ATE246392T1 - Lokale abschirmung für speicherzellen - Google Patents

Lokale abschirmung für speicherzellen

Info

Publication number
ATE246392T1
ATE246392T1 AT00932731T AT00932731T ATE246392T1 AT E246392 T1 ATE246392 T1 AT E246392T1 AT 00932731 T AT00932731 T AT 00932731T AT 00932731 T AT00932731 T AT 00932731T AT E246392 T1 ATE246392 T1 AT E246392T1
Authority
AT
Austria
Prior art keywords
local shielding
magnetic
memory cells
bit region
local
Prior art date
Application number
AT00932731T
Other languages
English (en)
Inventor
Theodore Zhu
Jeffrey S Sather
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE246392T1 publication Critical patent/ATE246392T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Thin Magnetic Films (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
AT00932731T 1999-05-25 2000-05-24 Lokale abschirmung für speicherzellen ATE246392T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/318,073 US6872993B1 (en) 1999-05-25 1999-05-25 Thin film memory device having local and external magnetic shielding
PCT/US2000/014206 WO2000072324A1 (en) 1999-05-25 2000-05-24 Local shielding for memory cells

Publications (1)

Publication Number Publication Date
ATE246392T1 true ATE246392T1 (de) 2003-08-15

Family

ID=23236521

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00932731T ATE246392T1 (de) 1999-05-25 2000-05-24 Lokale abschirmung für speicherzellen

Country Status (7)

Country Link
US (2) US6872993B1 (de)
EP (1) EP1183691B1 (de)
KR (1) KR100500051B1 (de)
AT (1) ATE246392T1 (de)
DE (1) DE60004215T2 (de)
TW (1) TW455919B (de)
WO (1) WO2000072324A1 (de)

