ATE249090T1 - Strahlengeschützter 6-transistorenspeicher mit wahlfreiem zugriff und speicherbauelement - Google Patents
Strahlengeschützter 6-transistorenspeicher mit wahlfreiem zugriff und speicherbauelementInfo
- Publication number
- ATE249090T1 ATE249090T1 AT99955359T AT99955359T ATE249090T1 AT E249090 T1 ATE249090 T1 AT E249090T1 AT 99955359 T AT99955359 T AT 99955359T AT 99955359 T AT99955359 T AT 99955359T AT E249090 T1 ATE249090 T1 AT E249090T1
- Authority
- AT
- Austria
- Prior art keywords
- pfet
- drain
- gate
- memory
- nfet
- Prior art date
Links
- 230000005855 radiation Effects 0.000 title abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 3
- 230000003068 static effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
- G11C11/4125—Cells incorporating circuit means for protecting against loss of information
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US9094698A | 1998-06-05 | 1998-06-05 | |
| PCT/US1999/012442 WO1999063542A1 (en) | 1998-06-05 | 1999-06-04 | Radiation hardened six transistor random access memory and memory device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE249090T1 true ATE249090T1 (de) | 2003-09-15 |
Family
ID=22225068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT99955359T ATE249090T1 (de) | 1998-06-05 | 1999-06-04 | Strahlengeschützter 6-transistorenspeicher mit wahlfreiem zugriff und speicherbauelement |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6111780A (de) |
| EP (1) | EP1088310B1 (de) |
| JP (1) | JP2002517897A (de) |
| AT (1) | ATE249090T1 (de) |
| AU (1) | AU4331899A (de) |
| DE (1) | DE69911014T2 (de) |
| TW (1) | TW440829B (de) |
| WO (1) | WO1999063542A1 (de) |
Families Citing this family (74)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US7050456B1 (en) | 1998-12-04 | 2006-05-23 | Tekelec | Methods and systems for communicating signaling system 7 (SS7) user part messages among SS7 signaling points (SPs) and internet protocol (IP) nodes using signal transfer points (STPs) |
| US6944184B1 (en) | 1998-12-04 | 2005-09-13 | Tekelec | Methods and systems for providing database node access control functionality in a communications network routing node |
| US7002988B1 (en) * | 1998-12-04 | 2006-02-21 | Tekelec | Methods and systems for communicating SS7 messages over packet-based network using transport adapter layer interface |
| WO2000074065A1 (en) * | 1999-05-28 | 2000-12-07 | Lockheed Martin Corporation | Method and apparatus for hardening a static random access memory cell from single event upsets |
| TW509943B (en) * | 1999-10-06 | 2002-11-11 | Ind Tech Res Inst | Hidden-type refreshed 2P2N pseudo static random access memory and its refreshing method |
| US6278287B1 (en) * | 1999-10-27 | 2001-08-21 | The Boeing Company | Isolated well transistor structure for mitigation of single event upsets |
| US6295224B1 (en) * | 1999-12-30 | 2001-09-25 | Stmicroelectronics, Inc. | Circuit and method of fabricating a memory cell for a static random access memory |
| US7318091B2 (en) | 2000-06-01 | 2008-01-08 | Tekelec | Methods and systems for providing converged network management functionality in a gateway routing node to communicate operating status information associated with a signaling system 7 (SS7) node to a data network node |
| US6327176B1 (en) * | 2000-08-11 | 2001-12-04 | Systems Integration Inc. | Single event upset (SEU) hardened latch circuit |
| US6341083B1 (en) * | 2000-11-13 | 2002-01-22 | International Business Machines Corporation | CMOS SRAM cell with PFET passgate devices |
| TW522546B (en) | 2000-12-06 | 2003-03-01 | Mitsubishi Electric Corp | Semiconductor memory |
| US6549443B1 (en) | 2001-05-16 | 2003-04-15 | Rockwell Collins, Inc. | Single event upset resistant semiconductor circuit element |
| US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
| US20030036236A1 (en) * | 2001-08-15 | 2003-02-20 | Joseph Benedetto | Method for radiation hardening N-channel MOS transistors |
| KR100993517B1 (ko) * | 2002-03-27 | 2010-11-10 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 집적 회로, 집적 회로 구동 회로, 및 관련방법 |
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| US6744661B1 (en) * | 2002-05-15 | 2004-06-01 | Virage Logic Corp. | Radiation-hardened static memory cell using isolation technology |
| AU2003241719A1 (en) * | 2002-06-05 | 2003-12-22 | Matsushita Electric Industrial Co., Ltd. | Non-volatile memory circuit, drive method thereof, semiconductor device using the memory circuit |
| US6728130B1 (en) * | 2002-10-22 | 2004-04-27 | Broadcom Corporation | Very dense SRAM circuits |
| US6834003B2 (en) * | 2002-11-25 | 2004-12-21 | International Business Machines Corporation | Content addressable memory with PFET passgate SRAM cells |
| US7486541B2 (en) * | 2003-06-13 | 2009-02-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive cell structure for reducing soft error rate |
| US6992916B2 (en) * | 2003-06-13 | 2006-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | SRAM cell design with high resistor CMOS gate structure for soft error rate improvement |
| US7301206B2 (en) * | 2003-08-01 | 2007-11-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors |
| US7054217B2 (en) * | 2003-09-12 | 2006-05-30 | Sanyo Electric Co. Ltd. | Semiconductor memory device |
| JP2005151170A (ja) * | 2003-11-14 | 2005-06-09 | Renesas Technology Corp | 半導体集積回路 |
| US7023235B2 (en) * | 2003-12-12 | 2006-04-04 | Universities Research Association, Inc. | Redundant single event upset supression system |
| US7193885B2 (en) * | 2004-01-05 | 2007-03-20 | Actel Corporation | Radiation tolerant SRAM bit |
| US7110281B1 (en) * | 2004-06-08 | 2006-09-19 | Xilinx, Inc. | Memory cells utilizing metal-to-metal capacitors to reduce susceptibility to single event upsets |
| US7064574B1 (en) | 2004-06-08 | 2006-06-20 | Xilinx, Inc. | PLD memory cells utilizing metal-to-metal capacitors to selectively reduce susceptibility to single event upsets |
| US7319253B2 (en) * | 2004-07-01 | 2008-01-15 | Altera Corporation | Integrated circuit structures for increasing resistance to single event upset |
| ATE490602T1 (de) * | 2004-07-06 | 2010-12-15 | Kenet Inc | Spannungs-direktzugriffsspeicher (vram) |
| US7532647B2 (en) | 2004-07-14 | 2009-05-12 | Tekelec | Methods and systems for auto-correlating message transfer part (MTP) priority and internet protocol (IP) type of service in converged networks |
| US9542577B2 (en) | 2005-12-09 | 2017-01-10 | Tego, Inc. | Information RFID tagging facilities |
| US8988223B2 (en) | 2005-12-09 | 2015-03-24 | Tego Inc. | RFID drive management facility |
| US8947233B2 (en) * | 2005-12-09 | 2015-02-03 | Tego Inc. | Methods and systems of a multiple radio frequency network node RFID tag |
| US9430732B2 (en) | 2014-05-08 | 2016-08-30 | Tego, Inc. | Three-dimension RFID tag with opening through structure |
| US9361568B2 (en) | 2005-12-09 | 2016-06-07 | Tego, Inc. | Radio frequency identification tag with hardened memory system |
| US9418263B2 (en) | 2005-12-09 | 2016-08-16 | Tego, Inc. | Operating systems for an RFID tag |
| US9117128B2 (en) | 2005-12-09 | 2015-08-25 | Tego, Inc. | External access to memory on an RFID tag |
| US7495949B2 (en) * | 2006-02-10 | 2009-02-24 | International Business Machines Corporation | Asymmetrical random access memory cell, memory comprising asymmetrical memory cells and method to operate such a memory |
| US7388772B1 (en) * | 2006-03-20 | 2008-06-17 | Altera Corporation | Latch circuit |
| US7468904B2 (en) | 2007-02-23 | 2008-12-23 | Bae Systems Information And Electronic Systems Integration Inc. | Apparatus for hardening a static random access memory cell from single event upsets |
| US8189367B1 (en) * | 2007-02-23 | 2012-05-29 | Bae Systems Information And Electronic Systems Integration Inc. | Single event upset hardened static random access memory cell |
| US7876602B2 (en) | 2007-06-18 | 2011-01-25 | Bae Systems Information And Electronic Systems Integration Inc. | Single-event upset immune static random access memory cell circuit, system, and method |
| US20090001481A1 (en) * | 2007-06-26 | 2009-01-01 | Ethan Harrison Cannon | Digital circuits having additional capacitors for additional stability |
| US7719887B2 (en) * | 2007-08-27 | 2010-05-18 | International Business Machines Corporation | CMOS storage devices configurable in high performance mode or radiation tolerant mode |
| US7684232B1 (en) | 2007-09-11 | 2010-03-23 | Xilinx, Inc. | Memory cell for storing a data bit value despite atomic radiation |
| US7804320B2 (en) * | 2008-06-13 | 2010-09-28 | University Of South Florida | Methodology and apparatus for reduction of soft errors in logic circuits |
| JP5010700B2 (ja) * | 2010-03-05 | 2012-08-29 | 株式会社東芝 | 半導体集積回路 |
| US8767072B1 (en) | 2010-03-26 | 2014-07-01 | Lockheed Martin Corporation | Geoposition determination by starlight refraction measurement |
