
Application number
AT00958866T
Other languages
English (en)
Inventor
Aeneas Benedict Massara
Laurence John Sargent
Richard Vincent Penty
Ian Hugh White
Original Assignee
Univ Bristol
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Bristol filed Critical Univ Bristol
Application granted granted Critical
Publication of ATE239990T1 publication Critical patent/ATE239990T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Optical Communication System (AREA)
AT00958866T 1999-09-08 2000-09-08 Halbleiterlaserdiode mit verteiltem reflektor ATE239990T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9921445A GB2354110A (en) 1999-09-08 1999-09-08 Ridge waveguide lasers
PCT/GB2000/003483 WO2001018924A1 (en) 1999-09-08 2000-09-08 Semiconductor laser diode with a distributed reflector

Publications (1)

Publication Number Publication Date
ATE239990T1 true ATE239990T1 (de) 2003-05-15

Family

ID=10860715

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00958866T ATE239990T1 (de) 1999-09-08 2000-09-08 Halbleiterlaserdiode mit verteiltem reflektor

Country Status (6)

Country Link
EP (1) EP1214764B1 (de)
AT (1) ATE239990T1 (de)
AU (1) AU7028000A (de)
DE (1) DE60002591T2 (de)
GB (1) GB2354110A (de)
WO (1) WO2001018924A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2385940B (en) 1999-03-05 2003-10-22 Nanovis Llc Aperiodically poled non-linear material
DE60329855D1 (de) * 2002-06-03 2009-12-10 Mears Technologies Inc Fabry-perot-laser mit wellenlängensteuerung
JP2004172506A (ja) * 2002-11-22 2004-06-17 Sony Corp 半導体レーザ素子

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59205787A (ja) * 1983-05-09 1984-11-21 Nec Corp 単一軸モ−ド半導体レ−ザ
JPS6393187A (ja) * 1986-10-08 1988-04-23 Sharp Corp 分布帰還型半導体レ−ザ
EP0495559B1 (de) * 1987-01-21 1994-10-05 AT&T Corp. Hybridlaser für optisches Nachrichtenwesen
JP2749038B2 (ja) * 1987-07-31 1998-05-13 株式会社日立製作所 波長可変半導体レーザ
US4856017A (en) * 1987-12-22 1989-08-08 Ortel Corporation Single frequency high power semiconductor laser
JPH02143581A (ja) * 1988-11-25 1990-06-01 Furukawa Electric Co Ltd:The 半導体レーザ素子
US5119393A (en) * 1989-06-14 1992-06-02 Hitachi, Ltd. Semiconductor laser device capable of controlling wavelength shift
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
FR2734097B1 (fr) * 1995-05-12 1997-06-06 Thomson Csf Laser a semiconducteurs
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
FR2765347B1 (fr) * 1997-06-26 1999-09-24 Alsthom Cge Alcatel Reflecteur de bragg en semi-conducteur et procede de fabrication

Also Published As

Publication number Publication date
AU7028000A (en) 2001-04-10
EP1214764A1 (de) 2002-06-19
DE60002591D1 (de) 2003-06-12
EP1214764B1 (de) 2003-05-07
GB2354110A (en) 2001-03-14
GB9921445D0 (de) 1999-11-10
DE60002591T2 (de) 2004-04-01
WO2001018924A1 (en) 2001-03-15

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Legal Events

Date Code Title Description
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