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ATE406660T1 (de) 2000-06-23 2008-09-15 Nxp Bv Magnetischer speicher
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US6555858B1 (en) * 2000-11-15 2003-04-29 Motorola, Inc. Self-aligned magnetic clad write line and its method of formation
US6611453B2 (en) * 2001-01-24 2003-08-26 Infineon Technologies Ag Self-aligned cross-point MRAM device with aluminum metallization layers
US6413788B1 (en) * 2001-02-28 2002-07-02 Micron Technology, Inc. Keepers for MRAM electrodes
US6475812B2 (en) * 2001-03-09 2002-11-05 Hewlett Packard Company Method for fabricating cladding layer in top conductor
US6653154B2 (en) * 2001-03-15 2003-11-25 Micron Technology, Inc. Method of forming self-aligned, trenchless mangetoresistive random-access memory (MRAM) structure with sidewall containment of MRAM structure
US6504221B1 (en) * 2001-09-25 2003-01-07 Hewlett-Packard Company Magneto-resistive device including soft reference layer having embedded conductors
US6720597B2 (en) * 2001-11-13 2004-04-13 Motorola, Inc. Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layers
TW569442B (en) 2001-12-18 2004-01-01 Toshiba Corp Magnetic memory device having magnetic shield layer, and manufacturing method thereof
US6525957B1 (en) * 2001-12-21 2003-02-25 Motorola, Inc. Magnetic memory cell having magnetic flux wrapping around a bit line and method of manufacturing thereof
US6548849B1 (en) * 2002-01-31 2003-04-15 Sharp Laboratories Of America, Inc. Magnetic yoke structures in MRAM devices to reduce programming power consumption and a method to make the same
US6770491B2 (en) * 2002-08-07 2004-08-03 Micron Technology, Inc. Magnetoresistive memory and method of manufacturing the same
US6914805B2 (en) * 2002-08-21 2005-07-05 Micron Technology, Inc. Method for building a magnetic keeper or flux concentrator used for writing magnetic bits on a MRAM device
JP4404182B2 (ja) 2002-09-25 2010-01-27 Ｔｄｋ株式会社 磁気メモリデバイスおよびその読出方法
US7068537B2 (en) 2002-11-06 2006-06-27 Interuniversitair Microelektronica Centrum (Imec) Magnetic device and method of making the same
EP1418591A3 (de) * 2002-11-06 2005-02-09 Interuniversitair Microelektronica Centrum Vzw Magnetische Vorrichtung
US6940153B2 (en) 2003-02-05 2005-09-06 Hewlett-Packard Development Company, L.P. Magnetic shielding for magnetic random access memory card
US7529987B2 (en) 2003-06-05 2009-05-05 Nxp B.V. Integrity control for data stored in a non-volatile memory
JP2007504455A (ja) * 2003-09-02 2007-03-01 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 磁気感応性材料を含む回路のための能動的遮蔽
US7078239B2 (en) * 2003-09-05 2006-07-18 Micron Technology, Inc. Integrated circuit structure formed by damascene process
KR20070001065A (ko) * 2003-11-24 2007-01-03 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 자기장 센서를 이용한 ｍｒａｍ 칩의 불균일 차폐
US7075807B2 (en) * 2004-08-18 2006-07-11 Infineon Technologies Ag Magnetic memory with static magnetic offset field
US7545662B2 (en) * 2005-03-25 2009-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for magnetic shielding in semiconductor integrated circuit
US8269319B2 (en) * 2006-10-13 2012-09-18 Tessera, Inc. Collective and synergistic MRAM shields
US20080270110A1 (en) * 2007-04-30 2008-10-30 Yurick Steven J Automatic speech recognition with textual content input
US20080270344A1 (en) * 2007-04-30 2008-10-30 Yurick Steven J Rich media content search engine
US7911830B2 (en) 2007-05-17 2011-03-22 Integrated Magnetoelectronics Scalable nonvolatile memory
US8361856B2 (en) 2010-11-01 2013-01-29 Micron Technology, Inc. Memory cells, arrays of memory cells, and methods of forming memory cells
US8329567B2 (en) 2010-11-03 2012-12-11 Micron Technology, Inc. Methods of forming doped regions in semiconductor substrates
US8450175B2 (en) 2011-02-22 2013-05-28 Micron Technology, Inc. Methods of forming a vertical transistor and at least a conductive line electrically coupled therewith
US8569831B2 (en) 2011-05-27 2013-10-29 Micron Technology, Inc. Integrated circuit arrays and semiconductor constructions
US9036391B2 (en) 2012-03-06 2015-05-19 Micron Technology, Inc. Arrays of vertically-oriented transistors, memory arrays including vertically-oriented transistors, and memory cells
US9006060B2 (en) 2012-08-21 2015-04-14 Micron Technology, Inc. N-type field effect transistors, arrays comprising N-type vertically-oriented transistors, methods of forming an N-type field effect transistor, and methods of forming an array comprising vertically-oriented N-type transistors
US9129896B2 (en) 2012-08-21 2015-09-08 Micron Technology, Inc. Arrays comprising vertically-oriented transistors, integrated circuitry comprising a conductive line buried in silicon-comprising semiconductor material, methods of forming a plurality of conductive lines buried in silicon-comprising semiconductor material, and methods of forming an array comprising vertically-oriented transistors
US9478550B2 (en) 2012-08-27 2016-10-25 Micron Technology, Inc. Arrays of vertically-oriented transistors, and memory arrays including vertically-oriented transistors
US8952504B2 (en) 2013-02-08 2015-02-10 Qualcomm Incorporated Small form factor magnetic shield for magnetorestrictive random access memory (MRAM)
US9111853B2 (en) 2013-03-15 2015-08-18 Micron Technology, Inc. Methods of forming doped elements of semiconductor device structures
US9269673B1 (en) * 2014-10-22 2016-02-23 Advanced Semiconductor Engineering, Inc. Semiconductor device packages
US9741923B2 (en) 2015-09-25 2017-08-22 Integrated Magnetoelectronics Corporation SpinRAM
US11257766B1 (en) 2020-08-21 2022-02-22 Micron Technology, Inc. Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems

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Also Published As

Publication number Publication date
EP1183691A1 (de) 2002-03-06
US20060063278A1 (en) 2006-03-23
DE60004215T2 (de) 2004-02-19
KR100500051B1 (ko) 2005-07-18
WO2000072324A1 (en) 2000-11-30
US7166479B2 (en) 2007-01-23
EP1183691B1 (de) 2003-07-30
US6872993B1 (en) 2005-03-29
DE60004215D1 (de) 2003-09-04
KR20020023944A (ko) 2002-03-29
TW455919B (en) 2001-09-21

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties