ATE256875T1 - Sich verjüngender wellenleiter (taper) mit lateralen strahlbegrenzenden rippenwellenleitern - Google Patents

Sich verjüngender wellenleiter (taper) mit lateralen strahlbegrenzenden rippenwellenleitern

Info

Publication number
ATE256875T1
ATE256875T1 AT02076214T AT02076214T ATE256875T1 AT E256875 T1 ATE256875 T1 AT E256875T1 AT 02076214 T AT02076214 T AT 02076214T AT 02076214 T AT02076214 T AT 02076214T AT E256875 T1 ATE256875 T1 AT E256875T1
Authority
AT
Austria
Prior art keywords
taper
waveguide
rib
transition section
mode transition
Prior art date
Application number
AT02076214T
Other languages
English (en)
Inventor
Mesel Kurt De
Marko Galarza
Candido Aramburo
Roel Baets
Original Assignee
Imec Inter Uni Micro Electr
Univ Navarra Publica
Univ Gent
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr, Univ Navarra Publica, Univ Gent filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE256875T1 publication Critical patent/ATE256875T1/de

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • G02B6/1228—Tapered waveguides, e.g. integrated spot-size transformers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083—Constructional arrangements
    • G02B2006/12097—Ridge, rib or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optical Integrated Circuits (AREA)
  • Waveguide Aerials (AREA)
AT02076214T 2001-03-29 2002-03-28 Sich verjüngender wellenleiter (taper) mit lateralen strahlbegrenzenden rippenwellenleitern ATE256875T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US27995301P 2001-03-29 2001-03-29

Publications (1)

Publication Number Publication Date
ATE256875T1 true ATE256875T1 (de) 2004-01-15

Family

ID=23071042

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02076214T ATE256875T1 (de) 2001-03-29 2002-03-28 Sich verjüngender wellenleiter (taper) mit lateralen strahlbegrenzenden rippenwellenleitern

Country Status (4)

Country Link
US (1) US6681069B2 (de)
EP (1) EP1245971B1 (de)
AT (1) ATE256875T1 (de)
DE (1) DE60200132T2 (de)

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US6826220B2 (en) * 1999-12-27 2004-11-30 Corning O.T.I. S.R.L. Semiconductor laser element having a diverging region
JP3766953B2 (ja) * 2000-09-13 2006-04-19 日本電信電話株式会社 光回路
GB2388917A (en) * 2002-05-25 2003-11-26 Bookham Technology Plc Semiconductor optical waveguide with a varying taper
US6989284B2 (en) * 2002-05-31 2006-01-24 Intel Corporation Fabrication of a waveguide taper through ion implantation
US6956983B2 (en) 2002-05-31 2005-10-18 Intel Corporation Epitaxial growth for waveguide tapering
US20040120649A1 (en) * 2002-12-20 2004-06-24 Motorola, Inc. Optical coupling interface for optical waveguide and optical fiber
CA2534970A1 (en) * 2003-08-04 2005-02-17 Pirelli & C. S.P.A. Integrated optical waveguide structure with low coupling losses to an external optical field
WO2005017588A1 (en) 2003-08-19 2005-02-24 Ignis Technologies As Integrated optics spot size converter and manufacturing method
WO2006001452A1 (ja) * 2004-06-28 2006-01-05 Omron Corporation 光導波路、光導波路モジュール、光伝送装置、光導波路の製造方法
US7088890B2 (en) * 2004-11-30 2006-08-08 Intel Corporation Dual “cheese wedge” silicon taper waveguide
DE102009019996B4 (de) 2009-05-05 2011-09-15 Nanoplus Gmbh Nanosystems And Technologies DFB Laserdiode mit lateraler Kopplung für große Ausgangsleistungen
US9268089B2 (en) * 2011-04-21 2016-02-23 Octrolix Bv Layer having a non-linear taper and method of fabrication
US8995805B2 (en) 2012-04-20 2015-03-31 Micron Technology, Inc. Method and apparatus providing a coupled photonic structure
CN105474481B (zh) * 2013-09-16 2019-11-05 英特尔公司 包括光波导的混合式光学装置
US9231131B2 (en) 2014-01-07 2016-01-05 International Business Machines Corporation Integrated photodetector waveguide structure with alignment tolerance
CN106030939B (zh) * 2014-03-11 2019-10-11 古河电气工业株式会社 半导体激光器元件
US20160282558A1 (en) * 2015-03-27 2016-09-29 Intel Corporation Optical higher-order mode frustration in a rib waveguide
TWI584008B (zh) 2015-07-23 2017-05-21 國立中山大學 光波導結構及其製造方法
US9726821B2 (en) * 2015-12-01 2017-08-08 Ranovus Inc. Adiabatic elliptical optical coupler device
JP2022180811A (ja) * 2021-05-25 2022-12-07 ウシオ電機株式会社 半導体発光素子および半導体発光素子の製造方法
CN113640913B (zh) * 2021-06-22 2023-08-11 北京工业大学 一种与单模光纤直接耦合的lnoi基模斑转换器
US11747559B2 (en) * 2021-08-25 2023-09-05 Globalfoundries U.S. Inc. Photonic integrated circuit structure with supplemental waveguide-enhanced optical coupling between primary waveguides
US11747560B2 (en) 2021-08-25 2023-09-05 Globalfoundries U.S. Inc. Photonic integrated circuit structure with a tapered end portion of one waveguide adjacent to a v-shaped end portion of a different waveguide

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4715672A (en) * 1986-01-06 1987-12-29 American Telephone And Telegraph Company Optical waveguide utilizing an antiresonant layered structure
FR2684823B1 (fr) * 1991-12-04 1994-01-21 Alcatel Alsthom Cie Gle Electric Composant optique semi-conducteur a mode de sortie elargi et son procede de fabrication.
US5349602A (en) * 1993-03-15 1994-09-20 Sdl, Inc. Broad-area MOPA device with leaky waveguide beam expander
GB2317023B (en) * 1997-02-07 1998-07-29 Bookham Technology Ltd A tapered rib waveguide
US6438279B1 (en) * 1999-01-07 2002-08-20 Cornell Research Foundation, Inc. Unitary microcapiliary and waveguide structure and method of fabrication
US6363188B1 (en) * 1999-10-22 2002-03-26 Princeton Lightwave, Inc. Mode expander with co-directional grating
US6600864B2 (en) * 2000-12-20 2003-07-29 Intel Corporation Method and apparatus for switching an optical beam using an optical rib waveguide
US7082235B2 (en) * 2001-09-10 2006-07-25 California Institute Of Technology Structure and method for coupling light between dissimilar waveguides

Also Published As

Publication number Publication date
EP1245971A2 (de) 2002-10-02
EP1245971B1 (de) 2003-12-17
US6681069B2 (en) 2004-01-20
US20030007766A1 (en) 2003-01-09
DE60200132D1 (de) 2004-01-29
EP1245971A3 (de) 2002-11-20
DE60200132T2 (de) 2004-08-26

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