| US8837782B1 (en) * | 2010-06-22 | 2014-09-16 | Lockheed Martin Corporation | Geoposition determination using satellite ephemerides |
| US8472737B2 (en) * | 2010-09-30 | 2013-06-25 | The Charles Stark Draper Laboratory, Inc. | Attitude estimation in compressed domain |
| US8472736B2 (en) * | 2010-09-30 | 2013-06-25 | The Charles Stark Draper Laboratory, Inc. | Attitude estimation by reducing noise with dragback |
| US8472735B2 (en) * | 2010-09-30 | 2013-06-25 | The Charles Stark Draper Laboratory, Inc. | Attitude estimation with compressive sampling of starfield data |
| US10629250B2 (en) * | 2010-11-16 | 2020-04-21 | Texas Instruments Incorporated | SRAM cell having an n-well bias |
| US9064974B2 (en) | 2011-05-16 | 2015-06-23 | International Business Machines Corporation | Barrier trench structure and methods of manufacture |
| US8451062B2 (en) | 2011-07-25 | 2013-05-28 | Honeywell International Inc. | Radiation hardened differential amplifier |
| US9767890B2 (en) * | 2011-12-31 | 2017-09-19 | Intel Corporation | Operation aware auto-feedback SRAM |
| CN103021445B (zh) * | 2012-11-28 | 2015-10-28 | 西安交通大学 | 一种抗单粒子翻转的敏感放大器 |
| US9146882B2 (en) * | 2013-02-04 | 2015-09-29 | International Business Machines Corporation | Securing the contents of a memory device |
| US9208853B2 (en) * | 2013-03-15 | 2015-12-08 | Intel Corporation | Dual-port static random access memory (SRAM) |
| US9281056B2 (en) | 2014-06-18 | 2016-03-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Static random access memory and method of using the same |
| US9953193B2 (en) | 2014-09-30 | 2018-04-24 | Tego, Inc. | Operating systems for an RFID tag |
| US9437298B1 (en) * | 2015-03-25 | 2016-09-06 | Intel Corporation | Self-storing and self-restoring non-volatile static random access memory |
| US9336860B1 (en) | 2015-05-20 | 2016-05-10 | International Business Machines Corporation | Complementary bipolar SRAM |
| CN106847325A (zh) * | 2016-12-26 | 2017-06-13 | 中北大学 | 抗单粒子翻转的存储单元 |
| CN106847324A (zh) * | 2016-12-26 | 2017-06-13 | 齐齐哈尔大学 | 抗辐射存储单元 |
| US10176857B1 (en) | 2017-06-22 | 2019-01-08 | Globalfoundries Inc. | Read and write scheme for high density SRAM |
| US10700046B2 (en) | 2018-08-07 | 2020-06-30 | Bae Systems Information And Electronic Systems Integration Inc. | Multi-chip hybrid system-in-package for providing interoperability and other enhanced features to high complexity integrated circuits |
| US10854586B1 (en) | 2019-05-24 | 2020-12-01 | Bae Systems Information And Electronics Systems Integration Inc. | Multi-chip module hybrid integrated circuit with multiple power zones that provide cold spare support |
| US10990471B2 (en) | 2019-05-29 | 2021-04-27 | Bae Systems Information And Electronic Systems Integration Inc. | Apparatus and method for reducing radiation induced multiple-bit memory soft errors |
| CN111445934B (zh) * | 2020-03-26 | 2023-08-15 | 上海华力集成电路制造有限公司 | 一种用于内存计算的电路结构 |
| US11342915B1 (en) | 2021-02-11 | 2022-05-24 | Bae Systems Information And Electronic Systems Integration Inc. | Cold spare tolerant radiation hardened generic level shifter circuit |
| US12463461B2 (en) * | 2024-01-11 | 2025-11-04 | King Fahd University Of Petroleum And Minerals | RF-DC converter for energy harvesting using CMOS N-well process |
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-
1999
- 1999-06-04 AT AT99955359T patent/ATE249090T1/de not_active IP Right Cessation
- 1999-06-04 WO PCT/US1999/012442 patent/WO1999063542A1/en not_active Ceased
- 1999-06-04 JP JP2000552677A patent/JP2002517897A/ja active Pending
- 1999-06-04 US US09/325,645 patent/US6111780A/en not_active Expired - Lifetime
- 1999-06-04 EP EP99955359A patent/EP1088310B1/de not_active Expired - Lifetime
- 1999-06-04 DE DE69911014T patent/DE69911014T2/de not_active Expired - Fee Related
- 1999-06-04 AU AU43318/99A patent/AU4331899A/en not_active Abandoned
- 1999-08-02 TW TW088109304A patent/TW440829B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| AU4331899A (en) | 1999-12-20 |
| WO1999063542A8 (en) | 2000-03-23 |
| EP1088310B1 (de) | 2003-09-03 |
| JP2002517897A (ja) | 2002-06-18 |
| DE69911014T2 (de) | 2004-07-08 |
| EP1088310A2 (de) | 2001-04-04 |
| US6111780A (en) | 2000-08-29 |
| WO1999063542A1 (en) | 1999-12-09 |
| DE69911014D1 (de) | 2003-10-09 |
| TW440829B (en) | 2001-06-16 |
| WO1999063542B1 (en) | 2000-01-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |